Interface Fermi States of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>LaAlO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>and Related Heterostructures

Cancellieri, Claudia; Reinle-Schmitt, Mathilde; Kobayashi, Masaki; Strocov, Vladimir N.; Schmitt, Thorsten; Willmott, P. R.; Gariglio, Stefano; Triscone, Jean‐Marc

doi:10.1103/physrevlett.110.137601

Cited by 54 publications

(47 citation statements)

References 29 publications

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“…The intensity is constant as a function of the angle, within the experimental error, suggesting that the relative Ti 3+ content is homogeneously distributed perpendicular to the interface at least on a thickness of the order of the IMFP. This is in agreement with previous estimations from HAXPES (high energy photoemission spectroscopy)19, but differs from other studies22.…”

Section: Resultssupporting

confidence: 91%

“…It was widely employed to investigate LaAlO 3 /SrTiO 3 17181920212223, also resorting to resonant photon probes, where the photon energy is tuned to an absorption threshold, e.g. the Ti L edge which enhances the Ti 3 d emission in the valence band by orders of magnitude.…”

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confidence: 99%

“…20,23. The in-gap states near Fermi energy ( E F ) have been characterized by resonant photoemission spectroscopy (ResPES) up to the full k -resolved Fermi surface mapping for metallic samples2022252829. Also x-ray absorption spectroscopy (XAS) has been used to study the electronic structure at the LaAlO 3 /SrTiO 3 interface, in particular the Ti L edge and its dichroism303132.…”

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confidence: 99%

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Universal electronic structure of polar oxide hetero-interfaces

Treske

Heming

Knupfer

et al. 2015

Sci Rep

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The electronic properties of NdGaO3/SrTiO3, LaGaO3/SrTiO3, and LaAlO3/SrTiO3 interfaces, all showing an insulator-to-metal transition as a function of the overlayer-thickness, are addressed in a comparative study based on x-ray absorption, x-ray photoemission and resonant photoemission spectroscopy. The nature of the charge carriers, their concentration and spatial distribution as well as the interface band alignments and the overall interface band diagrams are studied and quantitatively evaluated. The behavior of the three analyzed heterostructures is found to be remarkably similar. The valence band edge of all the three overlayers aligns to that of bulk SrTiO3. The near-interface SrTiO3 layer is affected, at increasing overlayer thickness, by the building-up of a confining potential. This potential bends both the valence and the conduction band downwards. The latter one crossing the Fermi energy in the proximity of the interface and determines the formation of an interfacial band offset growing as a function of thickness. Quite remarkably, but in agreement with previous reports for LaAlO3/SrTiO3, no electric field is detected inside any of the polar overlayers. The essential phenomenology emerging from our findings is discussed on the base of different alternative scenarios regarding the origin of interface carriers and their interaction with an intense photon beam.

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Section: Resultssupporting

confidence: 91%

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confidence: 99%

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confidence: 99%

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Universal electronic structure of polar oxide hetero-interfaces

Treske

Heming

Knupfer

et al. 2015

Sci Rep

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“…However, recent results of Cancellieri et al 27 , comparing the valence band spectra of 2.5-u.c. and 4-u.c.…”

Section: Introductionmentioning

confidence: 95%

Conducting and insulating LaAlO3/SrTiO3 interfaces: A comparative surface photovoltage investigation

Beyreuther

Paparo

Thiessen

et al. 2013

Journal of Applied Physics

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Surface photovoltage (SPV) spectroscopy, which is a versatile method to analyze the energetic distribution of electronic defect states at surfaces and interfaces of wide-bandgap semiconductor (hetero-)structures, is applied to comparatively investigate heterostructures made of 5-unit-cell-thick LaAlO 3 films grown either on TiO 2 -or on SrO-terminated SrTiO 3 . As shown in a number of experimental and theoretical investigations in the past, these two interfaces exhibit dramatically different properties with the first being conducting and the second insulating.Our present SPV investigation reveals clearly distinguishable interface defect state distributions for both configurations when interpreted within the framework of a classical semiconductor band scheme. Furthermore, bare SrTiO 3 crystals with TiO 2 or mixed SrO/TiO 2 terminations show similar SPV spectra and transients as do LaAlO 3 -covered samples with the respective termination of the SrTiO 3 substrate. This is in accordance with a number of recent works that stress the decisive role of SrTiO 3 and the minor role of LaAlO 3 with respect to the electronic interface properties.

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“…11b). In the presence of OVs, the spectral function exhibits again in-gap weight of strong e g kind around -1.2 eV [86,[97][98][99], but now with a substantial Hubbardband signature. That strong-correlation character might be partly related to the high defect concentration, enforcing nearly exactly d 1 occupation in the interface TiO 2 layer.…”

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confidence: 99%

Influence of oxygen vacancies on two-dimensional electron systems at SrTiO3-based interfaces and surfaces

Sing

Jeschke

Lechermann

et al. 2017

Eur. Phys. J. Spec. Top.

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Abstract. The insulator SrTiO 3 can host high-mobility twodimensional electron systems on its surfaces and at interfaces with other oxides. While for the bare surface a two-dimensional electron system can only be induced by oxygen vacancies, it is believed that the metallicity of heterostructure interfaces as in LaAlO 3/SrTiO3 is caused by other mechanisms related to the polar discontinuity at the interface. Based on calculations using density functional and dynamical mean-field theory as well as on experimental results using photoemission spectroscopy we elucidate the role of oxygen vacancies, thereby highlighting their importance for the electronic and magnetic properties of the systems under study.

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Interface Fermi States ofLaAlO3/SrTiO3and Related Heterostructures

Cited by 54 publications

References 29 publications

Universal electronic structure of polar oxide hetero-interfaces

Universal electronic structure of polar oxide hetero-interfaces

Conducting and insulating LaAlO3/SrTiO3 interfaces: A comparative surface photovoltage investigation

Influence of oxygen vacancies on two-dimensional electron systems at SrTiO3-based interfaces and surfaces

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