1960
DOI: 10.1103/physrev.120.1631
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Dielectric Constant and Dielectric Loss of TiO2(Rutile) at Low Frequencies

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Cited by 65 publications
(40 citation statements)
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“…This is a dominant mechanism at low frequencies in low Fe content (54 mole%) samples. Second contribution is due to the separation of free charges existing in the samples, where the charge carriers accumulate at the crystallite surface near the electrodes and impart polarisation to the sample in a manner similar to that reported by Parker and Wasilik [25] in single-crystal rutile samples. This mechanism is thought to be operative in all the samples to different extent.…”
Section: Dielectric Studiesmentioning
confidence: 73%
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“…This is a dominant mechanism at low frequencies in low Fe content (54 mole%) samples. Second contribution is due to the separation of free charges existing in the samples, where the charge carriers accumulate at the crystallite surface near the electrodes and impart polarisation to the sample in a manner similar to that reported by Parker and Wasilik [25] in single-crystal rutile samples. This mechanism is thought to be operative in all the samples to different extent.…”
Section: Dielectric Studiesmentioning
confidence: 73%
“…The numerical value of dielectric loss at frequency 4100 kHz is less than one in all the samples which is further reduced by at least one order of magnitude for higher Fe content samples which are found to be in rutile phase. The reported value of dielectric constant for bulk TiO 2 is 117-166 for anatase phase [24], whereas the rutile phase single-crystal material exhibits anisotropic behaviour with dielectric constant along c-axis as 166 and 89 perpendicular to c-axis [25]. Similar values have been reported for microcrystalline and nanocrystalline materials prepared by spark plasma process [26,27], whereas large variation in the value of "r for thin-film samples has been reported (from 60 to 1) [28,29].…”
Section: Dielectric Studiesmentioning
confidence: 99%
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“…13,14 However, TiO 2 thin films grown by both physical vapor deposition and chemical vapor deposition usually have anatase or amorphous structures, which only have a moderately high dielectric constant ͑ ϳ 20-40͒. 15 High temperature annealing ͑above 700°C͒ is necessary to transform them to the rutile phase, which requires high thermal budgets and causes structural integrity problems.…”
mentioning
confidence: 99%
“…Grant [7] quotes values for the static dielectric constant at room temperature of 173 in the c -direction and 89 perpendicular to the c -direction, compared with the optical value of ∼7. Dielectric constant and dielectric loss of TiO 2 (rutile) at low frequencies was also calculated by Parker and Wasilik [8] where as dielectric relaxational behaviour was observed by Dominik and Mac Crone [9] in reduced rutile. Those studies mainly deal with the measurement of dielectric constant for low and high frequency at room temperature or below the room temperature.…”
Section: Introductionmentioning
confidence: 99%