Dielectric barriers for flexible CIGS solar modules

Herz, K.; Keßler, Friedrich; Wächter, R.; Powalla, Michael; Schneider, J.; Schulz, Andreas; Schumacher, U.

doi:10.1016/s0040-6090(01)01516-4

Cited by 76 publications

(40 citation statements)

References 4 publications

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“…The outdiffusion of impurities is an especially critical problem because the deposition of copper indium gallium diselenide (CIGS) thin film is performed at over 550 o C substrate temperature using a co-evaporation method [8]. If monolithic integration technology of the solar cell devices is applied for fabricating solar modules on electrically conducting substrates, the deposition of a dielectric barrier is necessary for insulation and diffusion barrier [9,10]. Thin Cr layers [11] as well as dielectric layers like Al 2 O 3 [9,12] or SiO 2 [12] have been used as diffusion barriers.…”

Section: Introductionmentioning

confidence: 99%

Effect of Metal Barrier Layer for Flexible Solar Cell Devices on Stainless Steel Substrates

Kim

2017

Appl. Sci. Converg. Technol.

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A thin metal layer of molybdenum is placed between the conventional barrier layer and the stainless steel substrate for investigating the diffusion property of iron (Fe) atoms. In this study, the protection probability was confirmed by measuring the concentration of out-diffused Fe using a SIMS depth profile. The Fe concentration of chromium (Cr) barrier layer with 10 nm molybdenum (Mo) layer is 5 times lower than that of Cr barrier without the thin Mo layer. The insertion of a thin Mo metal layer between the barrier layer and the stainless steel substrate effectively protects the out-diffusion of Fe atoms.

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Section: Introductionmentioning

confidence: 99%

Effect of Metal Barrier Layer for Flexible Solar Cell Devices on Stainless Steel Substrates

Kim

2017

Appl. Sci. Converg. Technol.

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“…Nevertheless, cell and module efficiencies were lower than on glass substrates. The preparation of highly efficient solar cells requires the deposition of a barrier layer to reduce the diffusion of impurities from the metal substrate into the solar cells [3,5]. If monolithical integration of the cells is desired to realize solar modules on electrically conducting substrates, the deposition of a dielectric barrier is necessary [4,5].…”

Section: Introductionmentioning

confidence: 99%

“…The preparation of highly efficient solar cells requires the deposition of a barrier layer to reduce the diffusion of impurities from the metal substrate into the solar cells [3,5]. If monolithical integration of the cells is desired to realize solar modules on electrically conducting substrates, the deposition of a dielectric barrier is necessary [4,5]. Thin Cr layers [3][4][5][6][7][8] as well as dielectric layers like Al 2 O 3 [4,6] or SiO 2 [6] deposited by sputtering or sol-gel techniques have been used as diffusion barriers.…”

Section: Introductionmentioning

confidence: 99%

“…If monolithical integration of the cells is desired to realize solar modules on electrically conducting substrates, the deposition of a dielectric barrier is necessary [4,5]. Thin Cr layers [3][4][5][6][7][8] as well as dielectric layers like Al 2 O 3 [4,6] or SiO 2 [6] deposited by sputtering or sol-gel techniques have been used as diffusion barriers. One of the factors affecting the performance of these devices is the choice of ohmic low resistance and reliable contact materials.…”

Section: Introductionmentioning

confidence: 99%

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Chromium thin film deposition on ITO substrate by RF sputtering

2014

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To obtain a suitable ohmic contact with the lowest resistivity, chromium (Cr) thin films were deposited on transparent conductive oxide indium tin oxide (ITO) by RF sputtering method in argon atmosphere and its electrical properties were optimized. The deposition of Cr thin film has been performed for the layers with thickness of 150, 300 and 600 nm in constant Ar gas flow of 30 SCCM. Results show that the lowest contact resistivity belongs to the layer with 600 nm thickness. Furthermore, Cr/ITO has been studied for five different RF powers of 100, 150, 200, 250 and 300 W. Experimental results show that specific contact resistance of Cr/ITO contact decreases in condition of depositing chromium thin films on ITO at higher RF powers. Analysis of SEM has been performed on the samples. The SEM micrographs show Cr thin films have smaller grains at RF power of 150 W, in comparison with other RF powers. The lowest specific contact resistivity for Cr/ITO has been obtained 4.7 9 10 -2 X cm 2 at RF power of 150 W with 600 nm thickness of chromium thin films.

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“…The barrier has two functions: (a) to provide electrical insulation between the metal substrate and the monolithically interconnected cells; and (b) to reduce the diffusion of impurities from the metal substrate into the above functional layers. Herz et al reported that the best insulating barriers could be achieved with 6-μm thick composited layers of SiO x (plasma enhanced chemical vapor deposition, PECVD for short, 3 μm)/SiO x (Sol-gel, 3 μm) or SiO x (PECVD, 3 μm)/Al 2 O 3 (sputtered, 3 μm) [11]. Kessler et al reported that a suitable SiO x dielectric barrier was obtained by PECVD on a titanium metal foil [12].…”

Section: Introductionmentioning

confidence: 99%

Electrical insulation and bending properties of SiOx barrier layers prepared on flexible stainless steel foils by different preparing methods

Leng

et al. 2011

Thin Solid Films

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a b s t r a c t a r t i c l e i n f oStainless steel foils on which flexible display devices and integrated solar modules are prepared need to be coated by barrier layers for electrical insulation. In this study, SiO x barrier layer was prepared on steel foils (SUS 304) by ion beam assisted deposition, Sol-gel deposition and plasma enhanced chemical vapor deposition, respectively. The electrical properties of the SiO x films, such as resistance, reactance, leakage current density, breakdown field strength and performance index were investigated, and the bending properties were evaluated by bending tests. The best electrical insulation and bending properties of barrier could be achieved with 4 μm thick SiO x layer prepared by plasma enhanced chemical vapor deposition.

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Dielectric barriers for flexible CIGS solar modules

Cited by 76 publications

References 4 publications

Effect of Metal Barrier Layer for Flexible Solar Cell Devices on Stainless Steel Substrates

Effect of Metal Barrier Layer for Flexible Solar Cell Devices on Stainless Steel Substrates

Chromium thin film deposition on ITO substrate by RF sputtering

Electrical insulation and bending properties of SiOx barrier layers prepared on flexible stainless steel foils by different preparing methods

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