2019
DOI: 10.1111/jace.16849
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Dielectric relaxation and local domain structures of ferroelectric PIMNT and PMNT single crystals

Abstract: Dielectric relaxation properties of ternary Pb(In1/2Nb1/2)O3‐0.49Pb(Mg1/3Nb2/3)O3‐0.27PbTiO3 (PIMNT27) and binary Pb(Mg1/3Nb2/3)O3‐0.27PbTiO3 (PMNT27) single crystals have been investigated. The dielectric constant peak temperature Tm with frequency obeys the Vogel‐Fulcher (V‐F) law. The dielectric constants at temperatures above Tm can be described by the Lorenz‐type relationship. The fitting parameter δA and ΔTm of PIMNT27 are higher than those of PMNT27, indicating stronger relaxation in ternary PIMNT syste… Show more

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Cited by 8 publications
(5 citation statements)
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“…The inset in Figure 2a demonstrates a well-fitted T m -f relation for the prepared sample using the V-F law. The fitting result gives a T f value of 466.3 K, which is not only higher than that (T f ~387 K) observed in the R-phase PMN-27PT single crystal but also higher than the T f value (T f ~432 K) obtained for the PIN-PMN-27PT single crystal with a lower PT composition [39]. It suggests that augmenting the composition of PbTiO 3 in the PIN-PMN-PT can enhance the static freezing temperature of the polarization fluctuation.…”
Section: Resultscontrasting
confidence: 49%
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“…The inset in Figure 2a demonstrates a well-fitted T m -f relation for the prepared sample using the V-F law. The fitting result gives a T f value of 466.3 K, which is not only higher than that (T f ~387 K) observed in the R-phase PMN-27PT single crystal but also higher than the T f value (T f ~432 K) obtained for the PIN-PMN-27PT single crystal with a lower PT composition [39]. It suggests that augmenting the composition of PbTiO 3 in the PIN-PMN-PT can enhance the static freezing temperature of the polarization fluctuation.…”
Section: Resultscontrasting
confidence: 49%
“…This lack of observable changes might be attributed to one of two reasons: (i) the electric driving force generated by the 3 V tip bias is insufficient to surmount the requisite energy barrier for domain switching, hence leading to the absence of domain switching, or (ii) the geometrical dimension induced by the 3 V tip bias is smaller than the critical dimension required for domain nucleation, causing the nucleated domains to switch back to their original state. According to the report on the domain structure and its dynamical behavior of the [001] C -oriented PIN-49PMN-27PT single crystals with R-phase, we found that some new domains formed when a small tip bias of 0.5 V was applied to the sample [39]. The results indicate that the PIN-PMN-33PT single crystals show better electric field stability than the PIN-PMN-27PT single crystals at the nanoscale, and this is consistent with the result that the former has a higher E c [39].…”
Section: Resultsmentioning
confidence: 86%
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“…To quantify the frequency dispersion behavior, the maximum temperature of ε max ( T m ) around 473 K with Δ T m ≈ 10 K over frequency range of 10 2 to 10 6 Hz is fitted by the Vögel-Fulcher law , , where the activation energy U a of 33.5 meV and the static freezing temperature T f of about 467 K are achieved. It implies that the monoclinic PIN-PMN-PT holds the enhanced relaxation and predicts a strong PNR interaction. , …”
Section: Resultsmentioning
confidence: 95%
“…It implies that the monoclinic PIN-PMN-PT holds the enhanced relaxation and predicts a strong PNR interaction. 36,37 To explore the heterophase structure, internal energy, and temperature stability, we employ the unpolarized and polarized Raman spectroscopy in the cross-polarized VH: z ̅ (x,y)z and parallel-polarized VV: z ̅ (x,x)z geometries. Room temperature Raman spectra were shown in Figure S1(a) (see the Supporting Information, SI).…”
Section: ■ Results and Discussionmentioning
confidence: 99%