2022
DOI: 10.1016/j.ceramint.2021.12.178
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Dielectric properties of alumino-silicate ceramics synthesized by plasma sintering

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Cited by 7 publications
(4 citation statements)
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“…[ 37 ] With the rise in frequency, the polarization effects decrease exponentially and only electronic polarization contributes at higher frequencies. [ 38–39 ] Thus, ϵ r and tanδ values of these CaO‐MZ composites reduce with rising frequency at different selected temperatures. At room temperature, ϵ r at 1 MHz for CaO‐CMZ and CaO‐PMZ composites is 4.7 and 3.8, respectively, whereas tanδ is 2.6 × 10 −2 and 2.19 × 10 −2 , respectively.…”
Section: Resultsmentioning
confidence: 99%
“…[ 37 ] With the rise in frequency, the polarization effects decrease exponentially and only electronic polarization contributes at higher frequencies. [ 38–39 ] Thus, ϵ r and tanδ values of these CaO‐MZ composites reduce with rising frequency at different selected temperatures. At room temperature, ϵ r at 1 MHz for CaO‐CMZ and CaO‐PMZ composites is 4.7 and 3.8, respectively, whereas tanδ is 2.6 × 10 −2 and 2.19 × 10 −2 , respectively.…”
Section: Resultsmentioning
confidence: 99%
“…As frequency increases, Mʹ values gradually increase and attain a maximum value which can be attributed to the short‐range mobility of charge carriers within the domain structures. [ 35 ] However, with the temperature rise, the peak values get shifted toward high frequencies which can be attributed to some conductivity relaxation processes occurring in these composites. [ 36 ] For high temperatures (>150 °C) the maximum Mʹ value may arise at higher frequencies, beyond the experimental frequency limit.…”
Section: Resultsmentioning
confidence: 99%
“…The development of new 2D silicate-based dielectric materials with improved performance, lower dielectric losses, and improved thermal stability could be among the future possibilities. For example, aluminum silicates are one of the dielectric materials used in capacitors and electronic device insulating layers [104]. Silicate materials could be studied for use in memristors and resistive switching devices [105].…”
Section: Electrical and Memory Devicesmentioning
confidence: 99%