Dielectric properties of Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 thin films fabricated by metalorganic decomposition method

Abstract

Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 (BCTZ) thin films have been proposed as a promising material for microelectronic device applications based on high dielectric materials. Perovskite polycrystalline Mg-doped BCTZ thin films were fabricated on a Pt/Ti/SiO2/Si substrate by metalorganic decomposition method. Dielectric properties were improved after a Pt/Mg-doped BCTZ thin film/Pt capacitor was post-annealed at 700 °C in O2 atmosphere for 30 min. A high dielectric constant of 460 at 1 MHz, a low dissipation factor less than 4.5%, and a low leakage current density of 4×10−7 A/cm2 at 3 V were obtained. Improved dielectric properties were discussed in conjunction with reduction of oxygen vacancies and electrons due to the post-annealing and Mg dopants.

Effects of post-annealing on the dielectric properties of Au/BaTiO3/Pt thin film capacitors

“…These results are in good agreement with the ones obtained by Pontes et al [15]. On the other hand, the results obtained by Yi et al [16] are quite different, since the oxygen post-annealing treatments in that study were done at high temperatures (700 jC), which led to the filling of oxygen vacancies, consequently enhancing the dielectric properties of the thin films.…”

“…They observed that these properties are considerably sensitive to the post-annealing treatment. Moreover, Yi et al [16] observed better dielectric properties in Mg-doped (Ba,Ca)(Ti,Zr)O 3 thin films postannealed in oxidizing atmospheres.…”

Effect of grain size on the electrical properties of (Ba,Ca)(Zr,Ti)O3 relaxor ferroelectric ceramics

“…11 Not much work has been performed on the dielectric properties and tunabilities of BCZT ceramics. The fabrication of BCZT thin films by metal-organic decomposition 12 and radio frequency magnetron sputtering, 13 and their dielectric properties and tunability have been reported recently. There are a few papers reporting on the diffuse phase-transition characteristics and effects of grain size and dc electric field on the dielectric properties of ͑Ba, Ca͒ ϫ͑Zr y Ti 1−y ͒O 3 ceramics.…”

Preparation, microstructure and dielectric properties of Ba0.5Sr0.5TiO3 thin films grown on Pt/Ti/SiO2/Si substrates by pulsed laser deposition

“…6. Comparing the results between the post-annealed sample and the as-deposited sample, we can see the dielectric relaxation is greatly improved by the post-annealing due to the fact that the postannealing process in oxygen ambient enhances the dielectric properties by reduction of oxygen vacancy concentration [15,21]. Furthermore, for the same reason, the post-annealed sample possesses much more excellent dielectric tunability, i.e., 40.6% at an electric field intensity of 278 kV/cm (not shown here).…”