Dielectric function in the NIR-VUV spectral range of (InxGa1−x)2O3 thin films

Abstract

Articles you may be interested inTemperature dependence of the dielectric function in the spectral range (0.5-8.5) eV of an In2O3 thin film

Dielectric function in the spectral range (0.5–8.5)eV of an (Alx Ga1−x)2O3 thin film with continuous composition spread

“…Please note that, similar to our investigations on (In x Ga 1Àx ) 2 O 3 thin films reported earlier, 12 we have determined the effective isotropic dielectric function 37 of this ternary alloy of optically biaxial and uniaxial binary materials. This was necessary because we have no access to the individual dielectric tensor components due to rotation domains and twinning of the crystallites and the occurrence of the different crystal structure phases in the thin films.…”

“…From that, we conclude that the crystal quality in general is not strongly affected by Al incorporation, differently to In. 12 This may be related to the covalent radius of Al being similar to that of Ga, resulting in only a small variation of the lattice parameters with the composition, particularly as compared to (In x Ga 1Àx ) 2 O 3 . 32,40 Much more pronounced than in the (In x Ga 1Àx ) 2 O 3 alloy system, the overall spectral weight of the electronic band-band transitions decreases considerably with the increase in Al incorporation in the spectral range investigated here.…”

“…12 We use an exponential onset of the absorption due to the disorder in the atomic site occupation in the ternary crystal and/or weak absorption caused by symmetry forbidden transitions or an indirect band gap. The appropriate MDF is the Tauc-Lorentz model, 41 which usually reads for e 2 (e 1 follows from the Kramers-Kronig transformation)…”

“…12, the electronic and optical properties in the near-infrared to vacuum-ultraviolet spectral range of different polymorphs of Ga 2 O 3 have been thoroughly studied theoretically [13][14][15][16] but less comprehensively by experiment. [17][18][19][20] For Al 2 O 3 , more reports on theoretical and experimental work are available because its long term use as substrate material and insulating dielectric (for example Refs.…”

Comparative study of optical and magneto‐optical properties of normal, disordered, and inverse spinel‐type oxides

“…The dielectric function (DF), , of the thin films was determined by means of spectroscopic ellipsometry in a wide spectral range from 0.5 to 8.5 eV at room temperature using a J. A. Woollam Co. Inc. VUV‐VASE spectroscopic ellipsometer at angles of incidence of 60 and 70 . For the isotropic case, the measured quantities and are defined by the ratio of the complex reflection coefficients and .…”