Dielectric properties of continuous composition spreaded MgO–Ta2O5 thin films

High dielectric constant, low loss dielectric thin film materials produced by reactive RF sputtering have been investigated for use as capacitor dielectrics in integrated circuits, using oxides of niobium, tantalum, titanium, hafnium, and zirconium and mixtures of these with aluminum oxide. High breakdown fields and low leakage currents are found for the best materials and a reduction in capacitor area of a factor of >3 compared with Si3N4 capacitors of the same value, using a simple production process compatible with semiconductor device manufacturing.

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Thin film high dielectric constant metal oxides prepared by reactive sputtering

Wright

Judge

Lee

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Dielectric properties of continuous composition spreaded MgO–Ta2O5 thin films

Cited by 1 publication

References 14 publications

Thin film high dielectric constant metal oxides prepared by reactive sputtering

Thin film high dielectric constant metal oxides prepared by reactive sputtering

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