Dielectric properties of gadolinium-doped SrBi2Nb2O9 ceramics

Afqir, Mohamed; Tachafine, Amina; Fasquelle, Didier; Elaatmani, M.; Carru, Jean-Claude; Zegzouti, Abdelouahad; Daoud, Mohamed

doi:10.1007/s10854-017-8034-8

Cited by 14 publications

(7 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…5 Nd x Bi 2.5-x Nb 2 O 9 (NNBN) (x = 0.1, 0.2, 0.3 and 0.5) suggested thatNd 3+ ions occupied Na-site in NNBN and are diffused into the (Bi 2 O 2 ) 2+ slabs. In view of the above, it can be concluded that the distortion induced by the Gd 3+ ion modi cation could be a possible reason for the diffuseness behaviour in the present ceramic materials[42][43]. A similar behaviour has been observed in case of SB 0.6 GN and SB 0.8 GN compositions along with SBN, given in table 4.…”

supporting

confidence: 79%

“…The maximum density for the studied samples has been obtained at 1120 C for 2 hours. The decrease in the lattice parameters can be ascribed to the substitution of the larger radius of Bi 3+ ion (1.020 Å) compared to that Gd 3+ ion (0.938 Å) [24,25]. Further, the orthorhombic distortion values also are identi ed to decrease from SBN values.…”

mentioning

confidence: 93%

“…A similar behaviour has been observed in both SB 0.6 GN and SB 0.8 GN ceramic materials. The attening of dielectric permittivity and low dielectric loss are desirable features to suit Non-volatile Fe RAM applications [25]. Fig.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Synthesis, Structural and Dielectric Studies on SrBi2-xGdxNb2O9 Lead Free Ceramics

Jaladi¹,

Rao

Workineh

et al. 2020

Preprint

View full text Add to dashboard Cite

In this manuscript, the structural and dielectric properties of Gadolinium (Gd3+) substituted at Bi-site of SrBi2-xGdxNb2O9 (x= 0.0, 0.4, 0.6 and 0.8) prepared by using solid state reaction are studied. XRD analysis revealed the formation of single phase with orthorhombic structure in SBN and Gadolinium modified SBN. It is found that cell parameters and volume were decreased with increase of Gd3+ ion concentration in SBN. SEM analysis revealed that the samples possess well defined needle shaped grains. The grain size of SBN was hindered by the presence of Gd3+ ion at Bi-site. The growth of single phase layered perovskite structure was confirmed from FTIR and Raman spectroscopy. The dielectric properties of Gd3+ ion doped SBN ceramics are studied as a function of frequency (50Hz-1MHz) from room temperature to 500ºC. It is observed that phase transition temperature (Tc) decreased from 430ºC to 330ºC with increase of frequency due to incorporation of Gd3+ ion in SBN. The broadness of peaks and decrease in Tc indicate the transition from a normal ferroelectric to ferroelectric-relaxor type. The study on variation of tanδ with temperature at different frequencies indicates that tanδ has larger values at higher temperatures. Further, the diffuseness parameter (γ) has been computed for all the compositions.

show abstract

supporting

confidence: 79%

mentioning

confidence: 93%

See 1 more Smart Citation

Synthesis, Structural and Dielectric Studies on SrBi2-xGdxNb2O9 Lead Free Ceramics

Jaladi¹,

Rao

Workineh

et al. 2020

Preprint

View full text Add to dashboard Cite

show abstract

“…In this regard, many efforts have been suggested doping by rare earth elements [4][5][6]. We found that the dielectric constant, the phase transition temperature (T C ) and dielectric loss decrease when bismuth is substituted with samarium or gadolinium [7,8]. Recently, fluorescence properties of Eu 3+ ions incorporated into SrBi 2 Nb 2 O 9 have been studied by Volanti et al [9].…”

Section: Introductionmentioning

confidence: 99%

Structural, electric and dielectric properties of Eu-doped SrBi2Nb2O9 ceramics obtained by co-precipitation route

Afqir

Tachafine

Fasquelle

et al. 2018

PAC

Self Cite

View full text Add to dashboard Cite

This paper presents a study of the structure and dielectric properties of Eu-doped SrBi2Nb2O9 ceramics prepared by co-precipitation route and sintered at 850?C. The materials were examined using XRD and FTIR methods. XRD data indicated the formation of well crystallized structure of the pure and doped SrBi2Nb2O9, without the presence of undesirable phases. FTIR spectra do not bring a significant shift in the band positions. Moreover, the AC conductivity, dielectric constant and dielectric loss of the ceramics were determined through the frequency range [50 kHz-1MHz]. In particular, the dielectric constant (??) and dielectric losses (tan ?) of the SrBi2Nb2O9 and SrBi1.6Eu0.4Nb2O9 ceramics were measured as a function of temperature at various frequencies.

show abstract

“…These ceramics possess favourable characteristics such as lead-free composition, high Curie temperatures, and exceptional fatigue resistance. [1][2][3][4] The high fatigue resistance exhibited by Aurivillius ceramics is particularly crucial for devices that undergo repetitive electrical cycles, such as NVRAM, electro-optic devices, and high-temperature piezoelectric devices. Moreover, the ferroelectric properties inherent in Aurivillius ceramics are exploited in optical memory applications.…”

mentioning

confidence: 99%

Exploration of the Structural, Dielectric, Ferroelectric, and Piezoelectric Properties in Non-stoichiometric Sr_1−XBi_2+2X/3Nb₂O₉ Ceramics

Singh,

Gautam,

Luthra

et al. 2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

In this study, the authors focused on the preparation and characterization of Lead-free ferroelectric ceramics known as Sr1−XBi2+2X/3Nb2O9: SBBNX, where 0.0≤ × ≤0.4. The ceramics were synthesized using a conventional solid-state reaction route. The researchers performed X-ray diffraction (XRD) analysis to confirm the phase formation and employed the Rietveld refinement technique. The results indicated that the prepared SBBNX ceramics exhibited a single phase with an orthorhombic structure, specifically belonging to the A21am space group. All samples were subjected to analysis using field emission scanning electron microscopy (FESEM) to investigate their surface morphology. The micrographs revealed a uniform distribution of grains (of size 2–4 μm ) on the surface, with distinct grain boundaries. An increasing trend in both the dielectric constant (from 99 to 220 at room temperature) and transition temperature (from 396 °C to 490 °C) was noted with an increase of Bi content in SBN. The researchers estimated the activation energies by analyzing the Arrhenius plots of the ac conductivity. The obtained values ranged from 0.62 to 1.25 eV, indicating the presence of motion of oxygen vacancies in the SBBNX ceramics. The primary objective of this study was to optimize the Sr/Bi ratio in SBBNX ceramics to enhance their potential use in non-volatile random access memory (NVRAM) applications and high-temperature piezoelectric devices.

show abstract

Dielectric properties of gadolinium-doped SrBi2Nb2O9 ceramics

Cited by 14 publications

References 34 publications

Synthesis, Structural and Dielectric Studies on SrBi2-xGdxNb2O9 Lead Free Ceramics

Synthesis, Structural and Dielectric Studies on SrBi2-xGdxNb2O9 Lead Free Ceramics

Structural, electric and dielectric properties of Eu-doped SrBi2Nb2O9 ceramics obtained by co-precipitation route

Exploration of the Structural, Dielectric, Ferroelectric, and Piezoelectric Properties in Non-stoichiometric Sr_1−XBi_2+2X/3Nb₂O₉ Ceramics

Contact Info

Product

Resources

About

Dielectric properties of gadolinium-doped SrBi2Nb2O9 ceramics

Cited by 14 publications

References 34 publications

Synthesis, Structural and Dielectric Studies on SrBi2-xGdxNb2O9 Lead Free Ceramics

Synthesis, Structural and Dielectric Studies on SrBi2-xGdxNb2O9 Lead Free Ceramics

Structural, electric and dielectric properties of Eu-doped SrBi2Nb2O9 ceramics obtained by co-precipitation route

Exploration of the Structural, Dielectric, Ferroelectric, and Piezoelectric Properties in Non-stoichiometric Sr1−XBi2+2X/3Nb2O9 Ceramics

Contact Info

Product

Resources

About

Exploration of the Structural, Dielectric, Ferroelectric, and Piezoelectric Properties in Non-stoichiometric Sr_1−XBi_2+2X/3Nb₂O₉ Ceramics