Diagnostics of Radiative Processes in Semiconductors, Excited by Ultrashort High-Voltage Pulses

A Complex for Diagnostics of Laser Radiation of Semiconductor Targets Excited by a High-Frequency-Modulated Electron Beam

“…Significant successes in the development of highpower subnanosecond sources of electromagnetic fields and dense electron flows [3][4][5] determined the new possibilities in the formation of picosecond pulses with required parameters and, consequently, creation of new trends in studies of the physical processes in highly excited semiconductors [6,7]. New test benches equipped with broadband instrumentation were developed to excite and diagnose the emission of STs [7][8][9][10]. The following most important results were obtained at these benches: (i) a record peak radiation intensity of 3 × 10 7 W/cm 2 and a peak power of 10 MW were achieved for electron-beam-excited semiconductor lasers in the picosecond range on a СdS target in the green spectral region (λ = 522 nm);…”