Dielectric properties of (100) textured thick Pb(ZrxTi1−x)O3 films with different Zr/Ti atom ratios

Abstract

Near 4-μm-thick Pb(ZrxTi1−x)O3 (PZT) films with Zr/Ti ratios of 60/40, 52/48, and 45/55 were coated onto platinized silicon substrates by using 2-methoxyethanol based sol-gel spin-on techniques with a special thermal treatment process. The scanning electron microscopy observations show the columnar growth of grains. The analysis of x-ray diffraction data indicates that all PZT films exhibit (100) texture. The dielectric constants and dissipation factors of the films were measured at elevated temperatures and frequencies. It is found that Curie points of 60/40, 52/48, and 45/55 films are at 350, 375, and 422 °C, respectively. All these films exhibit high dielectric constants and remnant polarizations. A permittivity of 1658 and remnant polarization of 35 μC/cm2 had been achieved for the 60/40 films. No enhancement of the dielectric constant was observed in films with a Zr/Ti ratio close to morphotropic phase boundary. The high dielectric constant observed in films with the higher Zr content was explained by the concept of domain engineering.

Synthesis and characterization of thick PZT films via sol–gel dip coating method

“…11 for the PZT films synthesized by using water with the molar ratio of 0.5 and 2. As expected, water with the molar ratio of 0.5 causes a great increase in dielectric constant, which is measured about 1630 at the frequency of 1 KHz and is substantially the highest dielectric constant among other reported values [47]. Since switching large number of aligned dipoles induces high friction in the crystal structure at high frequencies, there is not enough time for switching the dipoles and the dielectric constant drops faster than other samples.…”

Effect of V doping on phase composition and electrical properties of K0.4Na0.6Nb1−xVxO3 thin films

“…The dielectric constant increases with the V content increasing, and the KNNV 0.015 film gains the maximum value of dielectric constant (ε = 1189). The above results suggest that the KNNV 0.015 film may be near the O-and T-phases boundary [25].…”

Structural and electrical properties of Pb(Zr0.53Ti0.47)O3 films prepared on La0.5Sr0.5CoO3 coated Si substrates

“…It is notable that a larger remnant polarization can be expected in epitaxial or preferential oriented ferroelectric films compared to that in films with random texture. 4 This is mainly because that crystallization is highly oriented, normally vertical to the surface of the films in epitaxial or preferential oriented ferroelectric films, providing a stronger polarization direction. Such a highly oriented structure tends to form a concentrated polarization which results in higher dielectric constant.…”

“…3 For a practical intention, epitaxial or well-textured PZT films are preferable, which is mainly because epitaxial or well-textured PZT films can hold predominant integrative performance, and produce a larger remnant polarization in the appropriate direction. 4 So far, the growth of epitaxial PZT films with LSCO electrodes has been reported on single crystal substrates such as LaAlO 3 , 5 SrTiO 3 , 6,7 yttrium-stabilized zirconia, 6 etc. using physical process such as rf-sputtering and pulsed laser deposition.…”