Conspectus
Microelectromechanical systems
(MEMS) that integrate tiny mechanical
devices with electronics on a semiconductor substate have experienced
explosive growth over the past decades. MEMS have a range of wide
applications from accelerometers and gyroscopes in automotive safety,
to precise reference oscillators in consumer electrons to probes in
atomic force microscopy and sensors for gravitational wave detection.
The quality (Q)-factor is a fundamental parameter
of a MEMS resonator that determines the sensitivity, noise level,
energy efficiency, and stability of the device. MEMS with low energy
dissipation have always been pursued. Despite the brilliant progress
of silicon-based MEMS due to the mature technology in counterpart
microelectronics, the intrinsic material properties limit the sensitivity
and reliability, especially for the applications under extreme conditions.
Diamond has emerged as the ideal semiconductor material for low-energy
dissipation MEMS with high performance and high reliability, owing
to its unparalleled material properties, such as extremely high mechanical
strength, superelectrical properties, highest thermal conductivity,
and chemical inertness. Diamond resonators are thus expected to exhibit
high Q-factors, and high reliability, with low thermomechanical
force noise and long coherence rate of mechanical quantum states,
not only improving the performance of MEMS devices but also expanding
to the quantum domain. Single-crystal diamond (SCD) is desirable to
achieve the ultralow energy loss or high Q-factor
MEMS resonator due to the nonexistence of grain boundaries and other
carbon phases. However, micromachining for SCD is tough and heteroepitaxial
growth of SCD on foreign substrates remains quite difficult.
In this Account, we provide an overview of the recent research
and strategies in SCD diamond MEMS for achieving high Q-factors, focusing on those fabricated by the smart-cut method developed
in our lab. We start with the concept of diamond MEMS, covering structure
fabrication, fundamentals, and applications. A comprehensive discussion
of the energy dissipation mechanisms on the Q-factors
in diamond MEMS resonators is provided. The approaches to enhance
the Q-factor of diamond resonators including (1)
the growth of high crystal quality SCD epilayer on the ion-implanted
substrate, (2) defects engineering, and (3) strain engineering by
thinning the resonator to around 100 nm thick are presented. In the
smart-cut method, the ∼100 nm thick defective layer contributes
to the main intrinsic energy loss. By combing the growth of a high
crystal quality diamond epilayer above the defective layer and the
atomic scale etching of the defective layer, the Q-factors could be improved from thousands to over one million at
room temperature, the highest among all the semiconductors. The intrinsic
high Q-factors of SCD MEMS are also due to the well-controlled
purity of the diamond epilayer and the ultrawide bandgap energy of
diamond. Through strain engineering of the SCD MEMS beam to nanoscale,
t...