Voltage control of magnetism in FeGaB/PIN-PMN-PT multiferroic heterostructures for high-power and high-temperature applications

Hu, Zhongqiang; Nan, Tianxiang; Wang, Xinjun; Staruch, Margo; Gao, Yuan; Finkel, Peter; Sun, Nian X.

doi:10.1063/1.4905855

Cited by 46 publications

(17 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is consistent with the hysteresis loops suggesting that [0 1 1] is a hard axis in the present films. The observed change in magnetization corresponds to a α CME of 1.23 ± 0.15 × 10 −6 s/m, which is among the highest values of CME coupling reported thus far5313233. It should be noted that this value of the coupling coefficient is determined far from mechanical resonance that would be expected to inflate this value, and does not rely on 180° ferroelectric polarization switching that is expected to fatigue the sample and provide a nonlinear magnetization response.…”

Section: Resultsmentioning

confidence: 65%

Reversible strain control of magnetic anisotropy in magnetoelectric heterostructures at room temperature

Staruch

Gopman

Iunin

et al. 2016

Sci Rep

Self Cite

View full text Add to dashboard Cite

The ability to tune both magnetic and electric properties in magnetoelectric (ME) composite heterostructures is crucial for multiple transduction applications including energy harvesting or magnetic field sensing, or other transduction devices. While large ME coupling achieved through interfacial strain-induced rotation of magnetic anisotropy in magnetostrictive/piezoelectric multiferroic heterostructures has been demonstrated, there are presently certain restrictions for achieving a full control of magnetism in an extensive operational dynamic range, limiting practical realization of this effect. Here, we demonstrate the possibility of generating substantial reversible anisotropy changes through induced interfacial strains driven by applied electric fields in magnetostrictive thin films deposited on (0 1 1)-oriented domain-engineered ternary relaxor ferroelectric single crystals with extended temperature and voltage ranges as compared to binary relaxors. We show, through a combination of angular magnetization and magneto-optical domain imaging measurements, that a 90° in-plane rotation of the magnetic anisotropy and propagation of magnetic domains with low applied electric fields under zero electric field bias are realized. To our knowledge, the present value attained for converse magnetoelectric coupling coefficient is the highest achieved in the linear piezoelectric regime and expected to be stable for a wide temperature range, thus representing a step towards practical ME transduction devices.

show abstract

Section: Resultsmentioning

confidence: 65%

Reversible strain control of magnetic anisotropy in magnetoelectric heterostructures at room temperature

Staruch

Gopman

Iunin

et al. 2016

Sci Rep

Self Cite

View full text Add to dashboard Cite

show abstract

“…A voltage applied to a ferroelectric substrate generates strains that can mechanically couple to a ferromagnetic element and modify its magnetic anisotropy5. Previous studies have explored strain-induced changes in magnetic anisotropy energy and domain wall propagation in hybrid piezoelectric/ferromagnetic heterostructures, for both in-plane and perpendicularly magnetized ferromagnetic thin films either by direct deposition678910 of the magnetic film onto the piezoelectric element or by indirect bonding1112 of the piezoelectric element onto a magnetic film on substrate. Among the materials showing PMA, Co/Pd, Co/Pt and CoFeB have been explored previously, largely due to their promise for high density magnetic recording and MRAM.…”

mentioning

confidence: 99%

Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy

Gopman¹,

Dennis

Chen

et al. 2016

Sci Rep

View full text Add to dashboard Cite

Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr0.52Ti0.48)O3] substrate plates. Electric fields up to ±2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive field by over 30%. We also demonstrate that alternating in-plane tensile and compressive strains (less than 0.01%) can be used to propagate magnetic domain walls. This ability to manipulate high anisotropy magnetic thin films could prove useful for lowering the switching energy for magnetic elements in future voltage-controlled spintronic devices.

show abstract

“…For example, Sun et al demonstrated the magnetic properties of FeGa films by the additional B content to improve the soft magnetism of FeGa film, 22,23 and also studied the magnetic properties of FeGaB/ multiferroic films. 24,25 These results show the tunable microwave magnetic properties. However, as a consequence, the microwave magnetic properties and damping for pure FeGa film and the investigations of the influence of nitrogen element on the high frequency magnetic properties of FeGa films are also absent, which need to be discussed and supplied.…”

Section: Introductionsmentioning

confidence: 64%

Tuning high frequency magnetic properties and damping of FeGa, FeGaN and FeGaB thin films

et al. 2017

View full text Add to dashboard Cite

A series of FeGa, FeGaN and FeGaB films with varied oblique angles were deposited by sputtering method on silicon substrates, respectively. The microstructure, soft magnetism, microwave properties, and damping factor for the films were investigated. The FeGa films showed a poor high frequency magnetic property due to the large stress itself. The grain size of FeGa films was reduced by the additional N element, while the structure of FeGa films was changed from the polycrystalline to amorphous phase by the involved B element. As a result, N content can effectively improve the magnetic softness of FeGa film, but their high frequency magnetic properties were still poor both when the N2/Ar flow rate ratio is 2% and 5% during the deposition. The additional B content significantly led to the excellent magnetic softness and the self-biased ferromagnetic resonance frequency of 1.83 GHz for FeGaB film. The dampings of FeGa films were adjusted by the additional N and B contents from 0.218 to 0.139 and 0.023, respectively. The combination of these properties for FeGa films are helpful for the development of magnetostrictive microwave devices.

show abstract

Voltage control of magnetism in FeGaB/PIN-PMN-PT multiferroic heterostructures for high-power and high-temperature applications

Cited by 46 publications

References 30 publications

Reversible strain control of magnetic anisotropy in magnetoelectric heterostructures at room temperature

Reversible strain control of magnetic anisotropy in magnetoelectric heterostructures at room temperature

Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy

Tuning high frequency magnetic properties and damping of FeGa, FeGaN and FeGaB thin films

Contact Info

Product

Resources

About