Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices

Sang, Liwen

doi:10.1080/26941112.2021.1980356

Cited by 60 publications

(23 citation statements)

References 99 publications

(116 reference statements)

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“…GaN has a wide application and is not only limited to power electronics. Due to GaNs ability to conduct electrons more efficiently than silicon, GaN is also used in radio, light-emitting diode [24][25][26], in HEMTs [27], laser photodiode detectors [28], and radiation detectors [29].…”

Section: Problem With Using Gan As a Secondary Rectifiermentioning

confidence: 99%

High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier

et al. 2022

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This paper presents a new technique to mitigate the high voltage stress on the secondary gallium nitride (GaN) transistor in a high step-up flyback application. GaN devices provide a means of achieving high efficiency at hundreds (and thousands) of kHz of switching frequency. Presently however, commercially available GaN is limited to only a 650 V absolute voltage rating. Such a limitation is challenging in high step-up flyback applications due to the secondary leakage. The leakage imposes high voltage stress on the secondary GaN rectifier during its turn-off transient. Such stress may cause irreversible damage to the GaN device. A new method of leakage bypass is presented to mitigate the high voltage stress issue. The experimental results suggest that when compared to conventional secondary active clamp, a 2.3-fold reduction in overshoot voltage stress percentage is achievable with the technique. As a result, it is possible to utilize GaN as the rectifier while keeping the peak voltage stress within the 650 V limitation with the technique.

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Section: Problem With Using Gan As a Secondary Rectifiermentioning

confidence: 99%

High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier

et al. 2022

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“…Diamond exhibits excellent thermal conductivity (≥2000 W/mK), electrical insulation, high-temperature resistance, and corrosion resistance, thereby efficiently transferring the heat concentrated in devices [ 11 ]. Several reported techniques have been developed using diamonds as a hybrid heat spreader or in combination with microfluidics for thermal management [ 12 , 13 , 14 ]. Among these techniques, bonding closer to the heat junction requires lower thermal interface resistance (TIR) to promote higher 3D heat transfer.…”

Section: Introductionmentioning

confidence: 99%

Bottom-Up Cu Filling of High-Aspect-Ratio through-Diamond vias for 3D Integration in Thermal Management

Zhao

Wei

et al. 2023

Micromachines

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Three-dimensional integrated packaging with through-silicon vias (TSV) can meet the requirements of high-speed computation, high-density storage, low power consumption, and compactness. However, higher power density increases heat dissipation problems, such as severe internal heat storage and prominent local hot spots. Among bulk materials, diamond has the highest thermal conductivity (≥2000 W/mK), thereby prompting its application in high-power semiconductor devices for heat dissipation. In this paper, we report an innovative bottom-up Cu electroplating technique with a high-aspect-ratio (10:1) through-diamond vias (TDV). The TDV structure was fabricated by laser processing. The electrolyte wettability of the diamond and metallization surface was improved by Ar/O plasma treatment. Finally, a Cu-filled high-aspect-ratio TDV was realized based on the bottom-up Cu electroplating process at a current density of 0.3 ASD. The average single-via resistance was ≤50 mΩ, which demonstrates the promising application of the fabricated TDV in the thermal management of advanced packaging systems.

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“…Moreover, large-area diamond fabrication is another significant factor concerning the applicability of the various diamond structures fabricated using these processes. Because of the very high thermal conductivity of diamonds, lots of research is being conducted to integrate them into high power, high frequency, and high processing capacity devices to be used as heat spreaders. , Thus, to properly realize the theoretical potential of diamonds, it is important to explore the growth of diamonds from different precursors and analyze the nucleation and subsequent growth mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Cost-Effective Synthesis of Diamond Nano-/Microstructures from Amorphous and Graphitic Carbon Materials: Implications for Nanoelectronics

Haque

Liu

Taqy

et al. 2023

ACS Appl. Nano Mater.

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The synthesis of diamonds with different microstructures is important for various applications including nanoelectronic devices where diamonds can be implemented as heat spreaders. Here we report the synthesis of functional diamond microstructures and coatings, including diamond microfibers, microspheres, tubes, and large-area thin film, using amorphous and graphitic carbon precursors by hot filament chemical vapor deposition. The characteristics of microstructures depend upon initial carbon precursors and their laser annealing pretreatments. Low-cost and abundant carbon precursors act as diamond nucleation sites and accelerate diamond growth, while laser annealing can further promote the nucleation and growth of diamond. As a result, carbon microfibers are converted to diamond microfibers, while large diamond microspheres are formed from multipulse laser-annealed carbon microfibers. Both of the diamond structures consist of 5-fold twinned microcrystallites. Highly dense and phase-pure diamond films are observed using porous carbon seed, and individual diamond tubes with porous walls are obtained by using carbon nanotube hollow fibers. The electron backscatter diffraction analysis confirms the diamond cubic lattice structure, while sharp diamond peaks (1331–1333 cm–1) in Raman spectra demonstrate the excellent diamond quality of prepared diamond microstructures.

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Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices

Cited by 60 publications

References 99 publications

High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier

High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier

Bottom-Up Cu Filling of High-Aspect-Ratio through-Diamond vias for 3D Integration in Thermal Management

Cost-Effective Synthesis of Diamond Nano-/Microstructures from Amorphous and Graphitic Carbon Materials: Implications for Nanoelectronics

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