Diamagnetic SdH effect in crossed and parallel current/magnetic field directions in Si-δ-doped GaAs

Sn delta-doping in GaAs

“…The results for sample N7 will be discussed later in this section. The oscillatory behaviour of the magnetoresistance for a magnetic field parallel to the δ-layer, as shown in figures 5 and 6 for samples N2 and N7, respectively, allows one to determine the number of occupied subbands [9,10]. This effect, which is sometimes termed the diamagnetic Shubnikov-de Haas effect, may serve as an useful tool to investigate two-dimensional multiple subband systems.…”

“…When comparing the DOS and the oscillatory magnetoresistance a clear correspondence between the sharp discontinuities in the DOS and the minima in the first derivative versus magnetic field of the magnetoresistance ∂ρ/∂B are observed (see figure 5). As in [9,10,27] we take the minimum values of ∂ρ/∂B as the experimental depopulation fields (B ). This is based on the analogy between minima in ∂ρ/∂B and maxima in ∂ρ/∂n, where n is the electron density.…”

“…5 and 6 for samples N2 and N7, respectively, allows one to determine the number of occupied subbands [9,10]. This effect, which is sometimes termed the diamagnetic Shubnikov-de Haas effect, may serve as an useful tool to investigate twodimensional multiple subband systems.…”

“…Like in Ref. [9,10,27] we take the minimum values of B ∂ ∂ / ρ as the experimental depopulation fields (B || ). This is based on the analogy between minima in…”

“…Therefore, parts of the experiments were carried out in pulsed fields up to 40 T generated by the High Magnetic Field Facility of the University of Amsterdam. In addition, the diamagnetic Shubnikov-de Haas effect was measured in order to determine the number of subbands [9,10]. The band structure was calculated self consistently and compared to the experimental data.…”