Dielectric Materials

Gupta, T. K.

doi:10.1007/978-1-4419-0076-0_2

Cited by 13 publications

(9 citation statements)

References 102 publications

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“…Often, κ is reported for static fields, though most electronics actually operate in the high-frequency regime (>GHz). 27 While high-κ dielectrics help to prevent significant leakage current when scaling down FETs, they tend to also have lower switching speeds than low-κ materials. Additionally, since ac power dissipation is proportional to capacitance, low-κ dielectrics may be desired to reduce power consumption.…”

Section: Biodegradable Polymeric Components For Organic Electronicsmentioning

confidence: 99%

“…Additionally, since ac power dissipation is proportional to capacitance, low-κ dielectrics may be desired to reduce power consumption. 27 There are a wide variety of biodegradable materials and engineering methods available to prepare dielectric materials with tailored properties for particular applications.…”

Section: Biodegradable Polymeric Components For Organic Electronicsmentioning

confidence: 99%

“…κ depends on the number of polarizable groups in a material, and has a frequency dependence in an oscillating electric field attributed to the time dependency of polarization mechanisms. Often, κ is reported for static fields, though most electronics actually operate in the high-frequency regime (>GHz) . While high-κ dielectrics help to prevent significant leakage current when scaling down FETs, they tend to also have lower switching speeds than low-κ materials.…”

Section: Biodegradable Polymeric Components For Organic Electronicsmentioning

confidence: 99%

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Biodegradable Polymeric Materials in Degradable Electronic Devices

2018

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Biodegradable electronics have great potential to reduce the environmental footprint of devices and enable advanced health monitoring and therapeutic technologies. Complex biodegradable electronics require biodegradable substrates, insulators, conductors, and semiconductors, all of which comprise the fundamental building blocks of devices. This review will survey recent trends in the strategies used to fabricate biodegradable forms of each of these components. Polymers that can disintegrate without full chemical breakdown (type I), as well as those that can be recycled into monomeric and oligomeric building blocks (type II), will be discussed. Type I degradation is typically achieved with engineering and material science based strategies, whereas type II degradation often requires deliberate synthetic approaches. Notably, unconventional degradable linkages capable of maintaining long-range conjugation have been relatively unexplored, yet may enable fully biodegradable conductors and semiconductors with uncompromised electrical properties. While substantial progress has been made in developing degradable device components, the electrical and mechanical properties of these materials must be improved before fully degradable complex electronics can be realized.

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Section: Biodegradable Polymeric Components For Organic Electronicsmentioning

confidence: 99%

Section: Biodegradable Polymeric Components For Organic Electronicsmentioning

confidence: 99%

Section: Biodegradable Polymeric Components For Organic Electronicsmentioning

confidence: 99%

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Biodegradable Polymeric Materials in Degradable Electronic Devices

2018

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“…3J). A low k dielectric material (e.g., Aromatic thermosets, Teflon AF [19]) can be used to make sure interlayer coupling noises are less. For planarization, standard techniques such as chemical mechanical polishing can be used.…”

Section: N 3 Asic Fabric Overviewmentioning

confidence: 99%

Experimental prototyping of beyond-CMOS nanowire computing fabrics

Rahman

Narayanan

Khasanvis

et al. 2013

2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)

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Nanoscale 3D-integrated Application Specific ICs (N 3 ASICs) [1], a computing fabric based on semiconductor nanowire grids, is targeted as a scalable alternative to end-of-theline CMOS. In contrast to device-centric approaches like CMOS, N 3 ASIC design choices across device, circuit and architecture levels are geared towards reducing manufacturing requirements while focusing on overall benefits. In this fabric, regular arrays with limited customization imply mitigated overlay precision requirements, novel circuit styles with single-type cross-nanowire FETs eliminate the need for arbitrary fine-grain sizing, doping and routing. In addition, junctionless transistors eliminate the need for stringent control of doping profiles. In this paper, we present theoretical and experimental progress towards realizing a functional N 3 ASIC prototype with junctionless transistors as active cross-point devices. We first validate this device concept through detailed 3D device simulations. We then present a manufacturing pathway as well as show experimental results demonstrating a proof-of-concept metal-gated junctionless nanowire device and N 3 ASIC tile structure with sub-30nm nanowires.

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“…The thermal stability of the high-k dielectric material is also of importance, thus, a dielectric material should show good thermal stability, at least at the processing temperatures of the device, and have a low coefficient of thermal expansion. 4,8,9 In order to carry out diffusion studies, we use tin (Sn), a highly mobile metallic probe atom, to test if Sc 2 O 3 layers of various thicknesses act as a diffusion barrier. Although Sn is not relevant for high-k dielectric applications we used it due to the fact that Sn has the advantage of forming a volatile hydride, which allows it to be removed from surfaces with hydrogen reactive species.…”

Section: Introductionmentioning

confidence: 99%