Diamond photodetector response to deep UV excimer laser excitation

Lansley, Stuart P.; McKeag, Robert D.; Whitfield, Michael D.; Rizvi, Nadeem Hasan; Jackman, Richard B.

doi:10.1016/s0925-9635(03)00064-5

Cited by 7 publications

(1 citation statement)

References 25 publications

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“…Recently, MSM photoconductors with ns time response have been presented. 32) A negative effect on the spectral photoresponse of the diamond/WC photodiode is the type-Ib diamond substrate. The substrate affects the photoresponse when the reverse bias is large enough to make the electric field penetrate it.…”

Section: Comparisons Among Diamond-based Duv Photodiodesmentioning

confidence: 99%

Thermal Stability of Diamond Photodiodes Using Tungsten Carbide as Schottky Contact

Liao

Alvarez

Koide

2005

Jpn. J. Appl. Phys.

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Deep-ultraviolet (DUV) photodiodes are fabricated using tungsten carbide (WC) Schottky and Ti/WC ohmic contacts on lightly boron-doped homoepitaxial diamond thin films. The thermal stability of the electrical and optical properties of the photodiodes upon isothermal annealing at 500°C for 5 h in argon/air ambient is demonstrated. The ideality factor is improved to unity after annealing for 1 h and increases to around 1.5 after subsequent annealing for longer time periods. The leakage current for at least 30 V reverse bias is lower than 10-14 A before and after annealing for 4 h. The photoresponsivity at 220 nm is enhanced markedly by a factor of 103 after annealing, resulting in a DUV/visible blind ratio as large as 106 at 2 V reverse bias. In addition, the effects of annealing and applied bias on decay times and photoresponse spectra are examined, respectively. These results are discussed in terms of surface modification of the initially oxidized diamond epilayer.

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Section: Comparisons Among Diamond-based Duv Photodiodesmentioning

confidence: 99%