Dielectric constant of CuInSe2 by capacitance measurements

Li, P.W.; Anderson, Robert A.; Plovnick, R.H.

doi:10.1016/0022-3697(79)90113-6

Cited by 60 publications

(29 citation statements)

References 12 publications

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“…For the CIGSe device shown in Fig. 2, assuming a relative dielectric permittivity of ε r = 13.6 [9], this would yield a dopant concentration of (2-6) × 10 15 cm −3 , which is at least one order of magnitude lower than the value of (8 ± 3) × 10 16 cm −3 obtained by Hall analysis in Section 3.1. Such a striking disagreement might be related to the complex structure of the different layers in a thin film solar cell.…”

Section: Capacitance-voltage Analysismentioning

confidence: 77%

What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se 2 ?

et al. 2017

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We compare the dopant concentration of polycrystalline Cu(In,Ga)Se 2 thin film absorbers derived from Hall and capacitance-voltage measurements. Although both measurements techniques appear to be reliable, dopant concentrations determined by capacitance-voltage analysis are significantly lower and vary with probing depth into the absorber. The doping profiles and differences between both measurement techniques are consistent with Cd in-diffusion from the CdS buffer layer during solar cell fabrication. Different doping profiles obtained after a variation of the CdS deposition process support this scenario.

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Section: Capacitance-voltage Analysismentioning

confidence: 77%

What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se 2 ?

et al. 2017

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“…Our values are in good agreement with experimental values of 11.3 [26] and 13.6. [27] The potential alignment term of the FNV correction is determined along the c-direction and thus a static dielectric constant of 11.15 is used.…”

Section: Methodsmentioning

confidence: 99%

First‐Principles Modeling of Point Defects and Complexes in Thin‐Film Solar‐Cell Absorber CuInSe₂

Malitckaya

Komsa

Havu

et al. 2017

Adv Elect Materials

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as the composition of the sample changes from Cu-rich to Cu-poor, so that in the Cupoor samples only one peak is detected. Although only the Cu-poor material is important for actual devices Cu-rich samples give indispensable information for defect identification.First-principles calculations based on the density functional theory (DFT) can be used to obtain important, complementary information about point defects such as formation energies and charge transition levels. [6] A plethora of studies concerning defects in CuInSe 2 and CuGaSe 2 has been published over the last two decades. [7][8][9][10][11][12][13] The most recent DFT investigations have employed hybrid functionals, which can overcome the energy band gap problem plaguing the older studies and can thus also provide information about the defect level positions within the band gap. [9][10][11][12][13] The results of different calculations agree well with respect to general trends in formation energies of the most important defects, such as the copper vacancy (V Cu ), indium antisite on copper place (In Cu ), and copper interstitial (Cu int ). However, the results differ in some important cases. For instance, there are clearly different values for the ionization levels within the band gap for the copper antisite on the indium place (Cu In ) and indium vacancy (V In ). Based on the formation energy calculations, V Cu and Cu In are abundant acceptors, and are most probably responsible for some of the above-mentioned PL peaks, but it is unclear whether any native defect can be responsible for the third acceptor level.One important goal of the present work was to gain a perspective on the present unsatisfactory situation in modeling point defects in CIGSe and to approach the ultimate accuracy by which DFT is able to predict the properties of bulk crystalline materials. [14] First we carried out a detailed benchmarking of the first-principles computational scheme used. We checked effects due to the supercell size and shape, as well as those of the finite-size supercell correction scheme. We used also two very different implementations of the first-principles DFT method, which differ in describing valence-core electron interaction and electron wave functions (see below). After finding the computational parameters yielding accurate results, we calculated formation energies and charge transition levels for different acceptor candidates in CuInSe 2 . By carefully considering the relevant chemical potential limits, we were able to draw conclusions about the abundances of different defects. In addition to simple native defects, we have also considered a set of complexes formed by them. Our paper is organized as follows.

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“…The reduced masses μ, binding energy Ry* and Bohr radius a B for both the A and B excitons, calculated assuming that both excitons are isotropic and hydrogen-like, are shown in Table 1. The calculations were carried out for the dielectric constant in CuInSe 2 ε = 13.6 [15].…”

Section: Resultsmentioning

confidence: 99%

Effects of magnetic fields on free excitons in CuInSe₂

Yakushev¹,

Martin

Babiński

et al. 2009

Phys. Status Solidi (c)

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The effects of magnetic fields up to 20 T were studied in CuInSe2 single crystals using photoluminescence (PL) at 4.2 K. Diamagnetic shifts of the free A and B excitons measured in the PL spectra in CuInSe2 at 4.2 K tinder the magnetic fields were used to estimate the reduced masses (0.095m(0) for the A and 0.098m(0) for the B exciton), binding energies (7.0 meV for the A and 7.2 meV for the B exciton) and Bohr radii (7.6 nm for the A and 7.3 nm for the B exciton) of the free-excitons in CuInSe2 assuming that both excitons are isotropic and hydrogen-like. (C) 2009 WILEY-VCH Verlag GmbH Co. KGaA, Weinhei

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Dielectric constant of CuInSe2 by capacitance measurements

Cited by 60 publications

References 12 publications

What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se 2 ?

What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se 2 ?

First‐Principles Modeling of Point Defects and Complexes in Thin‐Film Solar‐Cell Absorber CuInSe₂

Effects of magnetic fields on free excitons in CuInSe₂

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Dielectric constant of CuInSe2 by capacitance measurements

Cited by 60 publications

References 12 publications

What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se 2 ?

What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se 2 ?

First‐Principles Modeling of Point Defects and Complexes in Thin‐Film Solar‐Cell Absorber CuInSe2

Effects of magnetic fields on free excitons in CuInSe2

Contact Info

Product

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First‐Principles Modeling of Point Defects and Complexes in Thin‐Film Solar‐Cell Absorber CuInSe₂

Effects of magnetic fields on free excitons in CuInSe₂