Dielectric properties of epitaxial BaTiO3 thin films

Hoerman, B. H.; Ford, G. M.; Kaufmann, L. D.; Wessels, Bruce W.

doi:10.1063/1.121691

Cited by 122 publications

(52 citation statements)

References 19 publications

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“…93, 132904 ͑2008͒ seen to date by Dittmann et al 34 had a value of ϳ120°C. Two other selected data sets typical of conventional thin film behavior published by Yoneda et al 35 and Hoerman et al 36 had values of ϳ30 and Ͼ160°C, respectively. Figure 4͑a͒ illustrates typical capacitance-voltage ͑C-V͒ data, which were used to reconstruct integrated chargevoltage plots ͑which scale as the polarization-field, or P-E, response͒.…”

Section: -2mentioning

confidence: 99%

Size effects on thin film ferroelectrics: Experiments on isolated single crystal sheets

Chang

McMillen

Morrison

et al. 2008

Applied Physics Letters

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Thin lamellae were cut from bulk single crystal BaTiO3 using a focused ion beam microscope. They were then removed and transferred onto single crystal MgO substrates, so that their functional properties could be measured independent of the original host bulk ferroelectric. The temperature dependence of the capacitance of these isolated single crystal films was found to be strongly bulklike, demonstrating a sharp Curie anomaly, as well as Curie–Weiss behavior. In addition, the sudden change in the remanent polarization as a function of temperature at TC was characteristic of a first order phase change. The work represents a dramatic improvement on that previously published by Saad et al. [J. Phys.: Condens. Matter 16, L451 (2004)], as critical shortcomings in the original specimen geometry, involving potential signal contributions from bulk BaTiO3, have now been obviated. That the functional properties of single crystal thin film lamellae are comparable to bulk, and not like those of conventionally deposited heterogeneous thin film systems, has therefore been confirmed.

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Section: -2mentioning

confidence: 99%

Size effects on thin film ferroelectrics: Experiments on isolated single crystal sheets

Chang

McMillen

Morrison

et al. 2008

Applied Physics Letters

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“…4(c), for a single ferroelectric domain (point A) by using the conducting AFM tip as the top electrode in PFM. The coercive electric field ͑E c ͒ at which the polarization changes its direction is 12-20 kV/ cm and is smaller than typical E c that ranged from 30 to 53 kV/ cm in polycrystalline BaTiO 3 . 6 The coercive field is known to be sensitive to the presence of defects and we note that the E c of transferred BaTiO 3 thin films is comparable to that exhibited by single crystals ͑7-10 kV/cm͒, 18 indicating that the transferred BaTiO 3 layer shows nearly single crystal coercivity despite the presence of some domain-related defects.…”

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“…The transferred BaTiO 3 films are single crystalline with root mean square roughness of 17 nm. Polarized optical and piezoresponse force microscopy (PFM) indicate that the BaTiO 3 film domain structure closely resembles that of bulk tetragonal BaTiO 3 and atomic force microscopy shows a 90°a -c domain structure with a tetragonal angle of 0.5°-0.6°. Micro-Raman spectroscopy indicates that the local mode intensity is degraded in implanted BaTiO 3 but recovers during anneals above the Curie temperature.…”

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confidence: 99%

“…Micro-Raman spectroscopy indicates that the local mode intensity is degraded in implanted BaTiO 3 but recovers during anneals above the Curie temperature. The piezoelectric coefficient, d 33 , is estimated from PFM to be 80-100 pm/ V and the coercive electric field ͑E c ͒ is 12-20 kV/ cm, comparable to those in single crystal BaTiO 3 Ferroelectric thin films have been widely explored for application as capacitor dielectrics and memory elements in nonvolatile random access memory (NVRAM) devices, and have promise for high work/volume mechanical actuators in microelectromechanical systems (MEMS) applications.…”

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confidence: 99%

“…Metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD) and sol-gel synthesis processes have been used for heteroepitaxial growth of ferroelectric thin films on various substrates. [3][4][5][6] However, in spite of many efforts to realize epitaxial growth on various lattice mismatched substrates, deposited thin films rarely exhibit properties comparable to those of bulk single crystals.…”

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Microstructure and properties of single crystal BaTiO3 thin films synthesized by ion implantation-induced layer transfer

Park

Ruglovsky

Atwater

2004

Applied Physics Letters

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Single crystal BaTiO 3 thin films have been transferred onto Pt-coated and Si 3 N 4 -coated substrates by the ion implantation-induced layer transfer method using H + and He + ion coimplantation and subsequent annealing. The transferred BaTiO 3 films are single crystalline with root mean square roughness of 17 nm. Polarized optical and piezoresponse force microscopy (PFM) indicate that the BaTiO 3 film domain structure closely resembles that of bulk tetragonal BaTiO 3 and atomic force microscopy shows a 90°a -c domain structure with a tetragonal angle of 0.5°-0.6°. Micro-Raman spectroscopy indicates that the local mode intensity is degraded in implanted BaTiO 3 but recovers during anneals above the Curie temperature. 1,2 In most cases, these ferroelectric thin films have a polycrystalline microstructure that degrades the piezoelectric coefficients, saturation polarization, and charge retention and causes time-dependent fatigue problems.A number of film deposition methods have been studied to fabricate high quality ferroelectric oxides. Metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD) and sol-gel synthesis processes have been used for heteroepitaxial growth of ferroelectric thin films on various substrates.3-6 However, in spite of many efforts to realize epitaxial growth on various lattice mismatched substrates, deposited thin films rarely exhibit properties comparable to those of bulk single crystals.Layer transfer is one of the most promising methods by which to realize single crystal properties in thin films and to overcome substrate-film lattice mismatch effects. Crystal ion slicing (CIS) processes have been reported for layer transfer of silicon, InP, Ge and diamond. 7,8 Recently, layer splitting and transfer of ferroelectric materials such as LiNbO 3 , LiTaO 3 , KTaO 3 , SrTiO 3 , and BaTiO 3 by sacrificial wet etching and anodic bonding methods combined with the CIS method have also been reported. 9,10 To date, characterization of both the microstructure and ferroelectric properties of transferred ferroelectric thin films as well as the principal role of the implanted gas species have not been extensively reported. Single crystal ferroelectric thin films can be used in applications such as actuator devices, monolithically integrated optical waveguides on Si-based microelectronics devices 17 /cm 2 , and 30-115 keV He + ion was subsequently implanted with a dose in the range of 5 ϫ 10 16 -1ϫ 10 17 /cm 2 . Implantation was performed at −25°C to prevent the formation of cavities during implantation. The root mean square (rms) roughness of the surface was 2.0 nm for unimplanted bulk BaTiO 3 and 2.0-3.0 nm for as-implanted BaTiO 3 . The substrates used for layer transfer were 50 nm thick low pressure CVD (LPCVD) grown Si 3 N 4 / n-Si with a surface roughness of 0.5-0.8 nm and 200 nm thick sputter-deposited Pt films on 50 nm Si 3 N 4 / Si with a surface roughness of 3.0 nm.After the implantation step, both BaTiO 3 and the substrates were cleaned by dipp...

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Manipulation of Electric Field Effect by Orbital Switch

Cui

Song

Mao

et al. 2015

Adv Funct Materials

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753wileyonlinelibrary.com is a combination of ferroelectric/ferromagnetic model materials. More importantly, the connection and breakdown of interfacial covalent bond could be tuned by the ferroelectric displacement of Ti orbital under electric fi eld. [ 9 ] When this covalent bond is introduced into the interface between ionic liquid (IL) and LSMO, where gate voltage could generate an in-depth and enduring modulation of carrier density in the LSMO, it produces a chance for controlling the bulk electric-fi eld effect. Such a switchable covalent bond determined by the orbital reconstruction might also make the orbital degree of freedom straight forward to the application in microelectronic device, which has been dominated only by charge and spin by far. Results and DiscussionLSMO/BTO heterostructures were grown on STO substrates by pulsed laser deposition (PLD). The ferroelectric switching could be observed in the heterostructure with an ultrathin BTO of 3.2 nm as shown in the out-of-plane piezoresponse force microscopy (PFM) image. A series of alternative d.c. bias of +3 V → −3 V → +3 V → −3 V → +3 V are applied to the BTO and a 1000 mV a.c. voltage is utilized to read the phase reversal subsequently as presented in Figure 1 a. The apparent 180° phase contrast implies the existence of the ferroelectric switching in the fi lm: a positive voltage triggers the ferroelectric polarization toward the LSMO bottom layer, whereas a negative voltage polarizes the BTO upward. It is noteworthy that the phase contrast remains after repetitive measurements for many times. The ferroelectricity of BTO mainly originates from compressive strain produced by STO substrate and LSMO underneath as the X-ray diffraction (XRD) of LSMO (20 nm)/BTO (80 nm) on STO substrate in Figure 1 b shown. The 2 θ angle for BTO (002) peak is around 44.17° and corresponding c -axis lattice constant is 4.10 Å (4.04 Å for tetragonal ferroelectric phase), suggesting that the BTO fi lm under in-plane compressive strain is tetragonal ferroelectric phase. [ 10,11 ] Here the thick BTO 80 nm is used to give a clearer diffraction peak and the c -axis lattice constant for thinner BTO fi lm should be larger due to its less strain relaxation.To directly illustrate the ferroelectric movement of Ti ions under electric fi eld, the atomic resolution aberration-corrected high-angle annular dark fi eld scanning transmission electron microscope (HAADF-STEM) image with its analysis is presented in Figure 2 . Coherent growth of 3.2 nm BTO on 20 nm Manipulation of Electric Field Effect by Orbital SwitchBin Cui , Cheng Song , * Haijun Mao , Yinuo Yan , Fan Li , Shuang Gao , Jingjing Peng , Fei Zeng , and Feng

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Dielectric properties of epitaxial BaTiO3 thin films

Cited by 122 publications

References 19 publications

Size effects on thin film ferroelectrics: Experiments on isolated single crystal sheets

Size effects on thin film ferroelectrics: Experiments on isolated single crystal sheets

Microstructure and properties of single crystal BaTiO3 thin films synthesized by ion implantation-induced layer transfer

Manipulation of Electric Field Effect by Orbital Switch

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