Diagnosis of trapping phenomena in GaN MESFETs

Meneghesso, G.; Chini, Alessandro; Zanoni, Enrico; Manfredi, M.; Pavesi, M.; Boudart, B.; Gaquière, C.

doi:10.1109/iedm.2000.904338

Cited by 23 publications

(39 citation statements)

References 10 publications

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“…The photoionization energies of the traps are between 1.8 and 2.81 eV, suggesting that the 34 For bulk GaN, using photoionization spectroscopy, Klein et al 38 found trap levels of 1.8 and 2.85 eV were responsible for hot-electron-induced current collapse in GaN metal-semiconductor field-effect transistors (GaN MESFETs). Using the same method, Meneghesso et al 39 came to the same conclusion as Klein et al, but the trap levels were found to be 1.75, 2.32, and 2.67 eV. For AlGaN/GaN HFETs, diverse results have been reported concerning the location of traps.…”

Section: Investigation Of Trap Levels Using Monochromatic Irradiationmentioning

confidence: 49%

“…Since we did observe these traps, it is very possible that thermal equilibrium was not achieved before applying the on-stress. In fact, to keep the same initial condition, we always illuminated the devices with microscope incandescent light for 3 min before the on-stress measurement, as Binari et al, 35 Klein et al, 27,38,40 and Meneghesso et al 39 have done. This process will empty all or most of the traps.…”

Section: E Trapping Mechanism Of Non-localized Hot Electronsmentioning

confidence: 99%

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Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Hu¹,

Hashizume²

2012

Journal of Applied Physics

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Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors Appl. Phys. Lett. 100, 223504 (2012) Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer Appl. Phys. Lett. 100, 223502 (2012) Charge transport and trap characterization in individual GaSb nanowires J. Appl. Phys. 111, 104515 (2012) The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors Appl. Phys. Lett. 100, 222901 (2012) Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor J. Appl. Phys. 111, 104513 (2012) Additional information on J. Appl. Phys. For AlGaN/GaN heterojunction field-effect transistors, on-state-bias-stress (on-stress)-induced trapping effects were observed across the entire drain access region, not only at the gate edge. However, during the application of on-stress, the highest electric field was only localized at the drain side of the gate edge. Using the location of the highest electric field as a reference, the trapping effects at the gate edge and at the more distant access region were referred to as localized and non-localized trapping effect, respectively. Using two-dimensional-electron-gas sensing-bar (2DEG-sensing-bar) and dual-gate structures, the non-localized trapping effects were investigated and the trap density was measured to be $1.3 Â 10 12 cm À2 . The effect of passivation was also discussed. It was found that both surface leakage currents and hot electrons are responsible for the non-localized trapping effects with hot electrons having the dominant effect. Since hot electrons are generated from the 2DEG channel, it is highly likely that the involved traps are mainly in the GaN buffer layer. Using monochromatic irradiation (1.24-2.81 eV), the trap levels responsible for the non-localized trapping effects were found to be located at 0.6-1.6 eV from the valence band of GaN. Both trap-assisted impact ionization and direct channel electron injection are proposed as the possible mechanisms of the hot-electron-related non-localized trapping effect. Finally, using the 2DEG-sensing-bar structure, we directly confirmed that blocking gate injected electrons is an important mechanism of Al 2 O 3 passivation. V C 2012 American Institute of Physics.

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Section: Investigation Of Trap Levels Using Monochromatic Irradiationmentioning

confidence: 49%

Section: E Trapping Mechanism Of Non-localized Hot Electronsmentioning

confidence: 99%

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Hu¹,

Hashizume²

2012

Journal of Applied Physics

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“…They suggested the presence (but not the location) of electron traps. Meneghesso et al [43] studied current collapse in GaN MESFETs and found a correlation between the decrease in drain current and a shift in threshold voltage. Using phototransient measurements, they attribute this collapse to trapping under the gate and in the gate-drain access region.…”

Section: B Buffer Trapping-current Collapsementioning

confidence: 99%

Trapping effects in GaN and SiC microwave FETs

2002

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“…These results have been recently verified independently by other workers. 9,10 The two traps, which are responsible for current collapse in the GaN MESFET, were found to be located in the high resistivity ͑HR͒ GaN buffer layer. Photoionization spectroscopy measurements of current collapse in AlGaN/GaN high electron mobility transistors ͑HEMTs͒ revealed similar spectra, 11 indicating that the same HR-GaN traps cause collapse in these devices as well.…”

Section: Introductionmentioning

confidence: 99%

Photoionization spectroscopy in AlGaN/GaN high electron mobility transistors

Klein

2002

Journal of Applied Physics

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A model is developed to describe the light-induced restoration of the drain current from current collapse in AlGaN/GaN high electron mobility transistors. The model assumes that the collapse results from a transfer at large drain bias of hot carriers from the gate-drain region of the two-dimensional electron gas to deep traps in the high-resistivity GaN layer. Application of the model provides a means of determining the photoionization cross sections and the areal densities of the responsible traps. Where multiple trapping species are involved, it is shown that photoinduced transitions between trapping sites can significantly alter the response of the drain current to light illumination, and must therefore be taken into account.

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Diagnosis of trapping phenomena in GaN MESFETs

Cited by 23 publications

References 10 publications

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Trapping effects in GaN and SiC microwave FETs

Photoionization spectroscopy in AlGaN/GaN high electron mobility transistors

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