The Materials Science beamline at the Swiss Light Source has been operational since 2001. In late 2010, the original wiggler source was replaced with a novel insertion device, which allows unprecedented access to high photon energies from an undulator installed in a medium-energy storage ring. In order to best exploit the increased brilliance of this new source, the entire front-end and optics had to be redesigned. In this work, the upgrade of the beamline is described in detail. The tone is didactic, from which it is hoped the reader can adapt the concepts and ideas to his or her needs.

The physical mechanisms responsible for the formation of a two-dimensional electron gas at the interface between insulating srTio 3 and LaAlo 3 have remained a contentious subject since its discovery in 2004. opinion is divided between an intrinsic mechanism involving the build-up of an internal electric potential due to the polar discontinuity at the interface between srTio 3 and LaAlo 3 , and extrinsic mechanisms attributed to structural imperfections. Here we show that interface conductivity is also exhibited when the LaAlo 3 layer is diluted with srTio 3 , and that the threshold thickness required to show conductivity scales inversely with the fraction of LaAlo 3 in this solid solution, and thereby also with the layer's formal polarization. These results can be best described in terms of the intrinsic polar-catastrophe model, hence providing the most compelling evidence, to date, in favour of this mechanism.

Polarization-controlled synchrotron radiation was used to map the electronic structure of buried conducting interfaces of LaAlO 3 /SrTiO 3 in a resonant angle-resolved photoemission experiment.A strong dependence on the light polarization of the Fermi surface and band dispersions is demonstrated, highlighting the distinct Ti 3d orbitals involved in 2D conduction. Samples with different 2D doping levels were prepared and measured by photoemission, revealing different band occupancies and Fermi surface shapes. A direct comparison between the photoemission measurements and advanced first-principle calculations carried out for different 3d-band fillings is presented in conjunction with the 2D carrier concentration obtained from transport measurements.

The interfaces of LaAlO3/SrTiO3 and (LaAlO3)(x)(SrTiO3)(1-x)/SrTiO3 heterostructures have been investigated by soft x-ray photoelectron spectroscopy for different layer thicknesses across the insulator-to-metal interface transition. The valence band and Fermi edge were probed using resonant photoemission across the Ti L(2,3) absorption edge. The presence of a Fermi-edge signal originating from the partially filled Ti 3d orbitals is only found in the conducting samples. No Fermi-edge signal could be detected for insulating samples below the critical thickness. Furthermore, the angular dependence of the Fermi intensity allows the determination of the spatial extent of the conducting electron density perpendicular to the interface.

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