Di-interstitial defect in silicon revisited

Londos, C. A.; Antonaras, G.; Chroneos, Alexander

doi:10.1063/1.4831963

Cited by 5 publications

(3 citation statements)

References 47 publications

(37 reference statements)

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“…It should be mentioned, however, that the assignment is tentative. Further, the defect, which gives rise to the 533 cm −1 line, anneals out in the temperature range 170–200 °C , and this result is not consistent with the predicted high mobility of I 2 .…”

Section: Introductionsupporting

confidence: 57%

“… are metastable and have a magnetic field tensor at variance with that of the Si‐P6 ESR signal. Londos et al have recently assigned an absorption band at 533 cm −1 , which they have observed in the infrared absorption spectra of the neutron‐irradiated Si, to a local vibrational mode due to the I 2 defect. It should be mentioned, however, that the assignment is tentative.…”

Section: Introductionmentioning

confidence: 99%

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The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms

Gusakov

Ластовский

Мурин

et al. 2017

Physica Status Solidi (a)

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.New experimental and theoretical results on the silicon diinterstitial (I 2 ) and its interactions with oxygen and carbon impurity atoms in Si crystals are reported. Electronic structure calculations indicate that I 2 has an acceptor and a donor level in the gap, which are close to the conduction and the valence band edges, respectively. Experimental results, which support the theoretically predicted high mobility of I 2 , are discussed. It is argued that mobile I 2 can be trapped by oxygen and carbon impurities. The I 2 O center has a donor level at E v þ0.09 eV. Two absorption bands at 936 and 929 cm À1 are assigned to the local vibrational modes of the I 2 O defect in the neutral and positively charged states, respectively. The binding energy of I 2 O relative to the separated I 2 and O i species is 0.22 eV. The disappearance of the I 2 O complex upon thermal annealing occurs in the temperature range 50-100 8C and is accompanied by the introduction of another defect, which gives rise to two hole emission signals from energy levels at E v þ0.54 and E v þ0.45 eV. It is argued that these levels are related to a complex consisting of interstitial carbon and interstitial silicon atoms (C i I). The stable configurations of the C i I pair have been found.

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Section: Introductionsupporting

confidence: 57%

Section: Introductionmentioning

confidence: 99%

The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms

Gusakov

Ластовский

Мурин

et al. 2017

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…Very recently, Londos et al (2013) have studied CZ-Si after fast neutron irradiation, and have in particular focused on the 533 cm À1 band which in many respects resemble the P6 defect. The band is observed to begin to decay at $170°C with an activation energy of 0.88 AE 0.03 eV.…”

Section: The Di-interstitialmentioning

confidence: 99%