1997
DOI: 10.1063/1.365772
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Dielectric characterization of the phase transitions in Pb1−y/2(Zr1−xTix)1−yNbyO3(0.03⩽x⩽0.04, 0.02⩽y⩽0.05)

Abstract: Dielectric characterization of the phase transitions in Pb1-y/2(Zr1-xTix)1-yNbyO3(0.03≤x≤0.04, 0.02≤y≤0.05)

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Cited by 26 publications
(11 citation statements)
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“…9 The character of the phase transition is clearly visible from our polarisation-temperature curves, as shown in the ®gures. Figure 1 shows the P S T curve for X 3Á5% from low temperature (170 K) up to the paraelectric phase.…”
Section: Resultsmentioning
confidence: 79%
“…9 The character of the phase transition is clearly visible from our polarisation-temperature curves, as shown in the ®gures. Figure 1 shows the P S T curve for X 3Á5% from low temperature (170 K) up to the paraelectric phase.…”
Section: Resultsmentioning
confidence: 79%
“…E-mail: jcpeko@yahoo.com/peko@if.sc.usp.br by a monoclinic phase (according to recent literature), with decreasing Ti content. The compositions near this MPB region normally show an increased capability of polarization and electromechanical responses, which make them suitable especially for nonvolatile memory and piezoelectric actuator [1][2][3][4].…”
Section: Introductionmentioning
confidence: 99%
“…[2,5,6]. In the case of Nb-doped PZT materials, it has been stated that substitution of a small amount of Nb 5+ for (Zr,Ti) 4+ increases considerably the bulk resistivity and reduces aging effects, among various effects of relevance [3,[7][8][9][10]. Most electrical characterizations of this Nb-doped PZT system have been, however, conducted mainly on thin films and/or over a restricted range of PZT compositions: the MPB region and the range of Zr-rich PZT compositions (z = 0.03-0.04), the latter falling within the antiferroelectric region of the diagram phase.…”
Section: Introductionmentioning
confidence: 99%
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“…1,2,5 The niobium additive is one of the most used in order to evaluate the dielectric, piezoelectric, pyroelectric and electro-optic properties. [6][7][8] It can be considered as a donor dopant since it substitutes Zr 4+ /Ti 4+ ions, promoting the lead vacancies because of the charge compensation. Some papers have shown several improvements when the niobium doping on the PZT is produced as thin films.…”
Section: Introductionmentioning
confidence: 99%