In the past decade, domain engineered relaxor-PT ferroelectric single crystals, including (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT), (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZN-PT) and (1-x-y)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3 (PIN-PMN-PT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr1-xTixO3 (PZT) ceramics, the piezoelectric coefficient d33 is increased by a factor of 5 and the electromechanical coupling factor k33 is increased from < 70% to > 90%. Many emerging rich physical phenomena, such as charged domain walls, multi-phase coexistence, domain pattern symmetries, etc., have posed challenging fundamental questions for scientists. The superior electromechanical properties of these domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN-PT single crystals to the commercial production of the high-end ultrasonic imaging probe “PureWave”. The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN-PMN-PT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery, crystal growth techniques, domain engineering concept, and full-matrix property characterization all the way to device innovations. It outlines a truly encouraging story in materials science in the modern era. All key references are provided and 30 complete sets of material parameters for different types of relaxor-PT single crystals are listed in the Appendix. It is the intension of this review article to serve as a resource for those who are interested in basic research and practical applications of these relaxor-PT single crystals. In addition, possible mechanisms of giant piezoelectric properties in these domain-engineered relaxor-PT systems will be discussed based on contributions from polarization rotation and charged domain walls.

Recent discovery of piezoelectricity existed in two-dimensional (2D) layered materials represents a key milestone for flexible electronics, miniaturized and wearable devices. However, the so far reported piezoelectricity in these 2D layered materials is too weak to be used for any practical applications. In this work, we discovered that grain boundaries (GBs) in monolayer MoS 2 can significantly enhance its piezoelectric property. The output power of piezoelectric devices made of the butterflyshaped monolayer MoS 2 was improved about 50% by the GB induced piezoelectric effect. The enhanced piezoelectricity is attributed to the additional piezoelectric effect induced by the existence of deformable GBs which can promote polarization and generates spontaneous polarization with different piezoelectric coefficients along with various directions. We further made a flexible piezoelectric device based on the 2D MoS 2 with the GBs and demonstrated its potential application in self-powered precision sensors for in-situ detecting pressure changes in human blood for the health monitoring.

Ternary single crystals xPb(In(12)Nb(12))O(3)-(1-x-y)Pb(Mg(13)Nb(23))O(3)-yPbTiO(3) (PIN-PMN-PT) poled along [011](c) showed remarkable electromechanical properties. We report complete sets of elastic, dielectric, and piezoelectric constants of PIN-PMN-28%PT and PIN-PMN-32%PT, measured by using combined resonance and ultrasonic methods. The electromechanical coupling coefficients k(15), k(32), and k(33) can reach 0.95, 0.90, and 0.92, and the piezoelectric strain coefficients d(15), d(32), and d(33) are as high as 3354 pCN, -1781 pCN, and 1363 pCN, respectively. These full matrix data sets provide the base for fundamental studies on domain engineering phenomena as well as urgently needed input data for the design of electromechanical devices using [011](c) poled PIN-PMN-PT single crystals.

High-performance piezoelectrics are pivotal to various electronic applications including multilayer actuators, sensors, and energy harvesters. Despite the presence of high Lotgering factor F 001 , two key limitations to today's relaxor-PbTiO 3 textured ceramics are low piezoelectric properties relative to single crystals and high texture temperature. In this work, Pb(Yb 1/2 Nb 1/2 )O 3 -Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PYN-PMN-PT) textured ceramics with F 001 ∼ 99% were synthesized at only 975 °C through liquid-phase-assisted templated grain growth, where of particular significance is that single-crystal properties, i.e., very large electrostrain S max /E max ∼ 1830 pm V −1 , giant piezoelectric figure of merit d 33 × g 33 ∼ 61.3 × 10 −12 m 2 N −1 , high electromechanical coupling k 33 ∼ 0.90, and Curie temperature T c ∼ 205 °C, were simultaneously achieved. Especially, the S max /E max and d 33 × g 33 values correspond to ∼180% enhancement as compared to the regularly 1200 °C-textured ceramics with F 001 ∼ 96%, representing the highest values ever reported on piezoceramics. Phase-field simulation revealed that grain misorientation has a stronger influence on piezoelectricity than texture fraction. The ultrahigh piezoelectric response achieved here is mainly attributed to effective control of grain orientation features and domain miniaturization. This work provides important guidelines for developing novel ceramics with significantly enhanced functional properties and low synthesis temperature in the future and can also greatly expand application fields of piezoceramics to high-performance, miniaturized electronic devices with multilayer structures.