Dielectric, Ferroelectric and Piezoelectric Properties of the Lead Free 0.9BaTiO₃-(0.1-x)Bi_0.5Na_0.5TiO₃-xBi(Mg_0.5Ti_0.5)O₃Solid Solution

Excellent Energy-Storage Properties Achieved in BaTiO3-Based Lead-Free Relaxor Ferroelectric Ceramics via Domain Engineering on the Nanoscale

“…It may be due to the fact that the dopant hinders the grain boundary motion and reduces the interface energy during sintering, which inhibits the grain growth. Moreover, the results are consistent with the reports of recent literatures such as KNN-BMN, BNT-BKT-BT, and BT-BNT-BMT . The refined grain sizes and enhanced BDS are in favor of high-energy-storage properties. ,− The date of BDS of (1 – x )­BT- x KBN ceramics are depicted in Figure S3 through the linear fitting, and all of the data points are in good agreement with the Weibull distribution and the β values are greater than 17.…”

Lead-free Bi(Mg0.5Ti0.5)O3-modified 0.875Bi0.5Na0.5TiO3-0.125BaTiO3 ferroelectric ceramics with tetragonal structure and large field-induced strains

“…[31][32][33][34][35][36][37] Fig. 9 summarizes the composition dependence of the bipolar strain S max , negative strain S neg and electrostrictive coefficient Q 33 , and illustrates the dependence of the ferroelectric states on composition.…”

Structural Evolution and Enhanced Energy Density, Ferroelectric Property Investigation in Gd Substituted NBT – BT Lead Free Ferroelectric Ceramics

“…In recent literature, the bands observed at high frequencies near at (757 and 861 cm -1 ) are ascribed to diffusion of oxygen vacancies or monotonic increase in its intensity to vacancy concentration. Most of these bands noted in pure and NBT-BT solid solutions indicate the Bismuth volatility during sintering [33]. The presence of such an unexpected high frequency band is observed in some rare earth doped perovskites by Mineshige et.…”

“…It can be elucidated that the long-range dipolar interaction is associated with dislocation by the dopant ions. Subsequently local isolated polar nano regions (PNRs) are formed from the composition fluctuation and charge difference [33,35]. The substitution of Gd in NBT -BT triggers the reduction of coercivity which suited for easy switching of NBT based devices.…”