2006
DOI: 10.1063/1.2173232
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Dielectric properties of ⟨001⟩-oriented Ba0.6Sr0.4TiO3 thin films on polycrystalline metal tapes using biaxially oriented MgO∕γ-Al2O3 buffer layers

Abstract: We report the growth of ⟨001⟩-oriented Ba0.6Sr0.4TiO3 (BST) thin films on polycrystalline Ni-alloy tapes by pulsed laser deposition using biaxially oriented, ion-beam-assisted deposited (IBAD) MgO and γ-Al2O3 buffer layers. Dielectric constant values of our BST films were up to ∼85% of those in the epitaxial films prepared under similar conditions on single-crystal MgO substrates. No significant dispersion of the dielectric constant was observed for frequencies from 100Hz to 1MHz. These results demonstrate the… Show more

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Cited by 19 publications
(9 citation statements)
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“…Both of the BST films exhibited clear hysteresis (butterfly curves) in the ɛ r with dc bias, indicating the presence of permanent dipoles. Tunability is defined as (ɛ r,max −ɛ r,min )/ɛ r,max , which is known to depend on the degree of orientation 16 . The (111)‐oriented BST film grown with OMR=30% exhibited a remarkably tunability of 68%, as compared with 52% obtained with the highly (001)‐oriented BST film, at an applied field of ±400 kV/cm.…”
Section: Resultsmentioning
confidence: 99%
“…Both of the BST films exhibited clear hysteresis (butterfly curves) in the ɛ r with dc bias, indicating the presence of permanent dipoles. Tunability is defined as (ɛ r,max −ɛ r,min )/ɛ r,max , which is known to depend on the degree of orientation 16 . The (111)‐oriented BST film grown with OMR=30% exhibited a remarkably tunability of 68%, as compared with 52% obtained with the highly (001)‐oriented BST film, at an applied field of ±400 kV/cm.…”
Section: Resultsmentioning
confidence: 99%
“…The IBAD technique has been used with great effect to integrate single‐crystal‐like thin films of several different material systems with arbitrary smooth substrates; the prime example being high‐temperature superconducting wires . Researchers have used this technique to produce highly (001) oriented Ba 0.6 Sr 0.4 TiO 3 films on various substrates with excellent dielectric tunability/loss ratios for frequency agile devices . IBAD‐MgO has also been applied to amorphous Si 3 N 4 substrates for integration of Ba x Pb 1 − x TiO 3 thin films .…”
Section: Introductionmentioning
confidence: 99%
“…Additionally, few reports on IBAD-MgO have been made for ferroelectrics or functional oxides other than HTS [16][17][18]. The perfection of crystallization (i.e., mosaic spread, in-plane alignment, out-of-plane orientation, and surface roughness) still requires intense study.…”
Section: A Texturing Mechanismmentioning
confidence: 99%