Structure and properties of W O 3 -doped Pb 0.97 La 0.03 ( Zr 0.52 Ti 0.48 ) O 3 ferroelectric thin films prepared by a sol-gel process J. Appl. Phys. 98, 034104 (2005); 10.1063/1.1999834 Structure and piezoelectric properties of sol-gel-derived (001)-oriented Pb[Yb 1/2 Nb 1/2 ] O 3 -PbTiO 3 thin films J. Appl. Phys. 94, 3397 (2003); 10.1063/1.1596716 Structure and piezoelectric properties of sol-gel-derived 0.5 Pb [ Yb 1/2 Nb 1/2 ] O 3 -0.5 PbTiO 3 thin films

It has been recognized that the control of crystalline orientation and thickness of Pb(Zr0.52Ti0.48)O3 (PZT) thin-films is very critical in the fabrication of piezoelectric thin-film devices with desirable dielectric and electromechanical properties. Here, we present our recent studies on the fabrication of PZT films with (001), (111), and random crystalline orientations onto platinized silicon substrates and the crystalline orientation dependence of the nanomechanical properties. A 1.0-μm PZT film with a strong (100) orientation is deposited by a 2–methoxyethanol- (2–MOE)-based sol–gel precursor solution, while random orientation is obtained by acetic acid-based sol–gel precursor. Rapid thermal annealing of 2–MOE sol-gel-based PZT films leads to strong (111) orientation. All PZT films show similar hysteresis behavior and large remnant polarizations; however, the nanomechanical test using AFM and nanoindentation indicates distinct values of Young’s modulus for PZT films with different orientations.

Articles you may be interested inEnhanced magnetoelectric effect in La0.67Sr0.33MnO3/PbZr0.52Ti0.48O3 multiferroic nanocomposite films with a SrRuO3 buffer layer Enhanced fatigue and retention properties of Pb(Ta 0.05 Zr 0.48 Ti 0.47 )O 3 films using La 0.25 Sr 0.75 CoO 3 top and bottom electrodes

Near 4-μm-thick Pb(ZrxTi1−x)O3 (PZT) films with Zr/Ti ratios of 60/40, 52/48, and 45/55 were coated onto platinized silicon substrates by using 2-methoxyethanol based sol-gel spin-on techniques with a special thermal treatment process. The scanning electron microscopy observations show the columnar growth of grains. The analysis of x-ray diffraction data indicates that all PZT films exhibit (100) texture. The dielectric constants and dissipation factors of the films were measured at elevated temperatures and frequencies. It is found that Curie points of 60/40, 52/48, and 45/55 films are at 350, 375, and 422 °C, respectively. All these films exhibit high dielectric constants and remnant polarizations. A permittivity of 1658 and remnant polarization of 35 μC/cm2 had been achieved for the 60/40 films. No enhancement of the dielectric constant was observed in films with a Zr/Ti ratio close to morphotropic phase boundary. The high dielectric constant observed in films with the higher Zr content was explained by the concept of domain engineering.