Thin film high dielectric constant metal oxides prepared by reactive sputtering

Wright, S. W.; Judge, C. P.; Lee, Michael J.; Bowers, D.F.; Dunbar, M.; Wilson, Craig D.

doi:10.1116/1.4757132

Cited by 7 publications

(5 citation statements)

References 16 publications

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“…Studies lead by Wright et al systematically investigated the electrical and dielectric properties of tantalum oxide and its mixtures by reactive RF sputtering. 136 The films were sputtered from metal targets in an Ar/O 2 gas mixture onto unheated substrates, which were then annealed at 450 °C in O 2 atmosphere for 1 h. The resulting ∼200 nm thick Ta 2 O 3 , Ta 0.95 Al 0.05 O x , Ta 0.9 Zr 0.1 O x , and Ta 0.8 Nb 0.2 O x films exhibit dielectric constants larger than 20 and a low dielectric loss of only ∼0.0014. The authors indicated that the ternary films exhibit much lower leakage currents than that of the Ta 2 O 5 films with a breakdown field of ∼7 MV cm −1 .…”

Section: Chemical Reviewsmentioning

confidence: 99%

“…However, the leakage current of these sputtered films is relatively high (∼10 –4 A cm –2 at 4 V), which is unsuitable for use as a TFT gate dielectric. Studies lead by Wright et al systematically investigated the electrical and dielectric properties of tantalum oxide and its mixtures by reactive RF sputtering . The films were sputtered from metal targets in an Ar/O 2 gas mixture onto unheated substrates, which were then annealed at 450 °C in O 2 atmosphere for 1 h. The resulting ∼200 nm thick Ta 2 O 3 , Ta 0.95 Al 0.05 O x , Ta 0.9 Zr 0.1 O x , and Ta 0.8 Nb 0.2 O x films exhibit dielectric constants larger than 20 and a low dielectric loss of only ∼0.0014.…”

Section: High-k Dielectric Materialsmentioning

confidence: 99%

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High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

et al. 2018

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Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high- k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high- k dielectrics over low- k ones in TFT applications were elaborated. Next, after presenting the design and properties of high- k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high- k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.

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Section: Chemical Reviewsmentioning

confidence: 99%

Section: High-k Dielectric Materialsmentioning

confidence: 99%

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

et al. 2018

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“…Thus, there has been a surge of research interest on high-k dielectric GI materials of oxide TFTs for flexible and stretchable applications [1]. While high-k GI materials such as ZrO 2 [2], HfO 2 [3], Al 2 O 3 [4], Ta 2 O 3 [5], and Y 2 O 3 [6] ensure high performance at low voltage operation, most are fabricated through vacuum process such as sputtering and atomic layer deposition to maintain suitable film quality. Nevertheless, vacuum deposition has a relatively high cost and requires lengthy and/or high temperature processes that deters the use of flexible substrates.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence and functionalization of solution processed high-k hybrid gate insulators for high performance oxide thin-film transistors

Bermundo

Kesorn

Yoshida

et al. 2021

J. Phys. D: Appl. Phys.

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We demonstrate a solution processed gate insulator (GI) with high dielectric constant (high-k) of up to ∼8.9 for high performance and low voltage operation amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). High mobilities of up to ∼30 cm2 V s−1, threshold voltage of <0.5 V, and low off current (∼10−12 A) can be achieved through the combination of high-k BaTiO x (BTO) nanoparticles and a polysiloxane (PSX) polymer matrix. This combination enables a lower process temperature of 300 °C from 650 °C while ensuring enhanced performance and low gate leakage current. We also show the tunability of the high-k hybrid BTO/PSX through fluorination and addition of a photosensitive property to further reduce the leakage current and inhibit dry etching related degradation. High-k hybrid BTO/PSX GI is a promising candidate for high performance and low-voltage operation oxide TFTs.

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“…14 Ideal TiO 2 has a high dielectric constant up to 100, which has the potentiality to control high carrier densities even at small electric fields to improve the output of diamond MOSFETs. 15,16 In order to fully understand the performance of diamond electronics, theoretical investigation of the oxide/diamond is in demand.…”

Section: Introductionmentioning

confidence: 99%

A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface

Liao

Sang

et al. 2018

Journal of Applied Physics

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Tailoring the electronic states of the dielectric oxide/diamond interface is critical to the development of next generation semiconductor devices like high-power high-frequency field-effect transistors. In this work, we investigate the electronic states of the TiO 2 /diamond 2 Â 1-(100) interface by using first principles total energy calculations. Based on the calculation of the chemical potentials for the TiO 2 /diamond interface, it is observed that the hetero-interfaces with the C-OTi configuration or with two O vacancies are the most energetically favorable structures under the Orich condition and under Ti-rich condition, respectively. The band structure and density of states of both TiO 2 /diamond and TiO 2 /H-diamond hetero-structures are calculated. It is revealed that there are considerable interface states at the interface of the anatase TiO 2 /diamond hetero-structure. By introducing H on the diamond surface, the interface states are significantly suppressed. A type-II alignment band structure is disclosed at the interface of the TiO 2 /diamond hetero-structure. The valence band offset increases from 0.6 to 1.7 eV when H is introduced at the TiO 2 /diamond interface.

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Thin film high dielectric constant metal oxides prepared by reactive sputtering

Cited by 7 publications

References 16 publications

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

Temperature dependence and functionalization of solution processed high-k hybrid gate insulators for high performance oxide thin-film transistors

A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface

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