Diamond-Like Amorphous Carbon Films Deposited for Field-Emission Use by Upper-Electrode-RF-Power-Controlled Supermagnetron Plasma

Abstract

Nitrogenated and hydrogenated diamond-like amorphous carbon (DAC:N and DAC:H) films were synthesized using i-C4H10/(N2 and H2) supermagnetron plasma, respectively. The upper- and lower-electrode rf powers (UPRF/LORF) were controlled to be 100–800/100 W, and N2 and the H2 concentrations were selected to be 25 and 20%, respectively. In the DAC:N layer deposited at 300/100 W, the nitrogen atom concentration was measured to be 1.7 mass %. In the case of DAC:N film, the lowest threshold electric field intensity (E TH) was observed to be 12 V/µm at the growth condition of 300/100 W. In the case of a DAC:H planar structure, the lowest E TH was 13 V/µm for 800/100 W deposition. In both types in the films with the lowest E TH, we observed the same optical band gap of approximately 1.2 eV. The optimum distribution and size of sp2 CC nanoclusters formed in both the DAC layers probably caused the E TH to decrease.

Fowler-Nordheim Tunneling, Photovoltaic Applications and New Band Structure Models of Electroconductive a-CN<sub>x</sub>:H Films Formed by Supermagnetron Plasma CVD

“…Low-residual-stress films might be effective for use in electronic devices, such as vacuum field emitters and photovoltaic cells. Continuous RF SMP has been used to deposit electroconductive a-CN x :H films with a lower fieldemission threshold of 9 -12 V/μm in spite of its high deposition-wafer temperature [24] [25] [26]. Reduction of the wafer temperature using PRF SMP enables to use low melting substrates such as Al for the fabrication of a-CN x :H field emitters [27], because of the decreased degradation of the interface state between the substrate and the grown electroconductive a-CN x :H film.…”

N2 or H2/Isobutane Supermagnetron Plasma Chemical Vapor Deposition of Hydrogenated Amorphous CNx Films for Application to Elementary Amorphous CNx:H/p-Si Photovoltaic Cell

“…Hydrogenated amorphous carbon (a-C:H) films are of great interest because their unique properties are suited to a wide range of opto-electronic and vacuum microelectronic devices, including light emission diodes, photovoltaic cells and field electron emission devices. [1][2][3][4][5][6][7][8][9][10] In these films, both the optical and electrical properties, as well as the mechanical properties, can be modified by nitrogen incorporation; i.e., they become hydrogenated amorphous carbon nitride (a-CN x :H) films. [11][12][13][14][15][16] a-CN x :H films sometimes show high electroconductivity when nitrogen atoms are doped in the films.…”

Deposition of a-CN<sub>x</sub>:H Films Using Uniform Supermagnetron Plasma under a Stationary Magnet Field

“…High-uniformity deposition of hydrogenated amorphous carbon nitride (a-CN x :H) films is essential for the fabrication of the high-reliability devices that depend on these films, such as opto-electronic and vacuum microelectronic devices, including light emission diodes and field electron emission devices [1][2][3][4][5][6][7]. High-density plasma can be easily generated by magnetron discharge; however, the application of a magnetic field can cause unevenness in the localization of the plasma [8,9].…”