Recent progress in δ-doping of III–V semiconductors grown by metal organic vapour phase epitaxy

Li, G.; Jagadish, Chennupati

doi:10.1016/s0038-1101(97)00063-4

Cited by 20 publications

(7 citation statements)

References 156 publications

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“…The technological process is widely used, for example, for refinement of parameters of Schottky diodes, 13,14 heterobipolar transistors, 15 and is intensively elaborated (see, for example Refs. [11][12][13][14][15][16][17][18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Redistribution of Dopant During Overgrowth of a Delta-Layer

Pankratov

2009

NANO

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In this paper, we analyze redistribution of dopant in δ-doped are during overgrowth of the layer. New explanation of asymmetrization of δ-dopant distribution is presented. The explanation was based on model with some inhomogeneous parameters. The inhomogeneities of parameters are native effects of the considered technological process and inhomogeneity of the doped heterostructure. We calculated spatial distribution of Mn concentration in δ-doped area in heterostructure GaAs/InGaAs/GaAs for overlayer GaAs and estimated spreading of the δ-layer as a function of temperature of overgrowth and depth of the overlayer.Keywords: Delta-doping; modeling of dopant redistribution; alternative approach for modeling; decreasing of degradation of delta-layer. 239NANO 2009.04:239-252. Downloaded from www.worldscientific.com by NANYANG TECHNOLOGICAL UNIVERSITY on 08/21/15. For personal use only. 240 E. L. Pankratov NANO 2009.04:239-252. Downloaded from www.worldscientific.com by NANYANG TECHNOLOGICAL UNIVERSITY on 08/21/15. For personal use only. Redistribution of Dopant During Overgrowth of a Delta-Layer 241

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Section: Introductionmentioning

confidence: 99%

Redistribution of Dopant During Overgrowth of a Delta-Layer

Pankratov

2009

NANO

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“…δ-doping in III-V compound semiconductors is now widely used in semiconductor basic research and device applications. The δ-doping spatially confines the dopants to ≈ one atomic layer during epitaxial growth [1,2]. The extremely sharp dopant profiles are produced by the interruption of the epitaxial crystal growth, deposition of dopant atoms on the semiconductor surface and by resumption of the semiconductor growth.…”

Section: Introductionmentioning

confidence: 99%

Isolation of p-type carbon δ-doped layers in GaAs by ion bombardment

Boudinov

Pesenti

Данилов

et al. 2006

J. Phys. D: Appl. Phys.

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The evolution of the sheet resistance (R s) in δ-doped layers in GaAs during He ion irradiation was investigated. The R s increases with the dose accumulation in a similar way that occurs in layers with much wider dopant profiles, produced either by ion implantation or epi-growth. The R s becomes higher than 10 9 /sq after the so-called threshold dose (D th) is accumulated. The values of D th closely correlate with the ratio of the estimated number of replacement collisions at the depth of the δ-doped layer and the original sheet hole concentration. The maximum thermal stability of the isolation, i.e. the persistence of R s at values above 10 9 /sq after a subsequent thermal annealing is of about 550-600 • C.

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“…In particular, high-frequency FETs using GaN/AlGaN heterostructures have been realized using uniformly Si doped layers. In III-V compound semiconductors such as GaAs, FETs with characteristics superior to those of conventionally doped transistors have been fabricated using the delta-doping technique [6], which can achieve very narrow doping distribution along the epitaxial growth direction and up to now has been studied in a variety of materials and devices [7][8][9]. It was recently demonstrated that the inclusion of delta doping could improve laser stability in the face of temperature variations, in comparison with conventional quantum well lasers [10].…”

Section: Introductionmentioning

confidence: 99%

Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Kim

Yang

Choi

et al. 1999

MRS Internet j. nitride semicond. res.

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Si delta-doping in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040 . Si delta-doping concentration increases and then decreases with an increase in delta-doping time. This indicates that delta-doping concentration is limited by the desorption process owing to much higher thermal decomposition efficiency of silane at high growth temperatures of GaN. In addition, it was observed that the use of a post-purge step in the ammonia ambient reduces Si delta-doping concentration. From capacitance-voltage measurement, a sharp carrier concentration profile with a full-width at half maximum of 4

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Recent progress in δ-doping of III–V semiconductors grown by metal organic vapour phase epitaxy

Cited by 20 publications

References 156 publications

Redistribution of Dopant During Overgrowth of a Delta-Layer

Redistribution of Dopant During Overgrowth of a Delta-Layer

Isolation of p-type carbon δ-doped layers in GaAs by ion bombardment

Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

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