Dielectric Relaxation and Charge Transfer in Amorphous MoS<sub>2</sub> Thin Films

Кононов, А. А.; Castro, R. A.; Glavnaya, Diana D.; Анисимова, Н. И.; Bordovsky, G. A.; Kolobov, Alexander V.; Saito, Yuta; Fons, Paul

doi:10.1002/pssb.202000114

Cited by 5 publications

(3 citation statements)

References 16 publications

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“…The characteristic relaxation time for the β-relaxation peak in the synthesized polymeric sheet has been defined as the reciprocal frequency of the peak maximum (

) where

is the peak frequency of the

. The relaxation process in the synthesized polymeric sheets networks can be determined via the Arrhenius equation [ 37 , 38 ]:

where

, and

is the Boltzmann constant. The transition probabilities between consecutive minimum energy configurations of the dipoles (minima of the potential valleys) are related with the activation energy

.…”

Section: Resultsmentioning

confidence: 99%

Impact of Charge Transfer Complex on the Dielectric Relaxation Processes in Poly(methyl methacrylate) Polymer

et al. 2022

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The impact of the charge transfer complex on the dielectric relaxation processes in free poly(methyl methacrylate) (PMMA) polymer sheets was investigated. The frequency dependence of dielectric properties was obtained over the frequency range 0.1 Hz–1 MHz at temperatures ranging between 303 K and 373 K for perylene dye and acceptors (picric acid (PA) and chloranilic acid (CLA)) in an in situ PMMA polymer. The TG/dTG technique was used to investigate the thermal degradation of the synthesized polymeric sheets. Additionally, the kinetic parameters have been assessed using the Coats–Redfern relation. The dielectric relaxation spectroscopy of the synthesized polymeric sheets was analyzed in terms of complex dielectric constant, dielectric loss, electrical modulus, electrical conductivity, and Cole–Cole impedance spectroscopy. α- and β-relaxation processes were detected and discussed. The σ(ω) dispersion curves of the synthesized polymeric sheets show two distinct regions with increasing frequency. The impedance data of the synthesized polymeric sheets can be represented by the equivalent circuit (parallel RC).

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“…The characteristic relaxation time for the β-relaxation peak in the synthesized polymeric sheet has been defined as the reciprocal frequency of the peak maximum (

) where

is the peak frequency of the

. The relaxation process in the synthesized polymeric sheets networks can be determined via the Arrhenius equation [ 37 , 38 ]:

where

, and

is the Boltzmann constant. The transition probabilities between consecutive minimum energy configurations of the dipoles (minima of the potential valleys) are related with the activation energy

.…”

Section: Resultsmentioning

confidence: 99%

Impact of Charge Transfer Complex on the Dielectric Relaxation Processes in Poly(methyl methacrylate) Polymer

et al. 2022

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“…The frequency dependences of the conductivity of the layers under study at different temperatures were obtained with Novocontrol Technologies "Concept-81" spectrometer (Novocontrol Technologies GmbH & Co. KG, Montabaur, Germany; "Modern physical and chemical methods of formation and study of materials for the needs of industry, science and education", Herzen University). This spectrometer was designed to study the electrophysical properties of a wide class of materials [22][23][24]. The measurements were carried out in the frequency range f = 10 −2 .…”

Section: Methodsmentioning

confidence: 99%

High-Frequency Conductivity of Amorphous and Crystalline Sb2Te3 Thin Films

2023

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The results of study of charge transfer processes in thin amorphous and crystalline Sb2Te3 films in a wide range of frequencies and temperatures are presented. The frequency spectra of conductivity were obtained by the dielectric spectroscopy method. The authors analyzed the frequency dependences of the conductivity in the electric field and the temperature dependences of the exponent s. A transition from the classical correlated barrier hopping (СВН) to quantum mechanical tunneling (QMT) was observed at a certain temperature Tt. The СВН model allowed the authors to calculate the conductivity parameters of two phases. Two areas with different types of conductivity were revealed on the conduction spectra, and the activation energies of charge transfer processes for amorphous and crystalline films were determined. The following features were discovered: the difference in the temperatures of the change of the charge transfer mechanism and the transition from the semiconductor region to the metal region on the temperature dependence of conductivity. They can help to identify the amorphous phase in the quasi-binary chalcogenide Sb2Te3-GeTe system.

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“…One of the sensitive and informative methods for studying such complex low-dimensional systems is impedance spectroscopy in a wide frequency range [ 38 , 39 , 40 , 41 , 42 , 43 ]. Especially important for the study of electronic processes, possible migration of ions, etc., is impedance spectroscopy at low frequencies in the presence of a constant component of the electric field.…”

Section: Introductionmentioning

confidence: 99%

Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer

et al. 2021

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The spectra of dielectric relaxation of macroporous silicon with a mesoporous skin layer in the frequency range 1–106 Hz during cooling (up to 293–173 K) and heating (293–333 K) are presented. Macroporous silicon (pore diameter ≈ 2.2–2.7 μm) with a meso-macroporous skin layer was obtained by the method of electrochemical anodic dissolution of monocrystalline silicon in a Unno-Imai cell. A mesoporous skin layer with a thickness of about 100–200 nm in the form of cone-shaped nanostructures with pore diameters near 13–25 nm and sizes of skeletal part about 35–40 nm by ion-electron microscopy was observed. The temperature dependence of the relaxation of the most probable relaxation time is characterized by two linear sections with different slope values; the change in the slope character is observed at T ≈ 250 K. The features of the distribution of relaxation times in meso-macroporous silicon at temperatures of 223, 273, and 293 K are revealed. The Havriliak-Negami approach was used for approximation of the relaxation curves ε″ = f(ν). The existence of a symmetric distribution of relaxers for all temperatures was found (Cole-Cole model). A discussion of results is provided, taking into account the structure of the studied object.

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Dielectric Relaxation and Charge Transfer in Amorphous MoS₂ Thin Films

Cited by 5 publications

References 16 publications

Impact of Charge Transfer Complex on the Dielectric Relaxation Processes in Poly(methyl methacrylate) Polymer

Impact of Charge Transfer Complex on the Dielectric Relaxation Processes in Poly(methyl methacrylate) Polymer

High-Frequency Conductivity of Amorphous and Crystalline Sb2Te3 Thin Films

Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer

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Dielectric Relaxation and Charge Transfer in Amorphous MoS2 Thin Films

Cited by 5 publications

References 16 publications

Impact of Charge Transfer Complex on the Dielectric Relaxation Processes in Poly(methyl methacrylate) Polymer

Impact of Charge Transfer Complex on the Dielectric Relaxation Processes in Poly(methyl methacrylate) Polymer

High-Frequency Conductivity of Amorphous and Crystalline Sb2Te3 Thin Films

Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer

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Product

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About

Dielectric Relaxation and Charge Transfer in Amorphous MoS₂ Thin Films