Dicarbon defects in carbon-doped GaAs

Effects of carbon tetrabromide flux, substrate temperature and growth rate on carbon-doped GaAs grown by molecular beam epitaxy

“…In this direction, the lattice parameter of the C-C pair is smaller than the As atom. (ii) Tan et al [13] have reported the dicarbon defects in compensated GaAs:C induced by high substrate temperature, are mainly oriented along the [1 1 1] crystal direction. In this direction, the lattice parameter of the C-C pair is larger than the As atom.…”

“…On one hand, part of the C As is incorporated into the C-C pair; while on the other hand, the C-C pair behaves as a donor. Therefore, there exists a relationship as follows [13] …”

“…Similar results reported by other groups [12,16] indicate the formation of C-C pairs at high substrate temperature. Tan et al [13] have reported that the dicarbon defects formed at high substrate temperature are mainly oriented along the [1 1 1] direction. Regardless of the orientation direction of the dicarbon defects, they result in reduction of the hole concentration.…”

“…The lattice mismatch data of compensated samples with dicarbon defects reported in Ref. [13] are plotted in Fig. 3 for comparison.…”

“…The samples in Ref. [13] were grown at high substrate temperature, and the dicarbon defects are mainly oriented along the [1 1 1] direction with high compensation level. Fig.…”