Dielectric and ferroelectric properties of fine grains Pb(In1/2Nb1/2)O3–PbTiO3 ceramics

Wongsaenmai, Supattra; Tan, Xiaoli; Ananta, Supon; Yimnirun, Rattikorn

doi:10.1016/j.jallcom.2006.12.053

Cited by 36 publications

(25 citation statements)

References 31 publications

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“…However, very limited studies of PIN-PMN-PT ceramics can be found in the literature [11,12]. On the other hand, the solid solution of the PIN-PT binary system exhibits a morphotropic phase boundary (MPB) near 37 mol% PT, where high piezoelectric and dielectric properties can be obtained [5,13]. The Curie temperature for PIN-PT with MPB composition is about 320°C, much higher than that of PMN-PT [5].…”

Section: Introductionmentioning

confidence: 99%

Phase transitional behavior and electrical properties of Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 ternary ceramics

Chang

Yang

et al. 2014

J Mater Sci: Mater Electron

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Relaxor based ternary (0.60 -x)Pb(In 1/2 Nb 1/2 ) O 3 -0.40Pb(Mg 1/3 Nb 2/3 )-xPbTiO 3 ((0.60 -x)PIN-0.40PMN-xPT) polycrystalline ceramics were synthesized by twostep columbite precursor method. The effects of PIN/PT content on phase structure, microstructure, density, and dielectric, piezoelectric, ferroelectric and pyroelectric properties of the ternary ceramics were systematically investigated. A morphotropic phase boundary (MPB) near x = 0.34 was identified by X-ray diffraction and further confirmed by their respective electrical properties. Piezoelectric, ferroelectric and pyroelectric properties were enhanced for compositions near the MPB. The 0.26PIN-0.40PMN-0.34PT ceramics show optimum electrical properties: piezoelectric coefficient d 33 = 505 pC/N, planar electromechanical coupling factor k p = 62.5 %, remnant polarization P r = 32.1 lC/cm 2 , coercive field E c = 8.8 kV/cm, and room temperature pyroelectric coefficient p = 0.050 lC/cm 2°C . In addition, the rhombohedraltetragonal phase transition temperature T rt and Curie temperature T c of the ternary ceramics were identified by the temperature dependence of dielectric and pyroelectric measurements, which are much higher than those of binary PMN-PT ceramics, indicating the expanded temperature usage range of the ternary ceramics. The results show that this ternary system is a promising candidate for electromechanical applications with high performance and wide temperature usage range.

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Section: Introductionmentioning

confidence: 99%

Phase transitional behavior and electrical properties of Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 ternary ceramics

Chang

Yang

et al. 2014

J Mater Sci: Mater Electron

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“…No lattice distortion was observed. This structure does not exhibit ferroelectric properties [22,23].…”

Section: Resultsmentioning

confidence: 93%

Synthesis of PbTiO₃Thin Films by Annealing Multilayer Oxide Structures in Vacuum

Iljinas

Stankus

Kaliasas³

2016

Acta Phys. Pol. A

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This article presents investigation of syntheses of perovskite PbTiO3 thin films by using reactive magnetron layer-by-layer deposition on Si (100) substrate and post-annealing in air and vacuum (p = 5 × 10 −3 Pa). The film stoichiometry was accurately controlled by the deposition of individual layers with the required (≈ 1 nm) thickness, using the substrate periodic moving over targets. Deposited thin films were annealed in air and in vacuum at 670• C and 770• C for 1 h, respectively. The morphological, structural, and chemical properties of thin films deposited at 300• C substrate temperature and post-annealed thin films using either conventional annealing and thermal annealing in vacuum at different temperatures were investigated and compared between. X-ray diffraction measurements of thin films annealed in air show formed crystalline perovskite PbTiO3 phase with tetragonality c/a = 1.047. The crystallite size of oxidized films depends on the substrate temperature. The structure of post annealed in vacuum thin films strongly depends on Pb/Ti atomic ratio. It was observed that the best structure and morphology forms when atomic ratio of Pb/Ti was 0.80. Pseudocubic phase of lead titanate forms with sufficiently low tetragonality at 670• C temperature.

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“…More information on the above mentioned characteristics can be found in previous publications [21,22]. By X-ray diffraction method, the phase and structural information of the PIN-PT ceramics was established [22].…”

Section: Resultsmentioning

confidence: 99%

Dielectric properties of PIN–PT ceramics under compressive stress

Yimnirun

Wongsaenmai

Ananta

et al. 2009

Current Applied Physics

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Dielectric and ferroelectric properties of fine grains Pb(In1/2Nb1/2)O3–PbTiO3 ceramics

Cited by 36 publications

References 31 publications

Phase transitional behavior and electrical properties of Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 ternary ceramics

Phase transitional behavior and electrical properties of Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 ternary ceramics

Synthesis of PbTiO₃Thin Films by Annealing Multilayer Oxide Structures in Vacuum

Dielectric properties of PIN–PT ceramics under compressive stress

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Dielectric and ferroelectric properties of fine grains Pb(In1/2Nb1/2)O3–PbTiO3 ceramics

Cited by 36 publications

References 31 publications

Phase transitional behavior and electrical properties of Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 ternary ceramics

Phase transitional behavior and electrical properties of Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 ternary ceramics

Synthesis of PbTiO3Thin Films by Annealing Multilayer Oxide Structures in Vacuum

Dielectric properties of PIN–PT ceramics under compressive stress

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Synthesis of PbTiO₃Thin Films by Annealing Multilayer Oxide Structures in Vacuum