Dielectric particle lofting from dielectric substrate exposed to low-energy electron beam

Krainov, P. V.; Ivanov, V. V.; Astakhov, Dmitry; Kerkhof, Mark van de; Kvon, Vladimir; Medvedev, V. V.; Yakunin, A. M.

doi:10.1088/1361-6595/aba58b

Cited by 9 publications

(4 citation statements)

References 24 publications

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“…For the ruthenium (Ru) mirror cap layer, the secondary electron yield (SEY) has been measured to be 2%, with an electron energy spectrum dominated by low-energy electrons, 39 which may reasonably be approximated by a Maxwellian distribution with T e ≈ 3 eV. 40 For the example of the RME, conservatively estimating the reticle SEY to be 2% and taking a photon flux of 10 21 s −1 • m −2 , the secondary electron current density may be estimated to be ∼2 • 10 19 s −1 • m −2 (or ∼3 A∕m 2 ), which is larger than the gas ionization contribution. In practice, this current is be self-limiting by formation of an instantaneous negative space charge layer next to the surface that traps the low-energy electrons and returns these to the surface.…”

Section: Photoelectric Effectmentioning

confidence: 99%

“…For metals the electron quantum yield is typically in order of a few percent for EUV photons. For the ruthenium (Ru) mirror caplayer the secondary electron yield (SEY) has been measured to be 2%, with an electron energy spectrum dominated by low-energy electrons 38 , which may reasonably be approximated by a Maxwellian distribution with 𝑇 𝑒 ≈3 eV 39 .…”

Section: Photoelectric Effectmentioning

confidence: 99%

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EUV-induced hydrogen plasma: pulsed mode operation and confinement in scanner

Kerkhof

Yakunin

Astakhov

et al. 2021

J. Micro/Nanopattern. Mats. Metro.

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In recent years, EUV lithography scanner systems have entered high-volume manufacturing for state-of-the-art integrated circuits, with critical dimensions down to 10 nm. This technology uses 13.5-nm EUV radiation, which is shaped and transmitted through a near-vacuum H 2 background gas. This gas is excited into a low-density H 2 plasma by the EUV radiation, as generated in pulsed mode operation by the laser-produced plasma in the EUV source. Thus, in the confinement created by the walls and mirrors within the scanner system, a reductive plasma environment is created that must be understood in detail to maximize mirror transmission over the lifetime and to minimize molecular and particle contamination in the scanner. In addition to the irradiated mirrors, reticle, and wafer, the plasma and radical load to the surrounding construction materials also must be considered. We provide an overview of the EUV-induced plasma in the scanner context. Special attention is given to the plasma parameters in a confined geometry, such as that found in the scanner area near the reticle. It is shown that plasma confinement and resulting contributions from secondary electron emission delay the formation of the plasma sheath and thereby reduce the peak ion energies to below the sputtering threshold for mirrors and construction materials. Furthermore, for a confined pulsed plasma with a pulse period shorter than the decay time of the plasma, the plasma consists of a quasi-steady-state cold background plasma and periodic transient peaks in ion energy and ion flux. In terms of modeling, this means that no assumptions can be made on the electron distribution functions and a (Monte-Carlo) particle-in-cell (PIC) model is needed. We present an extension of the PIC model approach to complex three-dimensional geometries and to multiple pulses using a hybrid PIC-diffusion approach. Also, the translation of these specific plasma parameters to off-line setups and the aspects that must be included to make a meaningful translation from off-line laboratory EUV setups to the scanner plasma are discussed. © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Photoelectric Effectmentioning

confidence: 99%

Section: Photoelectric Effectmentioning

confidence: 99%

EUV-induced hydrogen plasma: pulsed mode operation and confinement in scanner

Kerkhof

Yakunin

Astakhov

et al. 2021

J. Micro/Nanopattern. Mats. Metro.

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“…Problem of calculation forces, acting on microparticles of condensed matter, so-called dust particles, in a plasma flowing environment, arises in a variety of industry applications [1,2,3] and fundamental issues [4,5,6,7], related to the complex plasma physics [8]. For example, flowing plasma can lead to the release of pollutant particles from a processed sample during extreme ultraviolet lithography important for microelectronics [1,3,2], which can lower the quality and productivity of the manufacturing processes. Controlling and minimizing contamination of such particles requires detailed study of the forces, acting on them.…”

Section: Introductionmentioning

confidence: 99%

OpenDust: A fast GPU-accelerated code for calculation forces, acting on microparticles in a plasma flow

Kolotinskii¹,

Timofeev²

2022

Preprint

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We present the first open-source, GPU-based code for complex plasmas. The code, OpenDust, aims to provide researchers both experimenters and theorists user-friendly and high-performance tool for self-consistent calculation forces, acting on microparticles, and microparticles' charges in a plasma flow. OpenDust performance originates from highly-optimized Cuda back-end and allows to perform self-consistent calculation of plasma flow around microparticles in seconds. This code outperforms all available codes for self-consistent complex plasma simulation. Moreover, OpenDust can also be used for simulation of larger systems of dust microparticles, that was unavailable before. OpenDust interface is written in Python, which provides ease-of-use and simple installation from Conda repository.

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“…an excess of electrons, when exposed to, for instance, radiofrequency (RF) [8,9] or extreme ultravioletinduced [10] plasmas since the electrons possess higher mobility compared to ions. Charge accumulation on these surfaces is studied to account for various phenomena such as particle lofting [11]. Crucial in these applications is the fundamental understanding of charging of particle-laden surfaces immersed in plasmas, for which so far a comprehensive model predicting the charging dynamics does not exist.…”

Section: Introductionmentioning

confidence: 99%

Quantum dot photoluminescence as charge probe for plasma exposed surfaces

Hasani

Klaassen²,

Marvi³

et al. 2022

J. Phys. D: Appl. Phys.

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Quantum dots (QDs) are used as nanometer-sized in-situ charge probes for surfaces exposed to plasma. Excess charges residing on an electrically floating surface immersed in a low pressure argon plasma are detected and investigated by analysis of variations in the photoluminescence (PL) spectrum of laser excited QDs that were deposited on that surface. The experimentally demonstrated redshift of the PL spectrum peak is linked to electric fields associated with charges near the QDs' surfaces, a phenomenon entitled the quantum-confined Stark effect. Variations in the surface charge as a function of plasma input power result in different values of the redshift of the peak position of the PL spectrum. The values of redshift are detected as 0.022 nm and 0.073 for 10 W and 90 W plasma input powers, respectively; therefore indicating an increasing trend. From that, a higher microscopic electric field, 9.29×106 V/m for 90 W compared to 3.29×106 V/m for 10 W input power, which is coupled to an increased electric field in the plasma sheath, is sensed by the QDs when plasma input power is increased.

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Dielectric particle lofting from dielectric substrate exposed to low-energy electron beam

Cited by 9 publications

References 24 publications

EUV-induced hydrogen plasma: pulsed mode operation and confinement in scanner

EUV-induced hydrogen plasma: pulsed mode operation and confinement in scanner

OpenDust: A fast GPU-accelerated code for calculation forces, acting on microparticles in a plasma flow

Quantum dot photoluminescence as charge probe for plasma exposed surfaces

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