2002
DOI: 10.1063/1.1510564
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Photoionization spectroscopy in AlGaN/GaN high electron mobility transistors

Abstract: A model is developed to describe the light-induced restoration of the drain current from current collapse in AlGaN/GaN high electron mobility transistors. The model assumes that the collapse results from a transfer at large drain bias of hot carriers from the gate-drain region of the two-dimensional electron gas to deep traps in the high-resistivity GaN layer. Application of the model provides a means of determining the photoionization cross sections and the areal densities of the responsible traps. Where mult… Show more

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Cited by 28 publications
(19 citation statements)
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“…Since the conducting channel in a HEMT device is a 2DEG, this approach must be altered slightly in order to model the effect of hot carrier injection on the device output characteristics. The approach taken here follows that of [8].…”
Section: Analytical Modelmentioning
confidence: 99%
“…Since the conducting channel in a HEMT device is a 2DEG, this approach must be altered slightly in order to model the effect of hot carrier injection on the device output characteristics. The approach taken here follows that of [8].…”
Section: Analytical Modelmentioning
confidence: 99%
“…3 Photoionization spectroscopy Photoionization spectroscopy is a technique which allows to investigate the traps responsible for the current collapse process [5]. By illumination with monochromatic subband gap light trapped carriers are released and so the collapsed drain current restores partially due to optical excitation.…”
Section: Devicesmentioning
confidence: 99%
“…Additionally, novel device structures with gate field plates have also been reported to be effective in decreasing the current collapses by modifying the electric field at the gate edges [3]. Nevertheless, the current collapses have not yet been completely eliminated, and there is a strong need to investigate deep-level defects in the bulk region of AlGaN/GaN heterostructures from the viewpoint of 2DEG carrier trapping [4][5][6][7][8].…”
Section: Introductionmentioning
confidence: 98%