Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient

Werner, M.; Taylor, Stephen; Chalker, Paul R.; Jones, Anthony; Zhao, Chun

doi:10.1007/s11671-010-9782-z

Cited by 21 publications

(18 citation statements)

References 52 publications

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“…After annealing, the doping level affected the phase of the thin film crystallization and the size of the crystal grains formed that cause the dielectric relaxation. For a La concentration of x = 0.35 dielectric thin films with the 900 °C N 2 -annealed containing ~15 nm crystals did not suffer from severe dielectric relaxation and a similar effect appeared to occur with the 900 °C air annealed, producing ~4 nm diameter equiaxed nanocrystallites within the thin film, which suffered from severe dielectric relaxation [87]. So, the cause of the dielectric relaxation is believed to be related to the size of the crystal grains formed during annealing and doping affects the size of the crystal grains formed.…”

Section: Resultsmentioning

confidence: 99%

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

et al. 2012

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In capacitance-voltage (C-V) measurements, frequency dispersion in high-k dielectrics is often observed. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion, could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the high-k thin film and silicon substrate) and the parasitic effects. The effect of the lossy interfacial layer on frequency dispersion was investigated and modeled based on a dual frequency technique. The significance of parasitic effects (including series resistance and the back metal contact of the metal-oxide-semiconductor (MOS) capacitor) on frequency dispersion was also studied. The effect of surface roughness on frequency dispersion is also discussed. After taking extrinsic frequency dispersion into account, the relaxation behavior can be modeled using the Curie-von Schweidler (CS) law, the Kohlrausch-Williams-Watts (KWW) relationship and the Havriliak-Negami (HN) relationship. Dielectric relaxation mechanisms are also discussed.

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Section: Resultsmentioning

confidence: 99%

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

et al. 2012

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“…In contrast to the as-deposited high- k thin films, the annealed samples show a pronounced accumulation capacitance reduction, which is mainly due to the increased interfacial layer (IL). One kind of high- k materials were researched by our group before: La-doped ZrO 2 films, with a thickness of 35 nm deposited on n -type Si(100) substrates by liquid injection ALD at 300°C [14]. The 35-nm-thick La 0.35 Zr 0.65 O 2 layers retained their thickness after PDA, but the IL (SiO x ) increased from 1.5 nm on the as-deposited samples to 4.5 nm after PDA at 900°C in N 2 , respectively, which is attributed to either an internal or external oxidation mechanism.…”

Section: Resultsmentioning

confidence: 99%

“…CeO 2 readily crystallizes in the fluorite form, but control over the grain size formed is important due to the effect of grain boundary density on properties like ionic conductivity and dielectric response [12]. Moreover, the intrinsic frequency dispersion (dielectric relaxation) studies [13,14] have also been found to be relevant to grain size of the samples, especially those dealing with nanostructured materials.…”

Section: Introductionmentioning

confidence: 99%

Grain size dependence of dielectric relaxation in cerium oxide as high-k layer

Zhao

Werner

et al. 2013

Nanoscale Res Lett

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Cerium oxide (CeO2) thin films used liquid injection atomic layer deposition (ALD) for deposition and ALD procedures were run at substrate temperatures of 150°C, 200°C, 250°C, 300°C, and 350°C, respectively. CeO2 were grown on n-Si(100) wafers. Variations in the grain sizes of the samples are governed by the deposition temperature and have been estimated using Scherrer analysis of the X-ray diffraction patterns. The changing grain size correlates with the changes seen in the Raman spectrum. Strong frequency dispersion is found in the capacitance-voltage measurement. Normalized dielectric constant measurement is quantitatively utilized to characterize the dielectric constant variation. The relationship extracted between grain size and dielectric relaxation for CeO2 suggests that tuning properties for improved frequency dispersion can be achieved by controlling the grain size, hence the strain at the nanoscale dimensions.

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“…As mentioned later, of the high‐ k materials studied in this work, zirconium oxide (ZrO 2 ) was selected because of its relatively high dielectric constant (25–40) and superior thermal stability at high temperature (∼1000 °C) . Furthermore, to enhance the dielectric constant and stabilize the phase of ZrO 2 , niobium (Nb) doped ZrO 2 was used Nb‐doped ZrO 2 (NZO) films were prepared using a chemical solution process.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of MoS₂ thin films on oxide‐dielectric‐covered substrates by chemical solution process

Kim

Higashimine

Haga

et al. 2016

Physica Status Solidi (b)

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The chemical solution process of MoS2 on high‐k oxide films has been systematically investigated. The source solution used in this work is made of (NH4)2MoS4 powder dissolved in N‐methyl‐2‐pyrrolidone. We have spin‐coated the solution on various kinds of dielectric oxide films and shown that the coating properties strongly depend on the kind of dielectric, which can be understood by surface energy analysis, following this, the growth of high quality of MoS2 film is confirmed by Raman scattering spectroscopy and X‐ray diffraction. It is demonstrated that the MoS2 film can be grown on Nb doped ZrO2 using a solution with a two‐step annealing process, where the first annealing is performed at 450 °C in H2/Ar (5:95) atmosphere for 20 min and the second annealing at 1000 °C in Ar atmosphere with S vapor for 20 min. In addition, conformal growth of a MoS2 layered structure on the curved surface of the oxide film is confirmed by transmission electron microscope observations. A further conclusion is that the thickness of MoS2 can be controlled by the concentration of a source solution and that two‐layer MoS2 is obtained when the concentration of source solution is 0.00625 mol kg−1. The measured Hall mobility of the solution‐derived MoS2 film, annealed at 1000 °C is approximately 25 cm2 V−1s−1.

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Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient

Cited by 21 publications

References 52 publications

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

Grain size dependence of dielectric relaxation in cerium oxide as high-k layer

Fabrication of MoS₂ thin films on oxide‐dielectric‐covered substrates by chemical solution process

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Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient

Cited by 21 publications

References 52 publications

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

Grain size dependence of dielectric relaxation in cerium oxide as high-k layer

Fabrication of MoS2 thin films on oxide‐dielectric‐covered substrates by chemical solution process

Contact Info

Product

Resources

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Fabrication of MoS₂ thin films on oxide‐dielectric‐covered substrates by chemical solution process