Dielectric Characterization and Reliability Methodology

Strong, A.; Wu, Ernest Y.; Vollertsen, R.‐P.; Suñé, J.; Rosa, G. La; Sullivan, Timothy D.; Rauch, S. E.

doi:10.1002/9780470455265.ch2

Cited by 3 publications

(1 citation statement)

References 183 publications

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“…where F(t) is the Weibull distribution, which is considered to be the most appropriate description of the random nature of dielectric breakdown. 16,17,33,34) T 63 is the scale factor for breakdown time at 63.2%. According to the percolation model, 35) the Weibull slope β is equal to, t a , 2 0…”

Section: Resultsmentioning

confidence: 99%

Experimental investigations on ferroelectric dielectric breakdown in sub-10 nm Hf_0.5Zr_0.5O₂ film through comprehensive TDDB characterizations

Li¹,

Wei²,

Wu³

et al. 2022

Jpn. J. Appl. Phys.

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A deep insight is aimed at into the degradation of ferroelectric thin film and, systematical time-dependent dielectric breakdown characterizations in sub-10 nm Hf0.5Zr0.5O2 (HZO) film are performed and analyzed in this work. First, it is found that the anti-ferroelectric t-phase becomes more competitive when the film thickness decreases, and the wake-up effect is related to the phase transition. Second, the experimental phenomenon proves the correlation between soft breakdown and hard breakdown in the thin film, especially at low voltages. Furthermore, it is evident that a larger hard breakdown Weibull slope presents in thinner HZO film, showing the opposite trend to conventional dielectrics such as SiO2. The underlying mechanisms are discussed, and it is concluded that the t-phase interface layer, as well as the pre-existing defects in bulk film, are important factors for thin HZO-based devices.

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Section: Resultsmentioning

confidence: 99%

Experimental investigations on ferroelectric dielectric breakdown in sub-10 nm Hf_0.5Zr_0.5O₂ film through comprehensive TDDB characterizations

Li¹,

Wei²,

Wu³

et al. 2022

Jpn. J. Appl. Phys.

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Research on the Evolution of Defects Initiation and the Diffusion of Dopant on the Si/SiO₂ Interface

Yang,

Chen,

et al. 2024

Adv Materials Inter

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Si/SiO2 interfaces, important parts of Si‐based devices, significantly influence the performance of Si‐based devices. However, owing to the impact of the external environment, related defects are generated, and the dopant can diffuse and redistribute, causing a series of parasitic effects that reduce the lifespan of the devices. In this paper, recent investigations on the mechanisms of interface defect initiation and dopant diffusion are systematically reviewed. At the Si/SiO2 interface, Pb‐type center defects are identified, including Pb, Pb0, and Pb1 center defects. Near the interface, E’ center defects are identified, and H‐related defects are also formed. In addition, dopant ions are introduced in the Si/SiO2 interface to improve the conductivity. However, during the oxidation process, the dopant ions can diffuse and redistribute at the interface. Investigations of the dopant diffusion mechanism, modeling, and dopant pile‐up are reviewed in this paper. Comparisons and discussions of the initial mechanism of defects, structures of defects, and dopant diffusion mechanisms are presented to provide valuable guidance for improving the performance and extending the lifespan of Si/SiO2 interfaces. Finally, an outlook is presented, including improving the models of interface defects to better protect against local strains and multienvironment impacts, and developing 3D detection technology for dopants.

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Long-Term Lifetime Evolution Mechanism of 4H-SiC MOSFETs Under Nitric Oxide Annealing

Zhang,

Yuan,

Guo

et al. 2024

IEEE Trans. Electron Devices

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Dielectric Characterization and Reliability Methodology

Cited by 3 publications

References 183 publications

Experimental investigations on ferroelectric dielectric breakdown in sub-10 nm Hf_0.5Zr_0.5O₂ film through comprehensive TDDB characterizations

Experimental investigations on ferroelectric dielectric breakdown in sub-10 nm Hf_0.5Zr_0.5O₂ film through comprehensive TDDB characterizations

Research on the Evolution of Defects Initiation and the Diffusion of Dopant on the Si/SiO₂ Interface

Long-Term Lifetime Evolution Mechanism of 4H-SiC MOSFETs Under Nitric Oxide Annealing

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Dielectric Characterization and Reliability Methodology

Cited by 3 publications

References 183 publications

Experimental investigations on ferroelectric dielectric breakdown in sub-10 nm Hf0.5Zr0.5O2 film through comprehensive TDDB characterizations

Experimental investigations on ferroelectric dielectric breakdown in sub-10 nm Hf0.5Zr0.5O2 film through comprehensive TDDB characterizations

Research on the Evolution of Defects Initiation and the Diffusion of Dopant on the Si/SiO2 Interface

Long-Term Lifetime Evolution Mechanism of 4H-SiC MOSFETs Under Nitric Oxide Annealing

Contact Info

Product

Resources

About

Experimental investigations on ferroelectric dielectric breakdown in sub-10 nm Hf_0.5Zr_0.5O₂ film through comprehensive TDDB characterizations

Experimental investigations on ferroelectric dielectric breakdown in sub-10 nm Hf_0.5Zr_0.5O₂ film through comprehensive TDDB characterizations

Research on the Evolution of Defects Initiation and the Diffusion of Dopant on the Si/SiO₂ Interface