2005
DOI: 10.1557/jmr.2005.0342
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Dielectric and microstructural properties of barium titanate zirconate thin films on copper substrates

Abstract: Barium titanate zirconate, Ba(Ti 1−x Zr x )O 3 (0 ഛ x ഛ 0.25), thin films were deposited via the chemical solution deposition (CSD) method directly on copper foils. The films were processed in a reductive atmosphere containing nitrogen, water vapor, and hydrogen gas at 900°C to preserve the metallic copper substrate during crystallization. Increasing the fraction of BaZrO 3 revealed several effects, including an increase in unit cell dimensions, a decrease in both the temperature and value of the maximum permi… Show more

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Cited by 44 publications
(38 citation statements)
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“…Figure 7 shows a plot of the relative permittivity at 20°C as a function of average grain size for the two bulk ceramic studies of Frey et al [3] and Arlt et al, [1] the three thin-film studies of Ihlefeld et al, [25] Waser, [26] and Parker et al, [27] and the current work. The author's previous study of barium titanate thin films on copper substrates shows enhanced permittivities over films grown on traditional substrates with equivalent grain sizes.…”
Section: Full Papermentioning
confidence: 71%
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“…Figure 7 shows a plot of the relative permittivity at 20°C as a function of average grain size for the two bulk ceramic studies of Frey et al [3] and Arlt et al, [1] the three thin-film studies of Ihlefeld et al, [25] Waser, [26] and Parker et al, [27] and the current work. The author's previous study of barium titanate thin films on copper substrates shows enhanced permittivities over films grown on traditional substrates with equivalent grain sizes.…”
Section: Full Papermentioning
confidence: 71%
“…For the survey scans a Average Grain Diameter (nm) Figure 7. Relative permittivity at 20°C plotted vs. the average grain diameter for films from this work and those from the literature (adapted from Ihlefeld et al [25], Parker et al [27], Waser [26], Arlt et al [1], and Frey et al [3].…”
Section: Methodsmentioning
confidence: 99%
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“…5͒ with identical composition, where the maximum in permittivity ranges from 353 to 391 K, it is clear that T C is shifted upward by 74-110 K for PLZT ͑10/ 65/ 35͒ thin films on copper. It should be pointed out in considering this mechanism, however, that the temperature at which peak permittivity occurs has not been found to be shifted for BaTiO 3 thin films on copper foil, 18 although stress development and the resulting electromechanical response are expected to be similar. This seeming inconsistency between PLZT and BaTiO 3 remains to be investigated, although differences in microstructure and internal stress distribution between the PLZT and BaTiO 3 films are likely.…”
Section: Ferroelectric Behavior In Nominally Relaxor Lead Lanthanum Zmentioning
confidence: 99%
“…The sharp ferroelectric to paraelectric phase transition for y ≤ 0.15 becomes broader increasing the substitution rate from 0.15 up to 0.25. A further increase up to 0.40 leads to a relaxor behaviour characterized by a frequency dependent dielectric permittivity maximum [1][2][3][4][5][6][7]. Such a material with a ferroelectric-relaxor crossover, exhibiting thus tunable dielectric behaviour, presents a high potential in terms of applications.…”
Section: Introductionmentioning
confidence: 99%