Diamond CVD by a Combined Plasma Pretreatment and Seeding Procedure

Rotter, Shlomo; Madaleno, J. C.

doi:10.1002/cvde.200806745

Cited by 29 publications

(30 citation statements)

References 27 publications

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“…At the beginning of the deposition, an amorphous carbon pre-growth layer was deposited from a 3% CH 4 /H 2 source gas ratio (CH 4 = 6.00 sccm, B 2 H 6 = 2.00 sccm, H 2 = 196 sccm) for 20 min at 600 90 W and 35 torr. This carbon layer further enhances the nucleation of diamond on the surface (29,30). At the end of this period, the CH 4 flow was adjusted to give a 1% CH 4 /H 2 ratio that was used for primary diamond growth (CH 4 = 2.00 sccm, B 2 H 6 = 2.00 sccm, H 2 = 196 sccm).…”

Section: 1 Diamond Deposition On Pt Wiresmentioning

confidence: 99%

Electrochemical activation of diamond microelectrodes: implications for the in vitro measurement of serotonin in the bowel

Durán

Brocenschi

Galligan

et al. 2014

Analyst

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The electrochemical pretreatment of diamond microelectrodes was investigated for the purpose of learning how an anodic, cathodic or a combined anodic + cathodic polarization affects the charge-transfer kinetics for two surface-sensitive redox systems: ferri/ferrocyanide and serotonin (5-hydroxytryptamine, 5-HT). The pretreatments were performed in 0.5 mol L−1 H2SO4. The anodic pretreatment was performed galvanically for 30 s at 250 mA cm−2. The 10 cathodic pretreatment was performed for 180 s at −250 mA cm−2. The combined pretreatment involved application of the anodic step first followed by the cathodic step. The results clearly demonstrate that the best performance for both redox systems is obtained after the cathodic polarization, which presumably activates the electrode by cleaning the surface and removing site-blocking surface carbon-oxygen functionalities. The cathodic pretreatment was found to be effective at activating a fouled microelectrode in situ. This observation has important implication for the measurement of 5-HT in the bowel.

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Section: 1 Diamond Deposition On Pt Wiresmentioning

confidence: 99%

Electrochemical activation of diamond microelectrodes: implications for the in vitro measurement of serotonin in the bowel

Durán

Brocenschi

Galligan

et al. 2014

Analyst

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“…The same tendency was observed with other samples. These results are not surprising since it is known that the exposure of the substrates to diamond growth conditions before the seeding step increases nucleation density and decreases coalescence time [29].…”

Section: Diamond-sic Heterojunctionsmentioning

confidence: 61%

“…For each seeding procedure used (ND vs. scratch), the PT has a positive influence, since it increases the rectification index. In fact, the PT is known to lead to higher diamond nucleation densities and improved interface uniformity [29], with the decrease of grain boundaries density at the diamond/SiC interface -and corresponding decrease of interface states.…”

Section: B Results and Discussionmentioning

confidence: 99%

Diamond / SiC heterojunctions

Mukherjee

Mendes

Alves

et al. 2016

2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

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Abstract-Diamond and SiC are wide bandgap (WBG) materials which can be used to fabricate high power devices with improved performance. The combination of these materials into one single device is expected to bring some benefits, like a better thermal management with a corresponding increase in the operating power. Diamond films deposited by Chemical Vapor Deposition (CVD) can be doped with boron, making them p-type semiconductors. Diamond films deposited on foreign substrates are intrinsically polycrystalline, so the quality of the interface, determined by deposition conditions and seeding method, plays a critical role in the heterojunction characteristics, impacting both reverse current and breakdown voltage. This work reports the fabrication and characterization of p-diamond / n-SiC heterojunctions. P-type polycrystalline diamond (PCD) films were deposited directly on the surface on n-type SiC commercial wafers by Hot Filament CVD (HFCVD) using different seeding techniques. I-V characteristics of the obtained heterojunctions were measured at room temperature and the quality and morphology of the diamond films were assessed by scanning electronic microscopy (SEM) and Raman spectroscopy. The influence of the different seeding techniques on the I-V characteristics is discussed.

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“…Different seeding and substrate pretreatment techniques have been established to enhance the nucleation and continuity of NCD and UNCD films. [10][11][12][13][14] The most widely applied substrate seeding method consists of an ultrasonic treatment in a suspension of diamond powders. 15 Extremely high nucleation densities ͑ϳ10 11 sites/ cm 2 ͒ have been reported on using monodispersed nanometer-sized diamond particles in aqueous solutions 16 and slurries in dimethylsulfoxide.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of the nucleation of smooth and dense nanocrystalline diamond films by using molybdenum seed layers

Buijnsters

Vázquez

Dreumel

et al. 2010

Journal of Applied Physics

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A method for the nucleation enhancement of nanocrystalline diamond ͑NCD͒ films on silicon substrates at low temperature is discussed. A sputter deposition of a Mo seed layer with thickness 50 nm on Si substrates was applied followed by an ultrasonic seeding step with nanosized detonation diamond powders. Hot-filament chemical vapor deposition ͑HF-CVD͒ was used to nucleate and grow NCD films on substrates heated up at 550°C. The nucleation of diamond and the early stages of NCD film formation were investigated at different methane percentages in methane/ hydrogen gas mixtures by atomic force microscopy, micro-Raman spectroscopy, scanning electron microscopy, and grazing incidence x-ray analyses in order to gain specific insight in the nucleation process of NCD films. The nucleation kinetics of diamond on the Mo-coated Si substrates was found to be up to ten times higher than on blank Si substrates. The enhancement of the nucleation of diamond on thin Mo interlayers results from two effects, namely, ͑a͒ the nanometer rough Mo surface shows an improved embedding of ultrasonically introduced nanosized diamond seeds that act as starting points for the diamond nucleation during HF-CVD and ͑b͒ the rapid carbonization of the Mo surface causes the formation of Mo 2 C onto which diamond easily nucleates. The diamond nucleation density progressively increases at increasing methane percentages and is about 5 ϫ 10 10 cm −2 at 4.0% methane. The improved nucleation kinetics of diamond on Mo interlayers facilitates the rapid formation of NCD films possessing a very low surface roughness down to ϳ6 nm, and allows a submicron thickness control.

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Diamond CVD by a Combined Plasma Pretreatment and Seeding Procedure

Cited by 29 publications

References 27 publications

Electrochemical activation of diamond microelectrodes: implications for the in vitro measurement of serotonin in the bowel

Electrochemical activation of diamond microelectrodes: implications for the in vitro measurement of serotonin in the bowel

Diamond / SiC heterojunctions

Enhancement of the nucleation of smooth and dense nanocrystalline diamond films by using molybdenum seed layers

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