Dielectric Behavior of (1-x)LaAlO<sub>3</sub>–xSrTiO<sub>3</sub> Solid Solution System  at Microwave Frequencies

Sun, Pai-Hsuan; Nakamura, Tetsurō; Shan, Yue Jin; Inaguma, Yoshiyuki; Itoh, Makoto; Kitamura, Toshiki

doi:10.1143/jjap.37.5625

Cited by 77 publications

(46 citation statements)

References 20 publications

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“…A serious complication in measurements of such ultrathin films is the significant contribution of the electrode-oxide interface on the capacitance 28 , which means that the results can only be viewed semi-quantitatively. We observe that the dielectric constants of the LASTO:0.5 and LAO display values in the range of 20 to 30, and are in good agreement with previous reports on ceramic solid-state solutions, where no large enhancement of the relative permittivity was observed for the solid solution up to 80% STO 29 . Measurements of the temperature dependence and the electric-field tunability confirm that LASTO:x behaves like LAO rather than STO.…”

Section: First-principles Calculationssupporting

confidence: 92%

Tunable conductivity threshold at polar oxide interfaces

et al. 2012

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The physical mechanisms responsible for the formation of a two-dimensional electron gas at the interface between insulating srTio 3 and LaAlo 3 have remained a contentious subject since its discovery in 2004. opinion is divided between an intrinsic mechanism involving the build-up of an internal electric potential due to the polar discontinuity at the interface between srTio 3 and LaAlo 3 , and extrinsic mechanisms attributed to structural imperfections. Here we show that interface conductivity is also exhibited when the LaAlo 3 layer is diluted with srTio 3 , and that the threshold thickness required to show conductivity scales inversely with the fraction of LaAlo 3 in this solid solution, and thereby also with the layer's formal polarization. These results can be best described in terms of the intrinsic polar-catastrophe model, hence providing the most compelling evidence, to date, in favour of this mechanism.

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Section: First-principles Calculationssupporting

confidence: 92%

Tunable conductivity threshold at polar oxide interfaces

et al. 2012

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“…Hitherto, several materials with high dielectric constant have been reported and most of them are focused on plural elements system including TiO 2 , such as BaO-Nd 2 O 3 -TiO 2 -Ta 2 O 5 [1,2], BaO-Sm 2 O 3 -TiO 2 [3,4], CaO-Li 2 O-Ln 2 O 3 -TiO 2 [5][6][7][8][9], or (A +1 1/2 A +3 1/2 )TiO 3 system [10]. Among of these materials, compositions with perovskite structure based on (A +1 1/2 A +3 1/2 )TiO 3 system or CaTiO 3 system have superior microwave properties: ε = 81, Q f = 6150 GHz, τ f = +17 ppm/ • C for 0.6(Li 1/2 Sm 1/2 )TiO 3 -0.4(Na 1/2 Sm 1/2 )TiO 3 ceramics [10], ε = 110, Q f = 4500 GHz, τ f = +7 ppm/ • C for CaOSrO-Li 2 O-Ln 2 O 3 -TiO 2 (Ln = Sm, Nd) system [5], ε108,Q f = 17200 GHz in (Ca 1−x Nd 2x/3 )TiO 3 system [11] and 0.67Ca 2/5 Sm 2/5 TiO 3 -0.33Li 1/2 Sm 1/2 TiO 3 ceramics with ε = 95.5, Q f = 7200 GHz, τ f = 0 ppm/ • C [9].…”

Section: Introductionmentioning

confidence: 99%

Dielectric Properties and Sintering Characteristics of CaTiO3-(Li1/2Nd1/2)TiO3 Ceramics

Yang³

2005

J Electroceram

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The dielectric properties and the sintering effect upon microstructure of (1 − x) CaTiO 3 -x(Li 1/2 Nd 1/2 )-TiO 3 Ceramics are investigated in this paper. Nd 3+ and Mg 2+ ions co-substitution for Ca 2+ on A site improves the sintering characteristic of CaTiO 3 ceramics with forming orthorhombic perovskite structure. The structure of (1 − x) CaTiO 3 -x(Li 1/2 Nd 1/2 )TiO 3 changes from orthorhombic to tetragonal as (Li 1/2 Nd 1/2 )TiO 3 addition increasing. Limited solubility of (Li 1/2 Nd 1/2 )TiO 3 in CaTiO 3 forming a part solid solution compound achieves the adjustment of τ ε for CaTiO 3 at low sintering temperature. The proper dielectric properties with ε = 78, tan δ = 0.0006, τ ε = +7 ppm/ • C are obtained for 0.8Ca 0.67 (Nd,Mg) 0.22 TiO 3 -0.2(Li 1/2 Nd 1/2 )TiO 3 ceramics.

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“…The highest Q-value achieved for this system is around 50.000 GHz. Recently, a related system has been reported based on the SrTiO 3 -LaAlO 3 [11] solid solution. It has a permittivity slightly lower than 40 and gives very high Q-values of 60.000 to 70.000 GHz.…”

Section: New Dielectrics With High Q-valuesmentioning

confidence: 99%

Nueva Generación de Materiales LTC

Valant¹,

Suvorov²

2004

Bol. Soc. Esp. Ceram. Vidr.

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To reduce the complexity of LTCC systems and so accelerate the development of LTCC tapes with new functionalities it is necessary to reduce the number of phases within a particular tape. This can best be done by using glass-free single-phase ceramic systems. Such a material system consisting of low-and high-permittivity LTCC materials was developed based on Bi eulytite (permittivity; k'=16) and sillenite (k'=40) compounds and the δ-Bi 2 O 3 solid solution with Nb 2 O 5 (k'=90). The Ge and Si analogues of the sillenites and eulytites, and the 0.75Bi 2 O 3 ⋅0.25Nb 2 O 5 solid solution meet the main requirements for LTCC with respect to their sintering behavior (T s =850-900 o C), their mutual chemical compatibility, their compatibility with a silver electrode as well as their dielectric properties. Keywords: dielectric properties, substrates, capacitors, LTCC, Bi-based compounds Nueva Generación de Materiales LTCPara reducer la complejidad de los sistemas LTCC y así acelerar el desarrollo de láminas de LTCC con nuevas funcionalidades es necesario reducir el número de fases dentro de una determinada lámina. La mejor manera de hacer esto es usar sistemas cerámicos monofásicos libres de fase vítrea. Dicho sistema que consiste en materiales LTCC de baja-y alta-permitividad se ha desarrollado en base a compuestos de Bieulitita (permitividad; k'=16) y silenita (k'=40) y la solución sólida de δ-Bi 2 O 3 con Nb 2 O 5 (k'=90). Los análogos de Ge y Si de las silenitas y eulititas, y la solución sólida 0.75Bi 2 O 3 ⋅0.25Nb 2 O 5 cumplen los principales requerimientos de los LTCC respecto a su comportamiento de sinterización (T s =850-900 o C), su compatibilidad química mutua y su compatibilidad con electrodos de plata, así como en lo concerniente a sus propiedades dieléctricas Palabras clave: propiedades dieléctricas, substratos, condensadores, LTCC, compuestos basados en Bi

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Dielectric Behavior of (1-x)LaAlO₃–xSrTiO₃ Solid Solution System at Microwave Frequencies

Cited by 77 publications

References 20 publications

Tunable conductivity threshold at polar oxide interfaces

Tunable conductivity threshold at polar oxide interfaces

Dielectric Properties and Sintering Characteristics of CaTiO3-(Li1/2Nd1/2)TiO3 Ceramics

Nueva Generación de Materiales LTC

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Dielectric Behavior of (1-x)LaAlO3–xSrTiO3 Solid Solution System at Microwave Frequencies

Cited by 77 publications

References 20 publications

Tunable conductivity threshold at polar oxide interfaces

Tunable conductivity threshold at polar oxide interfaces

Dielectric Properties and Sintering Characteristics of CaTiO3-(Li1/2Nd1/2)TiO3 Ceramics

Nueva Generación de Materiales LTC

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Dielectric Behavior of (1-x)LaAlO₃–xSrTiO₃ Solid Solution System at Microwave Frequencies