Elastic, dielectric, and piezoelectric constants of Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 single crystal poled along [011]c

Abstract

Ternary single crystals xPb(In(12)Nb(12))O(3)-(1-x-y)Pb(Mg(13)Nb(23))O(3)-yPbTiO(3) (PIN-PMN-PT) poled along [011](c) showed remarkable electromechanical properties. We report complete sets of elastic, dielectric, and piezoelectric constants of PIN-PMN-28%PT and PIN-PMN-32%PT, measured by using combined resonance and ultrasonic methods. The electromechanical coupling coefficients k(15), k(32), and k(33) can reach 0.95, 0.90, and 0.92, and the piezoelectric strain coefficients d(15), d(32), and d(33) are as high as 3354 pCN, -1781 pCN, and 1363 pCN, respectively. These full matrix data sets provide the base for fundamental studies on domain engineering phenomena as well as urgently needed input data for the design of electromechanical devices using [011](c) poled PIN-PMN-PT single crystals.

Phase transition behaviors in relaxor ferroelectric [001]-poled Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals studied by Brillouin light scattering and dielectric spectroscopies

“…Recently, various properties of PIN-PMN-PT single crystals near MPB including elastic, dielectric, and piezoelectric properties have been studied under different poling conditions. [9][10][11][12][13][14][15][16][17][18][19][20][21] However, the ferroelectric phase transition behaviors of PIN-PMN-PT single crystals have not been studied in detail. A great portion of the published data on this system are reported on poled samples at room temperatures, and studies on the phase transition behaviors in the temperature window of as-grown or unpoled samples in comparison with poled ones are scarce.…”

Influence of manganese doping to the full tensor properties of 0.24Pb(In1/2Nb1/2)O3-0.47Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 single crystals

“…Each sample was cut and polished into a parallelepiped with the orientations of data sets. 13,14 The dimensions and geometries of samples in resonance measurements were specified by the IEEE standards on piezoelectricity. 15 The resonance and anti-resonance frequencies were obtained by a HP 4194 A impedance-phase gain analyzer.…”

Voltage control of magnetism in FeGaB/PIN-PMN-PT multiferroic heterostructures for high-power and high-temperature applications

“…PIN-PMN-PT single crystals have much higher dielectric breakdown strength than those binary piezoelectric crystals due to the large coercive field ($6 kV/cm), while maintaining the excellent piezoelectric properties with higher temperature operational range with T RT > 120 C. [19][20][21][22] Besides, (Fe 80 Ga 20 ) 88 B 12 films are wellknown magnetostrictive materials with a high piezomagnetic coefficient of 7 ppm/Oe at low saturation field of $30 Oe. The FeGaB films also exhibit narrow FMR linewidth of <20 Oe at X-band ($9.5 GHz), which is advantageous in RF device application comparing to other metallic ferromagnetic thin films.…”