Dielectric Properties of Wurtzite and Zincblende Structure Gallium Nitride

Wang, R.; Ruden, P. P.; Kolník, J.; Oguzman, I. H.; Brennan, Kevin F.

doi:10.1016/s0022-3697(96)00219-3

Cited by 46 publications

(34 citation statements)

References 26 publications

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“…This value is close to refractive index of ZnO (2.33) 24 and GaN (2.60) 25 at room temperature. Such a nanowire has been studied previously by Maslov et al 4 and Henneghien et al 5 .…”

Section: A Wide Band Gap Nanowiressupporting

confidence: 78%

Model for reflection and transmission matrices of nanowire end facets

Svendsen

Weman

Skaar

2011

Journal of Applied Physics

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Nanowires show a large potential for various electrooptical devices, such as light emitting diodes, solar cells and nanowire lasers. We present a method developed to calculate the modal reflection and transmission matrix at the end facets of a waveguide of arbitrary cross-section, resulting in a generalized version of the Fresnel equations. The reflection can be conveniently computed using Fast Fourier Transforms, once the waveguide modes are known. We demonstrate that the reflection coefficient is qualitatively described by two main parameters, the modal field confinement and the average Fresnel reflection of the plane waves constituting the waveguide mode.

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“…This value is close to refractive index of ZnO (2.33) 24 and GaN (2.60) 25 at room temperature. Such a nanowire has been studied previously by Maslov et al 4 and Henneghien et al 5 .…”

Section: A Wide Band Gap Nanowiressupporting

confidence: 78%

Model for reflection and transmission matrices of nanowire end facets

Svendsen

Weman

Skaar

2011

Journal of Applied Physics

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“…The absorption coefficient spectrum of GaN without excitonic effects is expressed in parameterized form, with the parameters determined from a fit to the absorption spectrum calculated in reference [8]. Subsequently, excitonic effects are considered for below and above bandgap absorption [9].…”

Section: Resultsmentioning

confidence: 99%

Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes

Krishnankutty

Yang

Nohava

et al. 1998

MRS Internet j. nitride semicond. res.

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“…[19] based on the full band structure of Ref. [20], as well as analytical band structures fitted to our in-house density functional theory calculations. The density functional calculations use the Heyd-Scuseria Ernzerhof (HSE) hybrid functional, which has been shown to reproduce band gaps in a good agreement with experimental values [21], [22].…”

Section: Band Structurementioning

confidence: 99%

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Kivisaari¹,

Sadi²,

Li³

et al. 2015

2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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Abstract-We carry out bipolar Monte Carlo (MC) simula tions of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recom bination and intraband scattering processes and solves self consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.

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Dielectric Properties of Wurtzite and Zincblende Structure Gallium Nitride

Cited by 46 publications

References 26 publications

Model for reflection and transmission matrices of nanowire end facets

Model for reflection and transmission matrices of nanowire end facets

Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

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