Diameter Dependence of Sub-Terahertz AC Response of Metallic Carbon Nanotubes with a Single Atomic Vacancy

Anomalous satellite inductive peaks in alternating current response of defective carbon nanotubes

“…The susceptance B determines the sign of a phase difference h IÀV between a current and a bias voltage. We focus our attention on the low-frequency admittance as previous studies 4,[7][8][9][10][11][12][13][14] …”

“…1 is not the most stable, [31][32][33][34] this defect is useful for clarifying the effect of defect on physical properties. [13][14][15][16][17][18] We can see two conductance dips: a broad dip around e F ¼ À0.25 eV and a sharp dip around e F ¼ 0.05 eV. 18,35,36 These dips are attributed to the electron scattering by the vacancy state ( Fig.…”

“…The latter cannot be obtained from the simple nearest-neighbor p-orbital tight-binding calculation. [13][14][15][16][17][18] The asymmetric feature of conductance dip at the dangling-bond state is due to the Fano resonance. 37 Next, let us examine the emittance behavior ( Fig.…”

“…7,8 The correlation between low-frequency admittance and DC conductance is well-known in other systems. [9][10][11][12] Very recently, based on nonequilibrium Green's function (NEGF) method and tight-binding approximation, we examined the influence of a single atomic vacancy on the AC response and clarified that electron scattering by the vacancy state around the Fermi level induces capacitive response 13,14 in contrast to pristine metallic CNTs which behave inductively.…”

“…In fact, we showed that the AC response depends on the position of a defect, while the DC response does not. 13,14 In this paper, we examine the AC response of metallic SWNTs with a single defect from first principles with the combination of the DFT and the NEGF method. As typical examples, we take the single atomic vacancy, 5-6 defect and Stone-Wales defect.…”