2019
DOI: 10.1016/j.rinp.2019.102225
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DFT-based study on H2S and SOF2 adsorption on Si-MoS2 monolayer

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Cited by 49 publications
(24 citation statements)
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“…The separation distance corresponds to the width between the two As shown in Table 2, we calculated E f orm for the four Ga doping models. It was evident that the most favorable doping position had the lowest formation energy, which means that the reaction occurred most easily [42,43]. The T Mo site had the smallest formation energy of −1.75 eV.…”
Section: Geometric Structure Of Gas Molecules Mos2 and Ga-mos2 Monolayermentioning
confidence: 98%
“…The separation distance corresponds to the width between the two As shown in Table 2, we calculated E f orm for the four Ga doping models. It was evident that the most favorable doping position had the lowest formation energy, which means that the reaction occurred most easily [42,43]. The T Mo site had the smallest formation energy of −1.75 eV.…”
Section: Geometric Structure Of Gas Molecules Mos2 and Ga-mos2 Monolayermentioning
confidence: 98%
“…However, the position of the convolution core far away from the center was almost zero (the value of the far end of the convolution core caused by the change of unit displacement and unit pressure is almost zero). This means that the inversion of equations was impossible, as some unknown coefficients in some equations are close to 0, which greatly affects solution accuracy [18].…”
Section: Inversion Methods Of Reservoir Average Pore Pressure Changesmentioning
confidence: 99%
“…For detection of SF 6 decomposed gases, impurity‐doped MoS 2 was widely proposed and investigated in order to explore its sensing application upon typical gases. Gui et al [133, 134] using DFT method reported the adsorption performances of Si‐ and Co‐doped MoS 2 monolayer upon H 2 S, SOF 2 and SO 2 F 2 . Chen et al [135] reported the Pt‐ and Au‐doped MoS 2 monolayer for sensing SO 2 , SOF 2 and SO 2 F 2 as well.…”
Section: Application Of Nanomaterials‐based Gas Sensorsmentioning
confidence: 99%