Dielectric functions and optical parameters of heavily doped and/or highly excited Si:P

Basta, M.; Kuznicki, Z.T.

doi:10.1117/12.856308

Cited by 5 publications

(3 citation statements)

References 72 publications

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“…The simulation results agree well and reproduce the decreasing trend of the experimental SERS intensities. The slight overestimation of simulated enhancements could be due to differences between actual and modeled parameters such as the dielectric function of the heteronanojunction components including the molecular probe or the SiO 2 and Si. − …”

mentioning

confidence: 99%

Single Nanoparticle-Based Heteronanojunction as a Plasmon Ruler for Measuring Dielectric Thin Films

Hutter

et al. 2015

J. Phys. Chem. Lett.

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Nondestructive, noninvasive and accurate measurement of thin film thicknesses on dielectric substrates is challenging. In this work a ruler for measuring thin film thicknesses utilizes the heteronanojunction construct formed between a plasmonic nanoparticle and a high refractive index nonplasmonic substrate. The high near-field sensitivity in the nanojunction renders it suitable for measuring the thickness of intervening dielectric thin films. We demonstrate this by controlling the thickness of dielectric spacer layers created by overgrowing SiO2 thin films on commercially available silicon substrates. While Rayleigh (using dark-field) scattering measurements show that the spectral response is well correlated to the thickness of SiO2 spacer layers the distance-dependence is much steeper with surface-enhanced Raman scattering (SERS). Good agreement between 3D simulations and experimental results confirm the plasmon ruler construct’s sensitivity to the dielectric thin film spacing. Thus, we postulate that this single nanoparticle based heteronanojunction configuration can serve as a convenient and simple ruler in metrology of thin films as well as a platform for SERS-based detection even in cases where plasmonically active films are not a suitable substrate.

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mentioning

confidence: 99%

Single Nanoparticle-Based Heteronanojunction as a Plasmon Ruler for Measuring Dielectric Thin Films

Hutter

et al. 2015

J. Phys. Chem. Lett.

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“…3). On the other hand, according to Basta's model, 28) the effect of dopant concentration on interband transitions is negligible in lightly doped c-Si (N N , 10…”

Section: Numerical Model Of Complex Permittivity Of C-simentioning

confidence: 99%

Numerical calculation of thermoreflectance coefficient of c-Si for wavelengths of 200–800 nm and temperatures of 300–500 K

Shimofuri,

Murakami,

Miyake

et al. 2023

Jpn. J. Appl. Phys.

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In this paper, the thermoreflectance (TR) coefficient of c-Si is numerically calculated over the wavelength range of 200–800 nm and the temperature range of 300–500 K using a complex permittivity model that considers interband transitions and free carriers. The calculated results are in good agreement with literature values, and it is found that the temperature dependence of the TR coefficient is almost negligible at wavelengths above 500 nm. On the other hand, in the wavelength range of 200–500 nm, the TR coefficient depends strongly on the wavelength, and the temperature stability also changes significantly depending on the wavelength. This suggests that the wavelength of the probe light for TR measurement should be appropriately selected to realize high sensitivity and temperature stability, considering the constraints of the optical system and the temperature range of the sample.

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“…A set of model optical functions of the heavily doped Si:P was used in the TMA to simulate field propagation and electromagnetic optical response. The dielectric function, presented in our previous paper [18] combines oscillation functions and a dense free-carrier gas (Lorentz-Drude approach) and…”

Section: Introductionmentioning

confidence: 99%

Electromagnetic propagation in multilayered nanomodified heavily doped Si:P systems

Kuznicki¹,

Basta²

2010

SPIE Proceedings

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Investigation of some light-matter interactions in Multi-Interface Novel Devices (MIND)containing a nanoscale Si-layered system have led to a method for predicting free-carrier density dependent nonlinear optical properties as a function of doping, light excitation intensity and carrier injection. The approach is based on the well-known t-matrix approximation. A simplified a few-layer optical model has been constructed that will reproduce the main features/parameters of real systems. The degree of model and simulation self-consistency is discussed using basic physical functions and published experimental data.Near perfect agreement between the simulated model and the corresponding experimental results has been obtained. In this way, the simulation allowed us to determine the main origins/components of the strong optical nonlinearity characteristic of one of the most specific MIND behaviours.

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Dielectric functions and optical parameters of heavily doped and/or highly excited Si:P

Cited by 5 publications

References 72 publications

Single Nanoparticle-Based Heteronanojunction as a Plasmon Ruler for Measuring Dielectric Thin Films

Single Nanoparticle-Based Heteronanojunction as a Plasmon Ruler for Measuring Dielectric Thin Films

Numerical calculation of thermoreflectance coefficient of c-Si for wavelengths of 200–800 nm and temperatures of 300–500 K

Electromagnetic propagation in multilayered nanomodified heavily doped Si:P systems

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