Diamond CVD film formation onto WC–Co substrates using a thermally nitrided Cr diffusion-barrier

Hojman, E.; Akhvlediani, R.; Layyous, A.; Hoffman, A.

doi:10.1016/j.diamond.2013.08.002

Cited by 30 publications

(5 citation statements)

References 47 publications

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“…Hence, the number of bulged clusters increased with the increase of the TMS flow rate increment, which led to surface morphology variations. The rough interlayer surface with micro-defects can promote the diamond nucleation by reducing the critical nucleation energy and enhance adhesion by increasing the mechanical interlocking force [31,32]. The root mean squared roughness of the bi-interlayer surface over an area of 100 m 2 is given in the inserted AFM images.…”

Section: The Microstructure Of the Prepared Hfc-sic Mixed Bi-interlayersmentioning

confidence: 99%

Gradient-Modified HfC-SiC Mixed Bi-Interlayers Synthesized under Different TMS Flow Rate Increment for Depositing Diamond Coating onto WC-Co Substrate

Zheng

Gao

et al. 2020

Materials

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To deposit well-adhered diamond coating, gradient-modified hafnium carbide-silicon carbide (HfC-SiC) mixed bi-interlayers were prepared on cemented carbides (WC-Co) by plasma surface metallurgy technique under the different tetramethylsiline (TMS) flow rate increment. The effects of the TMS flow rate increment on the composition, microstructure, adhesion, and hardness of the bi-interlayers were investigated. Then, the well-adhered bi-interlayer was chosen for the deposition of the diamond coating. It was found that the HfC-SiC mixed bi-interlayers consisted of a diffusion-modified HfC-riched inner layer and a SiC-riched outer layer. The TMS flow rate increment played a key role in tailoring the surface morphology, thickness, and interface character of the bi-interlayer. The dense nanocrystalline diamond coating was formed on the optimized bi-interlayer at the increment of 0.20 sccm/2 min. The diamond coating showed excellent adhesion, which was benefited from the cobalt (Co) diffusion inhibition, gradient composition distribution, and mechanical interlocking.

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Section: The Microstructure Of the Prepared Hfc-sic Mixed Bi-interlayersmentioning

confidence: 99%

Gradient-Modified HfC-SiC Mixed Bi-Interlayers Synthesized under Different TMS Flow Rate Increment for Depositing Diamond Coating onto WC-Co Substrate

Zheng

Gao

et al. 2020

Materials

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“…Besides, metal interlayers will react with carbon atoms at high temperature, forming brittle carbides [17,18] . When it comes to ceramic interlayers, whose thermal expansion coefficient is larger than diamond and small than steel [17,19] , they easily crack during HFCVD process due to poor toughness [20] .…”

Section: Introductionmentioning

confidence: 99%

Microstructure evolution of thermal spray WC–Co interlayer during hot filament chemical vapor deposition of diamond thin films

Yang

Wei

et al. 2015

Journal of Alloys and Compounds

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“…SiC in excess during the thermodiffusion process avoids boron oxide formation. KBF 4 reduce salt bath melting temperature. Graphite powder it added to balance the reaction.…”

Section: Methodsmentioning

confidence: 99%

“…The cobalt (Co) presence in WC-Co is of fundamental importance for the final mechanical properties of the tool, namely toughness, compressive strength and transverse rupture strength, which are fundamental requirements for cutting tools applications. However, cobalt chemically interacts with carbon atoms during chemical vapor deposition of diamond films due to its 3d incomplete sublevel, producing a graphitic phase 1-3 on the substrate surface, inhibiting the direct deposition of CVD diamond films on WC-Co. Several pretreatments to avoid Co harmful effects have been tried, as shown in literature [4][5][6] . Boriding technique 7 forms an intermediate barrier that blocks Co diffusion to the substrate surface, minimizing the Co binder negative effects for diamond growth.…”

Section: Introductionmentioning

confidence: 99%

Influence of Boriding Process in Adhesion of CVD Diamond Films on Tungsten Carbide Substrates

et al. 2015

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This paper shows successful hindering of the negative effects of the cobalt binder in the process of coating WC-Co cutting tools with CVD diamond films. The strategy was creating a boron-rich layer on the surface of the WC-Co substrates as an interlayer to block Co migration. The traditional boriding technique was improved by preheating the salt powders and controlling the brittle region thickness in the substrate surface. These procedures produce a tougher surface for diamond growth. Adding CF 4 to the gas mixture also enhanced diamond adhesion to the surface. The adhesion of diamond films to WC-Co substrates was evaluated by indentation tests. Samples were characterized by Scanning Electron Microscopy (SEM), Energy Dispersive X-ray (EDX), X-ray Diffraction (XRD) and Raman Scattering Spectroscopy (RSS).

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Diamond CVD film formation onto WC–Co substrates using a thermally nitrided Cr diffusion-barrier

Cited by 30 publications

References 47 publications

Gradient-Modified HfC-SiC Mixed Bi-Interlayers Synthesized under Different TMS Flow Rate Increment for Depositing Diamond Coating onto WC-Co Substrate

Gradient-Modified HfC-SiC Mixed Bi-Interlayers Synthesized under Different TMS Flow Rate Increment for Depositing Diamond Coating onto WC-Co Substrate

Microstructure evolution of thermal spray WC–Co interlayer during hot filament chemical vapor deposition of diamond thin films

Influence of Boriding Process in Adhesion of CVD Diamond Films on Tungsten Carbide Substrates

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