Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High‐Performance 2D Field Effect Transistors

Zou, Xuming; Huang, Chun Wei; Wang, Lifeng; Yin, Long-Jing; Li, Wenqing; Wang, Jingli; Wu, Bin; Liu, Yunqi; Yao, Qian; Jiang, Changzhong; Wu, Wen‐Wei; He, Lin; Chen, Shanshan; Ho, Johnny C.; Liao, Lei

doi:10.1002/adma.201505205

Cited by 77 publications

(49 citation statements)

References 53 publications

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“…Thus, other 2D layered materials (2DLMs) with varying bandgaps including semimetals (such as WTe 2 ), topological insulators (such as Pb 1− x Sn x Te, Bi 2 Te 3 ), semiconductors (such as black phosphorous (BP), MoS 2 , WS 2 , WSe 2 ), insulators (such as boron nitride (BN)). Different from gapless graphene, these 2DLMs possess bandgaps in a wide range and can also be modulated with the changing thickness, which have triggered tremendous interest in many fields such as field effect transistors, photodetectors, flexible devices …”

Section: Introductionmentioning

confidence: 99%

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

Zhou

Jing

et al. 2018

Adv Funct Materials

338

217

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Van der Waals heterostructures (vdWHs) based on 2D layered materials with selectable materials properties pave the way to integration at the atomic scale, which may give rise to fresh heterostructures exhibiting absolutely novel physics and versatility. This feature article reviews the state-of-the-art research activities that focus on the 2D vdWHs and their optoelectronic applications. First, the preparation methods such as mechanical transfer and chemical vapor deposition growth are comprehensively outlined. Then, unique energy band alignments generated in 2D vdWHs are introduced. Furthermore, this feature article focuses on the applications in light-emitting diodes, photodetectors, and optical modulators based on 2D vdWHs with novel constructions and mechanisms. The recently reported novel constructions of the devices are introduced in three primary aspects: light-emitting diodes (such as single defect light-emitting diodes, circularly polarized light emission arising from valley polarization), photodetectors (such as photo-thermionic, tunneling, electrolyte-gated, and broadband photodetectors), and optical modulators (such as graphene integrated with silicon technology and graphene/hexagonal boron nitride (hBN) heterostructure), which show promising applications in the nextgeneration optoelectronics. Finally, the article provides some conclusions and an outlook on the future development in the field.WSe 2 /MoS 2 along the [001] zone axis in Figure 1c demonstrates that in this specific hetero-bilayer structure, the two hexagonal reciprocal lattices are rotated by 12.5° with respect to each layer without obvious lattice strain, resulting in moiré fringes with a spatial periodicity on the order of four to six times the lattice constants of each layer. [76] The atomically sharp interface of the heterostructure can be obtained by this stacking process confirmed by the high-resolution cross-sectional scanning transmission electron microscope image of the heterostructure (Figure 1d). Furthermore, the complex 2D vdWHs with more stacking layers can be realized by this mechanical transfer process.Mechanical transfer process provides a lot of flexibility in constructing diverse 2D vdWHs with various materials which may give rise to fresh physical properties, it is not scalable, which is imperative for further practical applications in electronics and optoelectronics. Alternatively, the bottom-up method such as direct CVD synthesis of 2D vdWHs has been successful in synthesizing graphene-or transition metal dichalcogenide (TMD)-based vdWHs, [77][78][79] which shows promising applications in scalable production. CVD GrowthCVD growth has shown booming development in the last decades such as the CVD growth of graphene [80,81] and TMDs, [82,83] and has been employed for synthesizing 2D vdWHs recently. [84] The most used method for CVD growth of 2D vdWHs is that evaporating the target sources such as WS 2 , WSe 2 , MoS 2 , MoSe 2 . Xu and co-workers [65] employed the mixture of WSe 2 and MoSe 2 powder as sources and obtained ...

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Section: Introductionmentioning

confidence: 99%

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

Zhou

Jing

et al. 2018

Adv Funct Materials

338

217

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“…Field‐effect transistors (FETs) have been integrated into various electronic devices to achieve high‐speed and energy‐efficient switching . Typically, a high‐performance FET requires a semiconducting channel with high carrier mobility, reliable electrostatic control, and negligible contact resistance . As the FETs scaling into sub‐10 nm body thickness range, traditional bulk semiconductor materials, such as silicon and the III–V semiconductors, suffer from severe mobility degradation due to surface scattering and quantum confinement .…”

Section: Introductionmentioning

confidence: 99%

Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field‐Effect Transistors

Jiang

Zou

et al. 2018

Adv Funct Materials

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Metal/semiconductor contact is a significant constraint in short-channel field effect transistors (FETs) comprising black phosphorus (BP) and other 2D semiconductors. Due to the pinning effect at metal/2D semiconductor interface, the Schottky barrier usually does not follow the Schottky-Mott rule, resulting in thickness-dependent FET performance. In this work, the Schottky barrier in BP FETs is investigated via theory calculation and electrical measurement. A simple metal/BP contact model is presented based upon thickness-dependent electrical characteristics of BP FETs. The model considers the Schottky barrier as a combined effect of the Schottky-Mott rule and the pinning effect and provides a feasibility to track the conducting behavior of other 2D semiconductor FETs.

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“…For ultrathin CVD h‐BN within 0.6 nm, the reduced insulator thickness makes electrons easier for direct tunneling . Moreover, the CVD h‐BN contains more defects than exfoliated h‐BN, which also plays an important role in tunneling transport (Figure S4, Supporting Information) …”

mentioning

confidence: 99%

“…After introducing a h‐BN layer, the peak mobility without contact resistance increased a little. The h‐BN act not only as a tunneling layer but also as an encapsulate layer to get rid of the influence of atmosphere and interfacial charge impurities scattering, thus can improve the channel conductance . With 1–2 layers h‐BN, the channel conductance without contact resistance is improved from 18.4 to 15.3 kΩ·μm.…”

mentioning

confidence: 99%

High Mobility MoS₂ Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer

et al. 2016

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Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High‐Performance 2D Field Effect Transistors

Cited by 77 publications

References 53 publications

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field‐Effect Transistors

High Mobility MoS₂ Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer

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Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High‐Performance 2D Field Effect Transistors

Cited by 77 publications

References 53 publications

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field‐Effect Transistors

High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer

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High Mobility MoS₂ Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer