Dielectric Engineered Tunnel Field-Effect Transistor

Ilatikhameneh, Hesameddin; Ameen, Tarek A.; Klimeck, Gerhard; Appenzeller, Joerg; Rahman, Rajib

doi:10.1109/led.2015.2474147

Cited by 84 publications

(61 citation statements)

References 14 publications

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“…The green line in Figure c presents the device performance for an optimal design, with the best electrostatics control introduced by a spacer with low dielectric constant (air gap = 2 nm) coupled with a higher quality gate dielectric (ε r = 25) with the thickness of 3 nm HfO 2 as the gate dielectric to maximize the electric field at the tunneling junction, which can significantly increase the BTBT transmission. This enhancement will allow the TFET device to achieve I on of ≈30 µA µm −1 and SS ≈ 23 mV dec −1 . Detailed design parameters are described in Section SVII (Supporting Information).…”

Section: Resultsmentioning

confidence: 76%

WSe₂ Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing

Pang

Chen

Ameen

et al. 2019

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In this paper, electrostatically configurable 2D tungsten diselenide (WSe2) electronic devices are demonstrated. Utilizing a novel triple‐gate design, a WSe2 device is able to operate as a tunneling field‐effect transistor (TFET), a metal–oxide–semiconductor field‐effect transistor (MOSFET) as well as a diode, by electrostatically tuning the channel doping to the desired profile. The implementation of scaled gate dielectric and gate electrode spacing enables higher band‐to‐band tunneling transmission with the best observed subthreshold swing (SS) among all reported homojunction TFETs on 2D materials. Self‐consistent full‐band atomistic quantum transport simulations quantitatively agree with electrical measurements of both the MOSFET and TFET and suggest that scaling gate oxide below 3 nm is necessary to achieve sub‐60 mV dec−1 SS, while further improvement can be obtained by optimizing the spacers. Diode operation is also demonstrated with the best ideality factor of 1.5, owing to the enhanced electrostatic control compared to previous reports. This research sheds light on the potential of utilizing electrostatic doping scheme for low‐power electronics and opens a path toward novel designs of field programmable mixed analog/digital circuitry for reconfigurable computing.

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Section: Resultsmentioning

confidence: 76%

WSe₂ Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing

Pang

Chen

Ameen

et al. 2019

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“…[7,133,137] The engineering is realized through a low-k dielectric sandwich by two high-k ones (Figure 9b). Similarly, it can also be improved by multidielectrics.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…Therefore, it is a quantum-mechanical behavior essentially. [103,135,137] www.advelectronicmat.de as the Schrodinger-Poisson solver. Electron.…”

Section: Quantum Transport Modeling Toward Tfetsmentioning

confidence: 99%

Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors

Qin

Wang

et al. 2018

Adv Elect Materials

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Since the continuous scaling down of the transistor channel length, extraordinary improvement is achieved in the switching speed. However, the rising leakage current degrades the power consumption seriously. In this regard, reducing supply voltage might be the most effective method. This requirement can be fulfilled well by tunnel field‐effect transistors (TFETs), because carriers transport via a band‐to‐band tunneling manner in the TFETs. Relying on the special transport mechanism, the TFETs often require band structure modulations and steep interfaces without trap state, which are challenging for bulk materials. Therefore, these challenges have boosted TFET designs based on low‐dimensional materials ranging from Si/Ge nanowires to state‐of‐art van der Waals heterostructures. Here, the key concepts of the currently developed TFETs are studied from the aspects of structure, material, transportation characteristic, and mechanism. According to the heterojunction bonding types, they can be divided into lateral and vertical TFETs in general. Furthermore, other related transistors based on tunneling are also included. Emerging problems and promotion methods toward these TFETs are introduced with the assistance of simulations. The main goal is to introduce the frontiers of TFET explorations and provide readers with a perspective on how to realize TFET applications in the future.

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“…Such B2B tunneling is much more sensitive to material/device parameters such as energy bandgap (E G ), dielectric thickness (t ox ), dielectric constant of the gate material (k), and effective mass of charge carriers (m * ), according to Eq. 1 [1,5,7,10]:…”

Section: Simulation Setupmentioning

confidence: 99%

“…To overcome this challenge of low ON-current (I ON ), various approaches have been used to improve the electric field inside the tunneling region and reducing the effective tunneling bandgap [7][8][9][10][11][12][13]. However, lowering the bandgap increases I OFF and limits the power supply scaling V DD according to E G ≥ qV DD [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Heterogate junctionless tunnel field-effect transistor: future of low-power devices

2016

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Gate dielectric materials play a key role in device development and study for various applications. We illustrate herein the impact of hetero (high-k/low-k) gate dielectric materials on the ON-current (I ON ) and OFF-current (I OFF ) of the heterogate junctionless tunnel field-effect transistor (FET). The heterogate concept enables a wide range of gate materials for device study. This concept is derived from the well-known continuity of the displacement vector at the interface between low-and high-k gate dielectric materials. Application of high-k gate dielectric material improves the internal electric field in the device, resulting in lower tunneling width with high I ON and low I OFF current. The impact of work function variations and doping on device performance is also comprehensively investigated.

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Dielectric Engineered Tunnel Field-Effect Transistor

Cited by 84 publications

References 14 publications

WSe₂ Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing

WSe₂ Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing

Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors

Heterogate junctionless tunnel field-effect transistor: future of low-power devices

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Dielectric Engineered Tunnel Field-Effect Transistor

Cited by 84 publications

References 14 publications

WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing

WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing

Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors

Heterogate junctionless tunnel field-effect transistor: future of low-power devices

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WSe₂ Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing

WSe₂ Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing