Diamond field emission devices

Davidson, J.L.; Kang, W.P.; Wisitsoraat, Anurat

doi:10.1016/s0925-9635(03)00041-4

Cited by 29 publications

(16 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…According to the low or negative electron affinity (NEA) 1–3, diamond has been expected for a superior cold cathode with not only high efficiency but also high net current (or high current density).…”

Section: Introductionmentioning

confidence: 99%

Electron emission from diamond p–i–n junction diode with heavily P‐doped n⁺ top layer

Takeuchi

Makino

Kato

et al. 2011

Physica Status Solidi (a)

View full text Add to dashboard Cite

We found clear improvement in electron emission performances in low injection region of hydrogenated diamond p–i–n junction diodes with heavily phosphorous‐doped (P‐doped) n+ “top” layer, where the “top” layer faced to a collector electrode. The emission started just below 4.5 V, that is the built‐in potential expected as diamond p–n junction diode with boron acceptors and phosphorous donors. In this flat‐band condition, the electron emission efficiency (η) reached to 0.2% during room temperature (RT) operation, and η > 1% during 573 K operation were obtained, whereas, the previous diamond p–i–n junction diode without the heavily P‐doped top layer showed η < 10−6% in these temperature ranges. In such low injection region, the results indicated that direct emission of electrons injected from n‐layer to i‐layer contributed to the electron emission. With high diode current Id = 80 mA, we obtained the highest emission net current Ie = 78 µA up to now, and the η = 0.1% during RT operation. A dependence of η upon the forward diode current suggested that there were two electron emission mechanism in the same sample. Electroluminescence results suggested that exciton‐derived electron emission might be concerned in the high current injection region.

show abstract

Section: Introductionmentioning

confidence: 99%

Electron emission from diamond p–i–n junction diode with heavily P‐doped n⁺ top layer

Takeuchi

Makino

Kato

et al. 2011

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…The calculation of n i took into account the effective masses of electrons (0.57) and holes (0.69) and the temperature dependence of the bandgap energy and carrier densities [35,44,65]. n n0 and p p0 were calculated using a donor density of 5 × 10 17 cm −3 and an acceptor density of 5 × 10 15 cm −3 (which treats the I-layer as a P-layer), respectively, based on the SIMS result shown in Fig.…”

Section: Pin Junction Electron Emittersmentioning

confidence: 99%

“…There have been many reports on the development of uniquely structured diamond electron emission devices that achieved high electron emission efficiency [44][45][46][47][48]. These gave superior performances as electron emitters.…”

Section: Introductionmentioning

confidence: 99%

Diamond PN/PIN Diode Type Electron Emitter with Negative Electron Affinity and Its Potential for the High Voltage Vacuum Power Switch

Takeuchi

Koizumi

2014

Topics in Applied Physics

View full text Add to dashboard Cite

This chapter reviews the electron emission properties of hydrogen terminated diamond surfaces with a "true" negative electron affinity (NEA), and presents the recent development of electron emitters based on diamond PN and PIN junctions, that could apply to a high voltage vacuum power switch. The background to this topic, including the emission mechanism with free excitons, and carrier injection with a hopping conduction, is also introduced.

show abstract

“…10 Compared to molded FEAs, control of the tip shape is more difficult when completed emitters are coated to provide a range of tip materials. [12][13][14][15][16][17][18] 19 mA emission current was achieved from ungated diamond FEAs with 10 7 tips and total emitter area of ϳ1 cm 2 . Due to properties including low electron affinity and high thermal conductivity, diamond rapidly became the material of most interest.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of all-metal field emitter arrays with controlled apex sizes by molding

Kirk

Tsujino

Vogel

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inStable, ruggedized, and nanometer-order size transfer mold field emitter array in harsh oxygen radical environment J. Vac. Sci. Technol. B 33, 03C107 (2015); 10.1116/1.4905046 Fabrication of metallic double-gate field emitter arrays and their electron beam collimation characteristics J. Appl. Phys. 112, 093307 (2012); 10.1063/1.4764925 Nanosecond pulsed field emission from single-gate metallic field emitter arrays fabricated by moldinga) J. Vac. Sci. Technol. B 29, 02B117 (2011); 10.1116/1.3569820 Enhancement of ion-induced bending phenomenon using a double-layered film for field emitter array fabrication J. Vac. Sci. Technol. B 28, C2C1 (2010); 10.1116/1.3276096Microelectron field emitter array with focus lenses for multielectron beam lithography based on silicon on insulator waferThe authors proposed a method to fabricate field emitter arrays with uniform apex diameters in tens of nanometer scale based on the molding technique and apply it to fabricate molybdenum field emitter arrays. Apex diameter equal to 23Ϯ 5 nm was observed in a 6 ϫ 6 tip array by high-resolution scanning electron microscope. They also studied the field-emission characteristics in devices with gate electrodes fabricated on top of the arrays by a self-aligned process. In single-gate devices, emission current of up to 20 A per tip with negligible gate leak current was observed. The gate-fabrication process was extended to fabricate double-gated emitters. Further optimization of the fabrication process for higher emission current, together with metallurgical and lithographic methods, is discussed.

show abstract

Diamond field emission devices

Cited by 29 publications

References 29 publications

Electron emission from diamond p–i–n junction diode with heavily P‐doped n⁺ top layer

Electron emission from diamond p–i–n junction diode with heavily P‐doped n⁺ top layer

Diamond PN/PIN Diode Type Electron Emitter with Negative Electron Affinity and Its Potential for the High Voltage Vacuum Power Switch

Fabrication of all-metal field emitter arrays with controlled apex sizes by molding

Contact Info

Product

Resources

About

Diamond field emission devices

Cited by 29 publications

References 29 publications

Electron emission from diamond p–i–n junction diode with heavily P‐doped n+ top layer

Electron emission from diamond p–i–n junction diode with heavily P‐doped n+ top layer

Diamond PN/PIN Diode Type Electron Emitter with Negative Electron Affinity and Its Potential for the High Voltage Vacuum Power Switch

Fabrication of all-metal field emitter arrays with controlled apex sizes by molding

Contact Info

Product

Resources

About

Electron emission from diamond p–i–n junction diode with heavily P‐doped n⁺ top layer

Electron emission from diamond p–i–n junction diode with heavily P‐doped n⁺ top layer