Dielectric characterization of a ferroelectric film in the sub-GHz region

Bao, Peng; Jackson, Trevor; Lancaster, M.J.

doi:10.1088/0022-3727/41/18/185410

Cited by 12 publications

(10 citation statements)

References 31 publications

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“…is the total thickness of the multilayer structure, E A and E B are theoretical electric fields of layers A and B, respectively. It can be noticed from Eq (4) and 5that the dielectric layers with lower permittivity (BZT thin films in this case)…”

Section: Capacitance (F)mentioning

confidence: 80%

Improved Tunability And Energy Storage Density Properties Of Low Loss, Lead Free (Ba0.50Sr0.50)Tio3 And Ba(Zr0.15Ti0.85)O3 Bilayer Thin Film Stacks

Mahesh

Pal

Prasad

et al. 2021

Preprint

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Multilayer thin films of (Ba0.50Sr0.50)TiO3 (BST) and Ba(Zr0.15Ti0.85)O3 (BZT) were designed and grown using Pulsed LASER Deposition technology. The periodic (BST/BZT)n thin films were deposited on Pt‹111›/SiO2/Si substrates. X-ray diﬀraction reveals the presence of a polycrystalline, perovskite structure corresponding to the bilayer thin film stacks. SEM analysis confirmed the multilayer structure without any interdiffusion across layers. It was also found that the dielectric and ferroelectric properties of the thin films are strongly influenced by the periodic hetero-structures. The thin film stacks exhibit significantly higher tunabilities, comparable with multilayer thin films grown on various single crystal substrates such as LaAlO3, MgO and SrTiO3. Possible mechanisms explaining the other observed attributes such as lower dielectric loss resulting in higher Figure of Merit (FoM), low leakage current are discussed. The effect of incorporating a comparatively lower permittivity thin film in the multilayer stacks is presented. The observed properties of such multilayer structured films help in realization of low loss and highly tunable applications.

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Section: Capacitance (F)mentioning

confidence: 80%

Improved Tunability And Energy Storage Density Properties Of Low Loss, Lead Free (Ba0.50Sr0.50)Tio3 And Ba(Zr0.15Ti0.85)O3 Bilayer Thin Film Stacks

Mahesh

Pal

Prasad

et al. 2021

Preprint

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“…Metal-insulator-metal ͑MIM͒ capacitors are preferred to interdigital capacitors both for varactor devices and test structures, as these have lower operating voltages. Bao et al 15 and Suzuki et al 16 reported the use of one-port reflection measurements of MIM capacitors for characterization of ferroelectric varactors, including short de-embedding structures, but both these are prone to contact resistance or probe dependency problems which have significant impact on measurement errors. 17 According to Cramer et al 18 and Zhu et al, 19 two-port measurement techniques can overcome these limitations, but the configurations they have used have limitations themselves.…”

Section: Design and Simulation Of High Frequency Test Structuresmentioning

confidence: 99%

Growth and high frequency characterization of Mn doped sol-gel PbxSr1−xTiO3 for frequency agile applications

Fragkiadakis

Lüker

Wright

et al. 2009

Journal of Applied Physics

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In pursuit of thin film ferroelectric materials for frequency agile applications that are both easily adapted to large area deposition and also high performance, an investigation has been carried out into sol-gel deposition of 3% Mn doped ͑Pb 0.4 Sr 0.6 ͒TiO 3 . Large area capability has been demonstrated by growth of films with good crystallinity and grain structure on 4 in. Si wafers. Metal-insulator-metal capacitors have also been fabricated and development of an improved de-embedding technique that takes parasitic impedances fully into account has enabled accurate extraction of the high frequency dielectric properties of the Pb x Sr 1−x TiO 3 films. Practically useful values of ϳ 1000, tan ␦ ϳ 0.03, and tunability ϳ50% have been obtained in the low gigahertz range ͑1-5 GHz͒. Peaks in the dielectric loss due to acoustic resonance have been modeled and tentatively identified as due to an electrostrictive effect with an electromechanical coupling coefficient of ϳ0.04 at an electric field of 240 kV/cm which is potentially useful for tunable thin film bulk acoustic wave devices.

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“…It is widely accepted that the control of the film stoichiometry, particular the A/B ratio in the ABO 3 perovskite lattice, is a key challenge for the production of thin films. The control of stoichiometry depends on the deposition method . It has been demonstrated that the BST film composition strongly effects the dielectric properties like tunability and dielectric losses .…”

Section: Introductionmentioning

confidence: 99%

Off‐Stoichiometry of Magnetron Sputtered Ba_1−xSr_xTiO₃ Thin Films

Rachut

Bayer

Wolff

et al. 2019

Physica Status Solidi (b)

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Barium strontium titanate thin films with different Ba/Sr ratios deposited by radio-frequency magnetron sputtering are studied with respect to their composition using in situ X-ray photoelectron spectroscopy. The deposited samples can be described as either titanium-rich or stoichiometric, with cation B/A ratios (i.e., ratios between the Ti and (Ba þ Sr) concentrations) of 1.2-1.6 or 0.7-1.0, respectively. Volume sensitive compositional analysis using transmission electron microscopy shows a non-stoichiometry, which is less pronounced than at the surface. X-ray diffraction only shows cubic perovskite reflections. Together with photoelectron binding energy differences and full widths at half maxima of the Ti 2p and O 1s emissions, this indicates that all films consist of a single phase. The relation between oxygen concentration and B/A ratio further indicates that the deviation of stoichiometry is accommodated by removal or insertion of (Ba,Sr)O. The higher variation of (Ba,Sr)O content near the surface as compared to the bulk may be associated to an increased strain, which is proposed to contribute to surface roughening.

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Dielectric characterization of a ferroelectric film in the sub-GHz region

Cited by 12 publications

References 31 publications

Improved Tunability And Energy Storage Density Properties Of Low Loss, Lead Free (Ba0.50Sr0.50)Tio3 And Ba(Zr0.15Ti0.85)O3 Bilayer Thin Film Stacks

Improved Tunability And Energy Storage Density Properties Of Low Loss, Lead Free (Ba0.50Sr0.50)Tio3 And Ba(Zr0.15Ti0.85)O3 Bilayer Thin Film Stacks

Growth and high frequency characterization of Mn doped sol-gel PbxSr1−xTiO3 for frequency agile applications

Off‐Stoichiometry of Magnetron Sputtered Ba_1−xSr_xTiO₃ Thin Films

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Dielectric characterization of a ferroelectric film in the sub-GHz region

Cited by 12 publications

References 31 publications

Improved Tunability And Energy Storage Density Properties Of Low Loss, Lead Free (Ba0.50Sr0.50)Tio3 And Ba(Zr0.15Ti0.85)O3 Bilayer Thin Film Stacks

Improved Tunability And Energy Storage Density Properties Of Low Loss, Lead Free (Ba0.50Sr0.50)Tio3 And Ba(Zr0.15Ti0.85)O3 Bilayer Thin Film Stacks

Growth and high frequency characterization of Mn doped sol-gel PbxSr1−xTiO3 for frequency agile applications

Off‐Stoichiometry of Magnetron Sputtered Ba1−xSrxTiO3 Thin Films

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Off‐Stoichiometry of Magnetron Sputtered Ba_1−xSr_xTiO₃ Thin Films